Diodes ZXTD4591E6 User Manual

ZXTD4591E6

DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS

SUMMARY
NPN: V
PNP: V

DESCRIPTION

Complementary NPN and PNP medium power transistors packaged in the 6
lead SOT23 package.

FEATURES

Low Equivalent On Resistance - NPN R

•

Low Saturation Voltage

•

• h

• I

C

• SOT23-6 package

APPLICATIONS

• MOSFET gate driver

• Low Power Motor Drive

•

Low Power DC-DC Converters

ORDERING INFORMATION

DEVICE REEL SIZE

ZXTD4591E6TA 7 8mm embossed 3000 units

=60V; IC= 1A; hFE=100-300

CEO

=-60V; IC= -1A; hFE=100-300

CEO

- PNP R

characterised up to 2A

FE

=1A Continuous Collector Current

(inches)

CE(sat)
CE(sat)

TAPE WIDTH
(mm)

210mΩat 1A
355mΩat -1A

QUANTITY
PER REEL

B2

SOT23-6

C2

B1

E2

C1

B1
C2

Top View

C1

E1

E1

4591

B2
E2

ZXTD4591E6TC 13 8mm embossed 10000 units

DEVICE MARKING

4591

ISSUE 1 - JULY 2000

1

ZXTD4591E6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT NPN LIMIT PNP UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Power Dissipation at TA=25°C (a)
Linear Derating Factor

Power Dissipation at TA=25°C (b)
Linear Derating Factor

Operating and Storage Temperature Range T

CBO

CEO

EBO

CM

C

B

P

D

P

D

j:Tstg

80 -80 V

60 -60 V

5-5V

2-2A

1-1A

500 -500 mA

1.1

8.8

1.7

13.6

1.1

8.8

1.7

13.6

mW/°C

mW/°C

-55 to +150 -55 to +150 °C

W

W

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a) R

Junction to Ambient (b) R

θJA

θJA

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.

ISSUE 1 - JULY 2000

2

113 °C/W

73 °C/W

ZXTD4591E6

PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown
Voltage

Collector-Emitter Breakdown
Voltage

Emitter-Base Breakdown Voltage V

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector Emitter Cut-Off Current I

Collector-Emitter Saturation
Voltage

Base-Emitter Saturation Voltage V

Base-Emitter Turn-On Voltage V

Static Forward Current Transfer
Ratio

Transition Frequency f

Output Capacitance C

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

V

(BR)CBO

V

(BR)CEO

(BR)EBO

CBO

EBO

CES

V

CE(sat)

BE(sat)

BE(on)

h

FE

T

obo

= 25°C unless otherwise stated).

amb

-80 V IC=-100␮A

-60 V IC=-10mA*

-5 V IE=-100␮A

-100 nA VCB=-60V

-100 nA VEB=-4V

-100 nA V

-0.3

-0.6VV

=-60V

CES

IC=-500mA, IB=-50mA*

=-1A, IB=-100mA*

I

C

-1.2 V IC=-1A, IB=-100mA*

-1.0 V IC=-1A, VCE=-5V*

100
100

80
15

300

IC=-1mA, VCE=-5V*

=-500mA, VCE=-5V*

I

C

=-1A, VCE=-5V*

I

C

=-2A, VCE=-5V*

I

C

150 MHz IC=-50mA, VCE=-10V

f=100MHz

10 pF VCB=-10V, f=1MHz

ISSUE 1 - JULY 2000

3

ZXTD4591E6

NPN
ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown
Voltage

Collector-Emitter Breakdown
Voltage

Emitter-Base Breakdown Voltage V

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector Emitter Cut-Off Current I

Collector-Emitter Saturation
Voltage

Base-Emitter Saturation Voltage V

Base-Emitter Turn-On Voltage V

Static Forward Current Transfer
Ratio

Transition Frequency f

Output Capacitance C

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

V

(BR)CBO

V

(BR)CEO

(BR)EBO

CBO

EBO

CES

V

CE(sat)

BE(sat)

BE(on)

h

FE

T

obo

= 25°C unless otherwise stated).

amb

80 V IC=100␮A

60 V IC=10mA*

5VI

=100␮A

E

100 nA VCB=60V

100 nA VEB=4V

100 nA V

0.25

0.5

V
V

=60V

CES

IC=500mA, IB=50mA*

=1A, IB=100mA*

I

C

1.1 V IC=1A, IB=100mA*

1.0 V IC=1A, VCE=5V*

100
100

80
30

300

IC=1mA, VCE=5V*

=500mA, VCE=5V*

I

C

=1A, VCE=5V*

I

C

=2A, VCE=5V*

I

C

150 MHz IC=50mA, VCE=10V

f=100MHz

10 pF VCB=10V, f=1MHz

ISSUE 1 - JULY 2000

4

NPN TYPICAL CHARACTERISTICS

ZXTD4591E6

-(V)

V

- Typical Gain
h

0.6

+25 ° C

0.5

0.4

0.3

IC/IB=10
IC/IB=50

0.6

C/IB=10

I

0.5

0.4

0.3

-55 ° C

+25 ° C

+100 ° C

-(V)

0.2

CE(sat)

0.1

0

1mA

100mA10mA

I

C-Collector Current

10A1A

VCE(sat) vIC

300

+100 ° C

240

0.2

CE(sat)

V

0.1

0

1mA

10A1A10mA 100mA

IC-Collector Current

VCE(sat) vIC

1.4

C/IB=10VCE=5V

I

1.2

1.0

180

+25 ° C

120

FE

-55 ° C

60

0

1mA

100mA10mA 10A1A

IC-Collector Current

hFE VIC

0.8

0.6

-(V)

0.4

BE(sat)

V

0.2

0

1mA

10mA

100mA 1A

-55 °C

+25 ° C

+100 ° C

10A

IC-Collector Current

VBE(sat) vIC

V

CE=5V

1.2

1.0

0.8

-(V)

0.6

BE(on)

V

0.4

0.2

0

1mA

ISSUE 1 - JULY 2000

100mA10mA

C-Collector Current

I

VBE(on) vIC

-55 ° C

+25 ° C

+100 ° C

10

1

0.1

-Collector Current (A)

C

I

0.01

10A1A

0.001

DC

1s

100ms

10ms

1ms

100µs

0.1 10 100

1

VCE - Collector Emitter Voltage (V)

Safe Operating Area

5

PNP TYPICAL CHARACTERISTICS

ZXTD4591E6

0.6

+25 °C

0.5

0.4

-(V)

0.3

CE(sat)

V

0.2

0.1

0

1mA

IC/IB=10
IC/IB=50

IC-Collector Current

VCE(sat) vIC

400

CE=5V

V

+100 °C

300

+25 °C

200

-55 °C

-TypicalGain

100

FE

h

0

1mA 100mA10mA 10A1A

I

-Collector Current

C

hFE VIC

0.6

I

C/IB=10

0.5

0.4

-(V)

0.3

CE(sat)

V

0.2

0.1

100mA10mA

10A1A

0

1mA

-55 °C

+25 °C

+100 °C

10A1A10mA 100mA

IC-Collector Current

VCE(sat) vIC

I

C/IB=10

1.0

0.8

-(V)

0.6

0.4

BE(sat)

V

0.2

0

1mA

10mA

100mA 1A 10A

-55 °C

+25 °C

+100 °C

IC-Collector Current

VBE(sat) vIC

1.2

CE=5V

V

1.0

0.8

-(V)

0.6

BE(on)

0.4

V

0.2

0

1mA

ISSUE 1 - JULY 2000

+25 °C

+100 °C

100mA10mA

IC-Collector Current

VBE(on) vIC

-55 °C

10

1

DC

1s

100ms

0.1

-Collector Current (A)

C

I

10A1A

0.01

10ms

1ms

100us

0.1V 10V 100V

1V

VCE - Collector Emitter Voltage (V)

Safe Operating Area

6

ZXTD4591E6

PACKAGE DIMENSIONS PAD LAYOUT DETAILS

e

b

2

L

E

e1

D

AA2

a

A1

DIM Millimetres Inches

Min Max Min Max
A 0.90 1.45 0.35 0.057
A1 0.00 0.15 0 0.006
A2 0.90 1.30 0.035 0.051
b 0.35 0.50 0.014 0.019
C 0.09 0.20 0.0035 0.008
D 2.80 3.00 0.110 0.118
E 2.60 3.00 0.102 0.118
E1 1.50 1.75 0.059 0.069
L 0.10 0.60 0.004 0.002
e 0.95 REF 0.037 REF
e1 1.90 REF 0.074 REF
L

0° 10° 0° 10°

E1

DATUM A

C

Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: [phone] (Sales), (44)161 622 4444 (General Enquiries)
Fax: [phone]

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Germany USA Kwai Fong, Hong Kong © Zetex plc 2000
Telefon: [phone] Telephone: [phone] Telephone:[phone]
Fax: [phone] Fax: [phone] Fax: [phone] Internet:http://www.zetex.com

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.

ISSUE 1 - JULY 2000

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