Diodes ZXTN07045EFF User Manual

A

f

45V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23F

Features and Benefits

• BV

• I

• Low Saturation Voltage V

• R

• h

• High h

• 1.5W power dissipation

• Complementary part number ZXTP07040DFF

• Totally Lead-Free & Fully RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

> 45V

CEO

= 4A Continuous Collector Current

C

= 50mΩ

CE(sat)

characterised up to 4A

FE

min 400 @ 1A

FE

< 80mV @ 1A

CE(sat)

Description

This low voltage NPN transistor has been designed for applications
requiring high gain and very low saturation voltage. The SOT23F
package is pin compatible with the industry standard SOT23 footprint
but offers lower profile and higher dissipation for applications where
power density is of utmost importance.

SOT23F

B

Top View

Device symbol

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ZXTN07045EFF

Mechanical Data

• Case: SOT23F

• Case material: Molded Plastic. “Green” Molding Compound

(Note 2) UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish; Solderable per MIL-STD-202,

Method 208

• Weight: 0.008 grams (Approximate)

Applications

• Boost converters

• MOSFET and IGBT gate drivers

• Lamp and relay driver

• Motor drive

• Siren driver

C

E

C

E

Top View

Pin Configuration

B

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTN07045EFFTA 1D4 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

3. For packaging details, go to our website at http://www.diodes.com.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

ZXTN07045EFF

Document number: DS33674 Rev. 4 - 2

1D4

1D4 = Product Type Marking Code

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Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse Blocking)
Emitter-Base Voltage
Continuous Collector Current (Note 6)
Peak Pulse Current
Base Current

V

CBO

V

CEO

V

ECO

V

EBO

I

C

I

CM

I

B

45 V
45 V

6 V
7 V
4 A
6 A
1 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

0.84

6.72

1.34

10.72

1.50

12.0

2.0

16.0
149

W

mW/°C

°C/W

Power Dissipation
Linear Derating Factor

Thermal Resistance, Junction to Ambient

(Note 4)

(Note 5)
(Note 6)

P

D

-

(Note 7)

(Note 4)
(Note 5) 93
(Note 6) 83

R

θJA

(Note 7) 60
Thermal Resistance, Junction to Lead (Note 8)
Operating and Storage Temperature Range

Notes: 4. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

5. For a device surface mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

6. For a device surface mounted on 50mm X 50mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

7. As note 6 above, measured at t < 5 seconds

8. Thermal resistance from junction to solder-point (at the end of the collector lead).

R

T

J, TSTG

θJL

43.77

-55 to +150

°C/W

°C

ZXTN07045EFF

Document number: DS33674 Rev. 4 - 2

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Typical Thermal Characteristics

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ZXTN07045EFF

V

10

CE(sat)

Limited

1

DC

100m

Collector Current (A)

C

I

10m

100m 1 10

1s

Single Pulse

T

=25°C

amb

50mmX50mm FR4, 2oz Cu

100ms

10ms

1ms

100µs

VCE Collector-Emitter Voltage (V)

Safe Operating Area

80

60

40

20

100µ 1m 10m 100m 1 10 100 1k

Thermal Resista nce (° C/ W)

T

=25°C

amb

50mmX 50mm FR 4,

2oz Cu

D=0.5

D=0.2

0

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

Max Power Dissipation (W)

15mmX15mm
FR4, 1oz Cu)

0 20 40 60 80 100 120 140 160

Temperature (°C)

50mmX50mm FR4, 2oz Cu)

25mmX25mm
FR4, 2oz Cu)

Derating Curve

100

10

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Single Pulse

T

=25°C

amb

50mmX50mm FR4,

2oz Cu

Transient Thermal Imp ed an ce

ZXTN07045EFF

Document number: DS33674 Rev. 4 - 2

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Pulse Power Dissipation

February 2012

© Diodes Incorporated