Diodes ZXTD619MC User Manual

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DUAL 50V NPN LOW SATURATION SWITCHING TRANSISTOR

Features and Benefits

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• Low Saturation Voltage (100mV max @ 1A)

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• Dual NPN saving footprint and component count

• Low profile 0.8mm high package for thin applications

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• 6mm

• Lead-Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

> 50V

CEO

= 4A Continuous Collector Current

C

= 68mΩ for Low Equivalent On Resistance

SAT

specified up to 6A for high current gain holds up

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efficient, 40% lower than SOT26

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footprint, 50% smaller than TSOP6 and SOT26

DFN3020B-8

Top View

Bottom View

B2

NPN Transistor

Mechanical Data

• Case: DFN3020B-8

• Case Material: Molded Plastic. “Green” Molding Compound.

• Terminals: Pre-Plated NiPdAu leadframe.

• UL Flammability Rating 94V-0

• Nominal package height: 0.8mm

• Moisture Sensitivity: Level 1 per J-STD-020

• Weight: 0.013 grams (approximate)

Applications

• DC – DC Converters

• MOSFET gate drivers

• Charging circuits

• Motor Control

• Power switches

• Portable applications

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B1

E2

NPN Transistor

Equivalent Circuit

Diodes Incorporated

C

C2 C2 C1 C1

E2 B2 E1 B1

Bottom View

ZXTD619MC

C1C2

Pin 1

Pin Out

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTD619MCTA DCC 7 8 3,000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For Packaging Details, go to our website at http://www.diodes.com.

Marking Information

ZXTD619MC

Document Number DS31932 Rev. 3 - 2

DCC

www.diodes.com

DCC = Product type Marking Code Top view, dot denotes Pin 1

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ZXTD619MC

Maximum Ratings @T

= 25°C unless otherwise specified

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Parameter Symbol Limit Unit

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (Note 4 and 7) Base Current

V

CBO

V

CEO

V

EBO

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CM

I

C

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B

100 V

50 V

7 V 6 A 4 A 1 A

Thermal Characteristics @T

= 25°C unless otherwise specified

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Characteristic Symbol Value Unit

1.5 12

2.45

19.6

1.13 8

1.7

13.6

83.3

W

mW/°C

°C/W

Power Dissipation Linear Derating Factor

Thermal Resistance, Junction to Ambient

(Notes 4 & 7) (Notes 5 & 7)

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(Notes 6 & 7) (Notes 6 & 8)

(Notes 4 & 7) (Notes 5 & 7) 51.0 (Notes 6 & 7) 111

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(Notes 6 & 8) 73.5 Thermal Resistance, Junction to Lead (Notes 7 & 9) Operating and Storage Temperature Range

Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.

5. Same as note (4), except the device is measured at t <5 sec.

6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm

7. For a dual device with one active die.

8. For dual device with 2 active die running at equal power.

9. Thermal resistance from junction to solder-point (at the end of the collector lead).

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STG

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) FR4 PCB with high coverage of single sided 1oz copper.

17.1

-55 to +150

°C

ZXTD619MC

Document Number DS31932 Rev. 3 - 2

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www.diodes.com

January 2011

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Thermal Characteristics

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Diodes Incorporated

ZXTD619MC

Document Number DS31932 Rev. 3 - 2

3 of 7

www.diodes.com

January 2011