Diodes ZXTD718MC User Manual

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DUAL 20V PNP LOW SATURATION SWITCHING TRANSISTOR

Features and Benefits

• BV

• I

• R

• Low Saturation Voltage (-220mV @ -1A)

• hFE characterized up to -6A for high current gain holds up

• Dual NPN saving footprint and component count

• Low profile 0.8mm high package for thin applications

• R

• 6mm

• Lead-Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

> -20V;

CEO

= -3.5A Continuous Collector Current

C

= 64 mΩ for Low Equivalent On Resistance

SAT

efficient, 40% lower than SOT26

θJA

2

footprint, 50% smaller than TSOP6 and SOT26

DFN3020B-8

Top View

Bottom View

B2

PNP Transistor

Mechanical Data

• Case: DFN3020B-8

• Case material: Molded Plastic. “Green” Molding Compound.

• UL Flammability Rating 94V-0

• Terminals: Pre-Plated NiPdAu leadframe.

• Nominal package height: 0.8mm

• Moisture Sensitivity: Level 1 per J-STD-020

• Solderable per MIL-STD-202, Method 208

• Weight: 0.013 grams (approximate)

Applications

• Battery charging circuits

• Load disconnect switches

• DC-DC converters

• Motor drive

• LED backlighting circuits

• Portable applications

C2

B1

2

Equivalent Circuit

Diodes Incorporated

C

E1

PNP Transistor

ZXTD718MC

C2 C2 C1 C1

C1C2

E2 B2 E1 B1

Bottom View

Pin Out

Pin 1

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTD718MCTA D22 7 8 3,000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For Packaging Details, go to our website at http://www.diodes.com.

Marking Information

ZXTD718MC

Document Number DS32000 Rev. 2 - 2

D22

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D22 = Product type Marking Code
Top view, dot denotes Pin 1

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ZXTD718MC

Maximum Ratings @ T

= 25°C unless otherwise specified

A

Parameter Symbol Limit Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current (Notes 4 and 7)
Base Current

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

B

-25

-20

-7

-6

-3.5

-1

V

A

Thermal Characteristics @ T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

1.5
12

2.45

19.6

1.13
8

1.7

13.6

83.3

W

mW/°C

°C/W

Power Dissipation
Linear Derating Factor

Thermal Resistance, Junction to Ambient

(Notes 4 & 7)
(Notes 5 & 7)

P

D

(Notes 6 & 7)
(Notes 6 & 8)

(Notes 4 & 7)
(Notes 5 & 7) 51.0
(Notes 6 & 7) 111

R

JA

θ

(Notes 6 & 8) 73.5
Thermal Resistance, Junction to Lead (Notes 7 & 9)
Operating and Storage Temperature Range

Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.

5. Same as note (4), except the device is measured at t <5 sec.

6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm

7. For a dual device with one active die.

8. For dual device with 2 active die running at equal power.

9. Thermal resistance from junction to solder-point (at the end of the collector lead).

R

JL

T

, T

J

STG

2

) FR4 PCB with high coverage of single sided 1oz copper.

17.1

-55 to +150

°C

ZXTD718MC

Document Number DS32000 Rev. 2 - 2

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Thermal Characteristics

ZXTD718MC

10

V

CE(SAT)

Limited

1

0.1

0.01

Collector Current (A)

C

I

0.1 1 10

DC

1s

8sqcm 2oz Cu
One active die

Single Pulse, T

100ms

=25°C

amb

10ms

1ms

100us

VCE Collector-Emitter Voltage (V)

Safe Operating Area

8sqcm 2oz Cu

80

One active die

60

D=0.5

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s )

Single Pulse

D=0.05

D=0.1

2.0

T

=25°C

amb

1.5

1.0

10sqcm 1oz Cu
Two active die

8sqcm 2oz Cu
One active die

0.5

10sqcm 1oz Cu

0.0
0 25 50 75 100 125 150

Max Power Di ssip at i o n (W)

One active die

Temperature (°C)

Derating Curve

225
200
175
150
125
100

75

2oz Cu

50

One active die

25

Thermal Resistance (°C/W)

0

0.1 1 10 100

1oz Cu
One active die

1oz Cu
Two active die

2oz Cu
Two active die

Board Cu Area (sqcm)

Transient Thermal Impedance

Thermal Resistance v Board Area

3.5

3.0

2.5

2.0

T

=25°C

amb

T

=150°C

j max

Continuous

2oz Cu
One active die

2oz Cu
Two active die

1.5

1.0

Dissipation (W)

D

0.5

P

0.0

0.1 1 10 100

1oz Cu
One a ctive die

1oz Cu
Two active die

Board Cu Area (sqcm)

Power Dissipation v Bo ard A rea

ZXTD718MC

Document Number DS32000 Rev. 2 - 2

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ZXTD718MC

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current

Static Forward Current Transfer Ratio (Note 10)

Collector-Emitter Saturation Voltage (Note 10)

Base-Emitter Turn-On Voltage (Note 10)
Base-Emitter Saturation Voltage (Note 10)
Output Capacitance

Transition Frequency
Turn-On Time

Turn-Off Time

Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

BV
BV
BV

I
I
I

V

CE(sat)

V

BE(on

V

BE(sat

C

CBO
CEO

EBO
CBO
EBO
CES

h

FE

obo

f

T

t

on

t

off

-25 -35 - V

-20 -25 - V

-7 8.5 - V

- - -100 nA

- - -100 nA

- - -100 nA
300 475 ­300 450 ­150 230 -

-

15 30 -

- -19 -30

- -170 -220

- -190 -250

mV

- -240 -350

- -225 -300

- -0.87 -0.95 V

- -1.01 -1.12 V

- 21 30 pF
150 180 - MHz

- 40 - ns

- 670 - ns

IC = -100µA
IC = 10mA
IE = -100µA
V

= -20V

CB

V

= -6V

EB

V

= -16V

CES

I

= -10mA, VCE= -2V

C

= -100mA, VCE= -2V

I

C

= -2A, VCE= -2V

I

C

= -6A, V

I

C

I

= - 0.1A, IB= -10mA

C

= -1A, IB= -20mA

I

C

= -1.5A, I

I

C

= -2.5A, IB= -150mA

I

C

= -3.5A, IB = -350m

I

C

IC = -3.5A, V

= -2V

CE

= -50mA

B

CE

= -2V
IC = -3.5A, IB= -350mA
V

= 10V, f = 1MHz

CB

V

= -10V, IC = -50mA,

CE

f = 100MHz
V

= -10V, IC = 1A

CC

= IB2 = 20mA

I

B1

ZXTD718MC

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Typical Electrical Characteristics

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Diodes Incorporated

ZXTD718MC

1

Tamb=25°C

100m

IC/IB=100

(V)

IC/IB=50

CE(SAT)

V

10m

IC/IB=10

1m 10m 100m 1 10

1.4

1.2

1.0

0.8

0.6

0.4

Normalised Gain

0.2

0.0

1m 10m 100m 1 10

IC Collector Current (A)

100°C

V

CE(SAT)

25°C

-55°C

v I

C

VCE=2V

IC Colle c to r C urrent (A)

630
540
450
360
270
180
90
0

0.25

IC/IB=50

0.20

0.15

(V)

0.10

CE(SAT)

V

0.05

0.00

1m 10m 100m 1 10

1.0

IC Collector Cu r rent (A)

V

CE(SAT)

IC/IB=50

100°C

25°C

v I

-55°C

C

)

FE

0.8

(V)

0.6

BE(SAT)

V

Typical Gain (h

0.4
1m 10m 100m 1 10

-55°C

25°C

100°C

IC Collector Cu r rent (A)

hFE v I

VCE=2V

1.0

0.8

(V)

0.6

BE(ON)

V

0.4

0.2

1m 10m 100m 1 10

ZXTD718MC

Document Number DS32000 Rev. 2 - 2

-55°C

25°C

IC Collector Current (A)

V

BE(ON)

100°C

v I

C

C

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V

BE(SAT)

v I

C

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ZXTD718MC

Package Outline Dimensions

A

A1

D

D4

E

L

D2

b

Z

D4

E2

e

A3

DFN3020B-8

Dim Min Max Typ

A 0.77 0.83 0.80
A1 0 0.05 0.02
A3 - - 0.15

b 0.25 0.35 0.30

D 2.95 3.075 3.00
D2 0.82 1.02 0.92
D4 1.01 1.21 1.11

e - - 0.65

E 1.95 2.075 2.00
E2 0.43 0.63 0.53

L 0.25 0.35 0.30

Z - - 0.375

All Dimensions in mm

Suggested Pad Layout

G

ZXTD718MC

Document Number DS32000 Rev. 2 - 2

C

Y2

G1

X

Y1

Y

X1

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Dimensions Value (in mm)

C 0.650
G 0.285

G1 0.090

X 0.400

X1 1.120

Y 0.730
Y1 0.500
Y2 0.365

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

www.diodes.com

Diodes Incorporated

ZXTD718MC

ZXTD718MC

Document Number DS32000 Rev. 2 - 2

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