Diodes ZXTN19055DZ User Manual
ZXTN19055DZ
55V, SOT89, NPN medium power transistor
Summary
BV
> 150V
CEX
BV
> 55V
CEO
I
= 6A
C(cont)
V
R
P
D
< 60mV @ 1A
CE(sat)
= 28m⍀
CE(sat)
= 2.1W
Description
Packaged in the SOT89 outline this low saturation 55V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
Feature
• Extremely low equivalent on-resistance of 28m⍀
• 6 Amps continuous current
• Up to 10 amps peak current
• Very low saturation voltages
• Excellent h
• 150V Forward blocking voltage
characteristics up to 10 amps
FE
Applications
• Emergency lighting circuits
• Motor driving (including DC fans)
• Solenoid, relay and actuator drivers
• DC modules
B
C
Pinout - top view
C
E
E
C
B
• Backlight inverters
Ordering information
Device Reel size
(inches)
ZXTN19055DZTA 7 12 1000
Tape width
(mm)
Quantity per reel
Device marking
S75
Issue 1 - June 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
ZXTN19055DZ
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-base voltage V
Collector-emitter voltage (forward blocking voltage) V
Collector-emitter voltage (base open) V
Emitter-base voltage V
Continuous collector current
(b)
Peak pulse current I
Power dissipation at T
amb
=25°C
(a)
CBO
CEX
CEO
EBO
I
C
CM
P
D
Linear derating factor 12 mW/°C
Power dissipation at T
amb
=25°C
(b)
P
D
Linear derating factor 16.8 mW/°C
Operating and storage temperature range T
j
, T
stg
150 V
150 V
55 V
7V
6A
10 A
1.5 W
2.1 W
-55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
Junction to ambient
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(a)
(b)
R
R
⍜JA
⍜JA
83 °C/W
59 °C/W
Issue 1 - June 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
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