Diodes ZXTD717MC User Manual
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Product Line o
DUAL 12V PNP LOW SATURATION TRANSISTORS
Features and Benefits
• BV
• I
• Low Saturation Voltage (-140mV @ -1A)
• R
• h
• Dual NPN saving footprint and component count
• Low profile 0.8mm high package for thin applications
• R
• 6mm
• Lead-Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
> -12V
CEO
= -4A Continuous Collector Current
C
= 60 mΩ for a low equivalent On-Resistance
SAT
specified up to -10A for a high current gain hold up
FE
efficient, 40% lower than SOT26
θJA
2
footprint, 50% smaller than TSOP6 and SOT26
DFN3020B-8
Top View
Bottom View
B2
PNP Transistor
Mechanical Data
• Case: DFN3020B-8
• Case material: Molded Plastic. “Green” Molding Compound.
• Terminals: Pre-Plated NiPdAu leadframe.
• Nominal package height: 0.8mm
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Weight: 0.013 grams (approximate)
Applications
• DC-DC Converters
• Charging circuits
• Power switches
• Motor drive
C2
B1
2
PNP Transistor
Equivalent Circuit
Diodes Incorporated
C
C2 C2 C1 C1
C2
E2 B2 E1 B1
E1
ZXTD717MC
C1
Pin 1
Bottom View
Pin-Out
Ordering Information
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTD717MCTA D11 7 8 3000
Notes: 1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
ZXTD717MC
Document Number DS31934 Rev. 3 - 2
D11
www.diodes.com
D11 = Product type marking code
Top view, dot denotes pin 1
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December 2010
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ZXTD717MC
Maximum Ratings @T
= 25°C unless otherwise specified
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Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
V
CBO
V
CEO
V
EBO
I
(Notes 3 & 6)
(Notes 4 & 6) -4.4
CM
I
I
C
B
-20
-12
-7
-12
-4
1
V
A
Thermal Characteristics @ T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
1.5
12
2.45
19.6
1.13
8
1.7
13.6
83.3
W
mW/°C
°C/W
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
(Notes 3 & 6)
(Notes 4 & 6)
P
D
(Notes 5 & 6)
(Notes 5 & 7)
(Notes 3 & 6)
(Notes 4 & 6) 51.0
(Notes 5 & 6) 111
R
JA
θ
(Notes 5 & 7) 73.5
Thermal Resistance, Junction to Lead (Notes 6 & 8)
Operating and Storage Temperature Range
Notes: 3. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.
4. Same as note (3), except the device is measured at t <5 sec.
5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm
6. For a dual device with one active die.
7. For dual device with 2 active die running at equal power.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
R
JL
, T
T
J
STG
2
) FR4 PCB with high coverage of single sided 1oz copper.
17.1
-55 to +150
°C
ZXTD717MC
Document Number DS31934 Rev. 3 - 2
2 of 7
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December 2010
© Diodes Incorporated
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Thermal Characteristics
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Diodes Incorporated
ZXTD717MC
V
10
CE(SAT)
Limited
0.01
Collecto r Curr ent (A)
C
I
1
0.1
DC
1s
8sqcm 2oz Cu
One active die
Single Pulse, T
100ms
=25°C
amb
10ms
1ms
100us
0.1 1 10
VCE Collector-Emitter Voltage (V)
Safe Operating Area
8sqcm 2oz Cu
80
One active die
60
D=0.5
40
D=0.2
20
Thermal Resistance (°C/W)
0
100µ 1m 10m 100m 1 10 100 1k
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
2.0
10sqcm 1oz Cu
Two active die
1.5
1.0
8sqcm 2oz Cu
One active die
10sqcm 1oz Cu
One active die
0.5
0.0
0 25 50 75 100 125 150
Max Power Di ss i pa t i on (W)
Temperature (°C)
Derating Curve
225
200
175
150
1oz Cu
One active die
1oz Cu
Two active die
125
100
75
50
25
Thermal Resistance (°C/W)
2oz Cu
One active die
2oz Cu
0
0.1 1 10 100
Two active die
Board Cu Area (sqcm)
Thermal Resistance v Board A rea
3.5
3.0
2.5
2.0
T
=25°C
amb
T
=150°C
j max
Continuous
2oz Cu
One active die
2oz Cu
Two active die
1.5
1.0
Dissipation (W)
D
0.5
P
0.0
0.1 1 10 100
1oz Cu
One active die
1oz Cu
Two active die
Board Cu Area (sqcm)
Power Dissipation v Board Area
ZXTD717MC
Document Number DS31934 Rev. 3 - 2
3 of 7
www.diodes.com
December 2010
© Diodes Incorporated
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