Diodes ZXTN2005Z User Manual
ZXTN2005Z
25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY
= 25V : R
BV
CEO
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 25V NPN transistor
offers extremelylow on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
Extremely low equivalent on-resistance; R
•
5.5 amps continuous current
•
Up to 20 amps peak current
•
Very low saturation voltages
•
Excellent hFEcharacteristics up to 20 amps
•
= 25m ; IC= 5.5A
SAT
= 25m at 6.5A
SAT
9
8
T
O
S
APPLICATIONS
•
Emergency lighting circuits
•
Motor driving (including DC fans)
•
Solenoid, relay and actuator drivers
•
DC modules
•
Backlight Inverters
ORDERING INFORMATION
DEVICE REEL
ZXTN2005ZTA
TAPE WIDTH
SIZE
7" 12mm
embossed
DEVICE MARKING
869
ISSUE 2 - JUNE 2005
PINOUT
QUANTITY PER
REEL
1,000 units
TOP VIEW
1
SEMICONDUCTORS
ZXTN2005Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
Collector-emitter voltage BV
Emitter-base voltage BV
Continuous collector current
(a)
Peak pulse current I
(a)
Power dissipation at T
=25°C
A
CBO
CEO
EBO
I
C
CM
P
D
Linear derating factor
Power dissipation at TA=25°C
(b)
P
D
Linear derating factor
Operating and storage temperature range T
j,Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Junction to ambient
Junction to ambient
(a)
(b)
R
JA
R
JA
60 V
25 V
7V
5.5 A
20 A
1.5
12
mW/°C
2.1
16.8
mW/°C
-55 to +150 °C
83 °C/W
60 °C/W
W
W
NOTES:
(a)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b)For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 2 - JUNE 2005
SEMICONDUCTORS
2
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