Diodes ZXTC6720MC User Manual

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DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION

Features and Benefits

NPN Transistor

• BV

• I

• Low Saturation Voltage (185mV max @ 1A)

• R

PNP Transistor

• BV

• I

• Low Saturation Voltage (-220mV max @ -1A)

• R

• h

FE

• Low profile 0.8mm high package for thin applications

• R

θJA

• 6mm

• Lead-Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Top View

> 80V

CEO

= 3.5A Continuous Collector Current

C

= 68mΩ for a low equivalent On-Resistance

SAT

> -70V

CEO

= -2.5A Continuous Collector Current

C

= 117mΩ for a low equivalent On-Resistance

SAT

characterized up to -5A for high current gain hold up

efficient, 40% lower than SOT26

2

footprint, 50% smaller than TSOP6 and SOT26

DFN3020B-8

B1

Bottom View

NPN Transistor

Mechanical Data

• Case: DFN3020B-8

• Case Material: Molded Plastic. “Green” Molding Compound.

• Terminals: Pre-Plated NiPdAu leadframe.

• Nominal package height: 0.8mm

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Weight: 0.013 grams (approximate)

Applications

• DC – DC Converters

• Charging circuits

• Power switches

• Motor control

• Portable applications

C

B2

PNP Transistor

Equivalent Circuit

Diodes Incorporated

C2

C2 C2 C1 C1

2

E2 B2 E1 B1

ZXTC6720MC

C1C2

Pin 1

Bottom View

Pin Out

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTC6720MCTA DE4 7 8 3,000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For Packaging Details, go to our website at http://www.diodes.com.

Marking Information

ZXTC6720MC

Document number: DS31929 Rev. 3 - 2

DE4

www.diodes.com

DE4 = Product type marking code
Top View, Dot Denotes Pin 1

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ZXTC6720MC

Maximum Ratings @ T

= 25°C unless otherwise specified

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Parameter Symbol NPN PNP Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current

Continuous Collector Current
Base Current

V

CBO

V

CEO

V

EBO

I
(Notes 4 & 7)
(Notes 5 & 7) 4 -3

CM

I

I

C

B

100 -70

80 -70

7 -7
5 -3

3.5 -2.5

1

V

A

Thermal Characteristics @ T

= 25°C unless otherwise specified

A

Characteristic Symbol NPN PNP Unit

1.5
12

2.45

19.6

1.13
8

1.7

13.6

83.3

W

mW/°C

°C/W

Power Dissipation
Linear Derating Factor

Thermal Resistance, Junction to Ambient

(Notes 4 & 7)
(Notes 5 & 7)

P

D

(Notes 6 & 7)
(Notes 6 & 8)

(Notes 4 & 7)
(Notes 5 & 7) 51.0
(Notes 6 & 7) 111

R

JA

θ

(Notes 6 & 8) 73.5
Thermal Resistance, Junction to Lead (Notes 7 & 9)
Operating and Storage Temperature Range

Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.

5. Same as note (4), except the device is measured at t <5 sec.

6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm

7. For a dual device with one active die.

8. For dual device with 2 active die running at equal power.

9. Thermal resistance from junction to solder-point (at the end of the collector lead).

R

JL

T

, T

J

STG

2

) FR4 PCB with high coverage of single sided 1oz copper.

17.1

-55 to +150

°C

ZXTC6720MC

Document number: DS31929 Rev. 3 - 2

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Thermal Characteristics

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ZXTC6720MC

DC

1

V

0.1

Limited

Collector Current (A)

C

I

0.01

0.1 1 10 100

1s

CE(SAT)

8sqcm 2oz Cu
One active die

Single Pulse, T

100ms

amb

=25°C

10ms

1ms

100us

VCE Colle c to r-Emitter Voltage (V)

NPN Safe Operating Area

8sqcm 2oz Cu

80

One active die

60

D=0.5

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Sing le Pu ls e

D=0.05

D=0.1

1

0.1

Collector Current (A)

C

0.01

-I

0.1 1 10 100

DC

V

CE(SAT)

Limited

8sqcm 2oz Cu
One active die

Single Pulse, T

1s

100ms

amb

=25°C

10ms

1ms

100us

-VCE Collector-Emitter Voltage (V)

PNP Safe Operating Area

2.0

1.5

1.0

0.5

0.0
0 25 50 75 100 125 150

Max Power Dissipation (W)

Temperature (°C)

10sqcm 1o z Cu
Two active die

8sqcm 2oz Cu
One active die

10sqcm 1oz Cu
One active die

Transient Thermal Impedance

3.5

3.0

2.5

2.0

T

=25°C

amb

T

=150°C

j max

Continuous

2oz Cu
One active die

2oz Cu
Two active die

1.5

1.0

Dissipation (W)

D

0.5

P

0.0
100m 1 10 100

1oz Cu
One active die

1oz Cu
Two active die

Board Cu Area (sqcm)

Power Dissipation v Board Area

ZXTC6720MC

Document number: DS31929 Rev. 3 - 2

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225
200
175
150
125
100

75
50
25

Thermal Resistance (°C/W)

0

0.1 1 10 100

Thermal Resistance v Board Area

Derating Curve

1oz Cu
One a ctive die

2oz Cu
Once a ctive die

2oz Cu
Two active die

Board Cu Area (sqcm)

1oz Cu
Two active die

© Diodes Incorporated

January 2011