Diodes ZXTD6717E6 User Manual
ZXTD6717E6
COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS
SUMMARY
NPN: V
PNP: V
DESCRIPTION
This new combination device comprises a complementary NPN and PNP low
saturation transistor housed in the SOT23-6 package. Users benefit from very
efficient performance combining a high current operation, exceptionally low
V
CE(sat)
is ideal for use in a variety of efficient driving functions including motors, lamps,
relays and solenoids and will also benefit circuits requiring high output current switching.
=15V; V
CEO
=-12V; V
CEO
and high HFEresulting in extremely low on state losses. This dual transistor
=0.1V; IC= 1.5A;
CE(sat)
=-0.175V; IC= -1.25A;
CE(sat)
SOT23-6
FEATURES
Low Saturation Voltage
•
R
•
• h
• I
• SOT23-6 package with P
APPLICATIONS
• Various driving functions
•
ORDERING INFORMATION
DEVICE REEL SIZE
ZXTD6717E6TA 7 8mm embossed 3000 units
ZXTD6717E6TC 13 8mm embossed 10000 units
DEVICE MARKING
6717
values NPN =135mΩ at 1.5A
CE(sat)
FE
=1.5A Continuous (NPN), 1.25A (PNP)
C
High output current switches
- PNP =150mΩ at 1.25A
min 200 at 1A
Lamps
Motors
Relays and solenoids
(inches)
= 1.1W
D
TAPE WIDTH
(mm)
B2
QUANTITY
PER REEL
C2
E2
C1
B1
E1
Top View
ISSUE 2 - JULY 2001
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ZXTD6717E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT NPN LIMIT PNP UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
B
P
D
P
D
j:Tstg
15 -12 V
15 -12 V
5-5V
5-3A
1.5 -1.25 A
200 -200 mA
1.1
8.8
1.7
13.6
1.1
8.8
1.7
13.6
mW/°C
mW/°C
-55 to +150 -55 to +150 °C
W
W
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
θJA
θJA
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
2
125 °C/W
45 °C/W
ISSUE 2 - JULY 2001
ZXTD6717E6
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage V
Base-Emitter Turn-On Voltage V
Static Forward Current Transfer
Ratio
Transition Frequency f
Output Capacitance C
Turn-On Time
Turn-Off Time
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
V
(BR)CBO
V
(BR)CEO
(BR)EBO
CBO
EBO
CES
V
CE(sat)
BE(sat)
BE(on)
h
FE
T
obo
t
(on)
t
(off)
= 25°C unless otherwise stated).
amb
15 V IC=100A
15 V IC=10mA*
5VI
=100A
E
10 nA VCB=10V
10 nA VEB=4V
16.5
40
75
150
205
10 nA V
20
mV
55
100
200
245
mV
mV
mV
mV
=10V
CES
=100mA, IB=10mA*
I
C
=250mA, IB=10mA*
I
C
=500mA, IB=10mA*
I
C
=1A, IB=10mA*
I
C
=1.5A, IB=20mA*
I
C
0.93 1.1 V IC=1.5A, IB=20mA*
0.865 1.1 V IC=1.5A, VCE=2V*
200
300
250
200
75
30
420
450
390
300
150
75
=10mA, VCE=2V*
I
C
=100mA, VCE=2V*
I
C
=500mA, VCE=2V*
I
C
=1A, VCE=2V*
I
C
=3A, VCE=2V*
I
C
=5A, VCE=2V*
I
C
180 MHz IC=50mA, VCE=10V
f=100MHz
15 pF VCB=10V, f=1MHz
50
250
ns
ns
IC=1A, VCC=10V
=100mA
I
B1=IB2
ISSUE 2 - JULY 2001
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