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DUAL 50V NPN LOW SATURATION SWITCHING TRANSISTOR
Features and Benefits
• BV
• I
• Low Saturation Voltage (100mV max @ 1A)
• R
• h
• Dual NPN saving footprint and component count
• Low profile 0.8mm high package for thin applications
• R
• 6mm
• Lead-Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
> 50V
CEO
= 4A Continuous Collector Current
C
= 68mΩ for Low Equivalent On Resistance
SAT
specified up to 6A for high current gain holds up
FE
efficient, 40% lower than SOT26
θJA
2
footprint, 50% smaller than TSOP6 and SOT26
DFN3020B-8
Top View
Bottom View
B2
NPN Transistor
Mechanical Data
• Case: DFN3020B-8
• Case Material: Molded Plastic. “Green” Molding Compound.
• Terminals: Pre-Plated NiPdAu leadframe.
• UL Flammability Rating 94V-0
• Nominal package height: 0.8mm
• Moisture Sensitivity: Level 1 per J-STD-020
• Weight: 0.013 grams (approximate)
Applications
• DC – DC Converters
• MOSFET gate drivers
• Charging circuits
• Motor Control
• Power switches
• Portable applications
C
B1
E2
NPN Transistor
Equivalent Circuit
Diodes Incorporated
C
C2 C2 C1 C1
E2 B2 E1 B1
Bottom View
ZXTD619MC
C1C2
Pin 1
Pin Out
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTD619MCTA DCC 7 8 3,000
Notes: 1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
ZXTD619MC
Document Number DS31932 Rev. 3 - 2
DCC
www.diodes.com
DCC = Product type Marking Code
Top view, dot denotes Pin 1
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January 2011
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Diodes Incorporated
ZXTD619MC
Maximum Ratings @T
= 25°C unless otherwise specified
A
Parameter Symbol Limit Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current (Note 4 and 7)
Base Current
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
100 V
50 V
7 V
6 A
4 A
1 A
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
1.5
12
2.45
19.6
1.13
8
1.7
13.6
83.3
W
mW/°C
°C/W
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
(Notes 4 & 7)
(Notes 5 & 7)
P
D
(Notes 6 & 7)
(Notes 6 & 8)
(Notes 4 & 7)
(Notes 5 & 7) 51.0
(Notes 6 & 7) 111
R
JA
θ
(Notes 6 & 8) 73.5
Thermal Resistance, Junction to Lead (Notes 7 & 9)
Operating and Storage Temperature Range
Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.
5. Same as note (4), except the device is measured at t <5 sec.
6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
R
JL
T
, T
J
STG
2
) FR4 PCB with high coverage of single sided 1oz copper.
17.1
-55 to +150
°C
ZXTD619MC
Document Number DS31932 Rev. 3 - 2
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January 2011
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Thermal Characteristics
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Diodes Incorporated
ZXTD619MC
ZXTD619MC
Document Number DS31932 Rev. 3 - 2
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(BR)
(BR)
(BR)
)
)
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Diodes Incorporated
ZXTD619MC
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio
(Note 10)
Collector-Emitter Saturation Voltage
(Note 10)
Base-Emitter Turn-On Voltage (Note 10)
Base-Emitter Saturation Voltage (Note 10)
Output Capacitance
Transition Frequency
Turn-on Time
Turn-off Time
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
V
V
V
V
V
V
CBO
CEO
EBO
I
CBO
I
EBO
I
CES
h
FE
CE(sat)
BE(on
BE(sat
C
obo
f
T
t
on
t
off
100 190 - V
50 65 - V
7 8.2 - V
- - 100 nA
- - 100 nA
- - 100 nA
200
300
200
100
-
-
-
-
-
-
-
400
450
400
225
40
10
70
145
115
225
270
-
-
-
-
-
20
100
200
220
300
320
-
-
-
-
-
mV
mV
mV
mV
mV
mV
- 0.94 1.00 V
- 1.00 1.07 V
- 12 20 pF
100 165 - MHz
- 170 - ns
- 750 - ns
IC = 100µA
IC = 10mA
IE = 100µA
V
= 80V
CB
V
= 6V
EB
V
= 40V
CES
I
= 10mA, V
C
= 200mA, V
I
C
I
= 1A, V
C
= 2A, V
I
C
I
= 6A, VCE= 2V
C
I
=0.1A, IB = 10mA
C
= 1A, IB = 50mA
I
C
I
= 1A, IB = 10mA
C
= 2A, IB = 50mA
I
C
I
= 3A, IB = 100mA
C
= 4A, IB= 200mA
I
C
CE
CE
CE
CE
= 2V
= 2V
= 2V
= 2V
IC = 4A, VCE= 2V
IC = 4A, IB = 200mA
V
= 10V. f = 1MHz
CB
= 10V, IC = 50mA,
V
CE
f = 100MHz
V
= 10V, IC = 1A
CC
= IB2 = 10mA
I
B1
ZXTD619MC
Document Number DS31932 Rev. 3 - 2
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Typical Electrical Characteristics
Tamb=25°C
100m
(V)
10m
CE(SAT)
V
IC/IB=100
IC/IB=50
IC/IB=10
(V)
V
0.25
0.20
0.15
0.10
CE(SAT)
0.05
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Diodes Incorporated
ZXTD619MC
IC/IB=50
100°C
25°C
-55°C
1m
1m 10m 100m 1 10
IC Colle cto r Current (A)
V
1.2
1.0
0.8
0.6
0.4
0.2
Normalised Gain
0.0
1m 10m 100m 1 10
100°C
25°C
CE(SAT)
-55°C
v I
C
VCE=2V
IC Colle cto r Current (A)
hFE v I
1.0
VCE=2V
0.8
-55°C
C
(V)
0.6
BE(ON)
V
0.4
25°C
100°C
630
540
450
360
270
180
90
0
0.00
1m 10m 100m 1 10
IC Collecto r Current (A)
V
1.0
IC/IB=50
)
FE
0.8
-55°C
CE(SAT)
v I
C
(V)
0.6
BE(SAT)
V
Typical Gain (h
0.4
1m 10m 100m 1 10
25°C
100°C
IC Collecto r Current (A)
V
BE(SAT)
v I
C
1m 10m 100m 1 10
IC Colle cto r Current (A)
V
ZXTD619MC
Document Number DS31932 Rev. 3 - 2
BE(ON)
v I
C
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ZXTD619MC
Package Outline Dimensions
A
A1
D
D4
E
L
D2
b
Z
D4
E2
e
A3
DFN3020B-8
Dim Min Max Typ
A 0.77 0.83 0.80
A1 0 0.05 0.02
A3 - - 0.15
b 0.25 0.35 0.30
D 2.95 3.075 3.00
D2 0.82 1.02 0.92
D4 1.01 1.21 1.11
e - - 0.65
E 1.95 2.075 2.00
E2 0.43 0.63 0.53
L 0.25 0.35 0.30
Z - - 0.375
All Dimensions in mm
Suggested Pad Layout
G
ZXTD619MC
Document Number DS31932 Rev. 3 - 2
C
Y2
G1
X
Y1
Y
X1
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Dimensions Value (in mm)
C 0.650
G 0.285
G1 0.090
X 0.400
X1 1.120
Y 0.730
Y1 0.500
Y2 0.365
January 2011
© Diodes Incorporated
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
Diodes Incorporated
ZXTD619MC
ZXTD619MC
Document Number DS31932 Rev. 3 - 2
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January 2011
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