Diodes ZXTN04120HK User Manual

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120V NPN MEDIUM POWER DARLINGTON TRANSISTOR IN TO252

Features

 BV

 BV

 I

 hFE > 2k for High Gain @ 1A
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

> 120V

CEO

> 140V

CBO

= 1.5A High Continuous current

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TO252 (DPAK)

Top View Top View

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Mechanical Data

 Case: TO252 (DPAK)
 Case Material: Molded Plastic, "Green" Molding Compound.

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish - Matte Tin Plated Leads; Solderable

 Weight: 0.34 grams (approximate)

Applications

 DC Fans
 Regulator Transistors
 Relays
 Solenoid Driving

Equivalent Circuit

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Diodes Incorporated

ZXTN04120HK

UL Flammability Classification Rating 94V-0

per MIL-STD-202, Method 208

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BE

E

Pin-Out

Ordering Information (Note 4)

Product Package Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTN04120HKTC TO252 (DPAK) ZXTN04120H 13 16 2,500

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

ZXTN04120HK

Document number: DS36554 Rev. 3 - 2

ZXTN

04120H

YYWW

www.diodes.com

ZXTN04120H = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year, (ex: 13 = 2013)
WW = Week Code 01 - 52

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January 2014

© Diodes Incorporated

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ZXTN04120HK

Absolute Maximum Ratings (@T

= +25°C, unless otherwise specified.)

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Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

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Characteristic Symbol Value Unit

(Note 5)

Power Dissipation

(Note 6) 2
(Note 7) 1.5
(Note 5)

Thermal Resistance, Junction to Ambient Air

(Note 6) 62.5

(Note 7) 80
Thermal Resistance, Junction to Leads (Note 8)
Thermal Resistance, Junction to Case (Note 9)
Operating and Storage Temperature Range

ESD Ratings (Note 10)

V

CBO

V

CEO

V

EBO

I

C

I

CM

140 V
120 V

14 V

1.5 A
4 A

3.9

P

D

W

32

R

θJA

°C/W

R

θJL

R

θJC

T

, T

J

STG

9

11

-55 to +150 °C

Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Machine Model ESD MM 400 V C

Notes: 5. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured

7. Same as note (5), except mounted on minimum recommended pad (MRP) layout.

under still air conditions whilst operating in a steady-state.

6. Same as note (5), except mounted on 25mm x 25mm 1oz copper.

8. Thermal resistance from junction to solder-point (on the exposed collector pad).

9. Thermal resistance from junction to the top of the case.

10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

ZXTN04120HK

Document number: DS36554 Rev. 3 - 2

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January 2014

© Diodes Incorporated

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Thermal Characteristics and Derating Information

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Diodes Incorporated

ZXTN04120HK

V

CE(sat)

Limit

1

DC

1s

100m

Collector Current (A)

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10m

25mm x 25mm

100ms

T

=25°C

amb

1oz FR4

1 10 100

10ms

1ms

100µs

VCE Collector-Emitter Voltage (V)

Safe Operating Area

T

60

50

40

30

20

10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

=25°C

amb

25mm x 25mm

1oz FR4

D=0.5

D=0.2

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

V

CE(sat)

Limit

1

DC

1s

100m

Collector Current (A)

C

I

10m

T

50mm x 50mm

100ms

=25°C

amb

2oz FR4

1 10 100

10ms

1ms

100µs

VCE Collector-Emitter Voltage (V)

Safe Operating Area

T

=25°C

30

20

10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

amb

50mm x 50mm

2oz FR4

D=0.5

D=0.2

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

3 of 7

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

50mm x 50mm

2oz FR4

25mm x 25mm

1oz FR4

Derating Curve

January 2014

© Diodes Incorporated

Single Pulse

T

=25°C

100

10

25mm x 25mm

1

100µ 1m 10m 100m 1 10 100 1k

Max Power Dissipation (W)

1oz FR4

Pulse Width (s)

amb

50mm x 50mm

2oz FR4

Pulse Power Dissipation

ZXTN04120HK

Document number: DS36554 Rev. 3 - 2

www.diodes.com