Diodes ZXTD4591E6 User Manual
ZXTD4591E6
DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS
SUMMARY
NPN: V
PNP: V
DESCRIPTION
Complementary NPN and PNP medium power transistors packaged in the 6
lead SOT23 package.
FEATURES
Low Equivalent On Resistance - NPN R
•
Low Saturation Voltage
•
• h
• I
C
• SOT23-6 package
APPLICATIONS
• MOSFET gate driver
• Low Power Motor Drive
•
Low Power DC-DC Converters
ORDERING INFORMATION
DEVICE REEL SIZE
ZXTD4591E6TA 7 8mm embossed 3000 units
=60V; IC= 1A; hFE=100-300
CEO
=-60V; IC= -1A; hFE=100-300
CEO
- PNP R
characterised up to 2A
FE
=1A Continuous Collector Current
(inches)
CE(sat)
CE(sat)
TAPE WIDTH
(mm)
210mΩat 1A
355mΩat -1A
QUANTITY
PER REEL
B2
SOT23-6
C2
B1
E2
C1
B1
C2
Top View
C1
E1
E1
4591
B2
E2
ZXTD4591E6TC 13 8mm embossed 10000 units
DEVICE MARKING
4591
ISSUE 1 - JULY 2000
1
ZXTD4591E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT NPN LIMIT PNP UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
B
P
D
P
D
j:Tstg
80 -80 V
60 -60 V
5-5V
2-2A
1-1A
500 -500 mA
1.1
8.8
1.7
13.6
1.1
8.8
1.7
13.6
mW/°C
mW/°C
-55 to +150 -55 to +150 °C
W
W
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
θJA
θJA
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
ISSUE 1 - JULY 2000
2
113 °C/W
73 °C/W
ZXTD4591E6
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage V
Base-Emitter Turn-On Voltage V
Static Forward Current Transfer
Ratio
Transition Frequency f
Output Capacitance C
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
V
(BR)CBO
V
(BR)CEO
(BR)EBO
CBO
EBO
CES
V
CE(sat)
BE(sat)
BE(on)
h
FE
T
obo
= 25°C unless otherwise stated).
amb
-80 V IC=-100A
-60 V IC=-10mA*
-5 V IE=-100A
-100 nA VCB=-60V
-100 nA VEB=-4V
-100 nA V
-0.3
-0.6VV
=-60V
CES
IC=-500mA, IB=-50mA*
=-1A, IB=-100mA*
I
C
-1.2 V IC=-1A, IB=-100mA*
-1.0 V IC=-1A, VCE=-5V*
100
100
80
15
300
IC=-1mA, VCE=-5V*
=-500mA, VCE=-5V*
I
C
=-1A, VCE=-5V*
I
C
=-2A, VCE=-5V*
I
C
150 MHz IC=-50mA, VCE=-10V
f=100MHz
10 pF VCB=-10V, f=1MHz
ISSUE 1 - JULY 2000
3
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