Diodes ZXTC6719MC User Manual
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Product Line o
DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION
Features and Benefits
NPN Transistor
• BV
• I
• Low Saturation Voltage (100mV max @ 1A)
• R
PNP Transistor
• BV
• I
• Low Saturation Voltage (-220mV max @ -1A)
• R
• h
FE
• Low profile 0.8mm high package for thin applications
• R
θJA
• 6mm
• Lead-Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Top View
> 50V
CEO
= 4A Continuous Collector Current
C
= 68mΩ for a low equivalent On-Resistance
SAT
> -40V
CEO
= -3A Continuous Collector Current
C
= 104mΩ for a low equivalent On-Resistance
SAT
characterized up to 6A for high current gain hold up
efficient, 40% lower than SOT26
2
footprint, 50% smaller than TSOP6 and SOT26
DFN3020B-8
B1
Bottom View
NPN Transistor
Mechanical Data
• Case: DFN3020B-8
• Case material: Molded Plastic. “Green” Molding Compound.
• Terminals: Pre-Plated NiPdAu leadframe.
• Nominal package height: 0.8mm
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Weight: 0.013 grams (approximate)
Applications
• DC – DC Converters
• Charging circuits
• Power switches
• Motor control
• CCFL Backlighting circuits
• Portable applications
C
B2
PNP Transistor
Equivalent Circuit
Diodes Incorporated
C2
C2 C2 C1 C1
2
E2 B2 E1 B1
ZXTC6719MC
C1C2
Pin 1
Bottom View
Pin Out
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTC6719MCTA DC3 7 8 3000
Notes: 1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
ZXTC6719MC
Document number: DS31928 Rev. 3 - 2
DC3
DC3 = Product type Marking Code
Dot denotes Pin 1
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ZXTC6719MC
Maximum Ratings @ T
= 25°C unless otherwise specified
A
Parameter Symbol NPN PNP Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
V
CBO
V
CEO
V
EBO
I
(Notes 4 & 7)
(Notes 5 & 7) 4.5 -3.5
CM
I
I
C
B
100 -50
50 -40
7 -7
6 -4
4 -3
1
V
A
Thermal Characteristics @ T
= 25°C unless otherwise specified
A
Characteristic Symbol NPN PNP Unit
1.5
12
2.45
19.6
1.13
8
1.7
13.6
83.3
W
mW/°C
°C/W
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
(Notes 4 & 7)
(Notes 5 & 7)
P
D
(Notes 6 & 7)
(Notes 6 & 8)
(Notes 4 & 7)
(Notes 5 & 7) 51.0
(Notes 6 & 7) 111
R
JA
θ
(Notes 6 & 8) 73.5
Thermal Resistance, Junction to Lead (Notes 7 & 9)
Operating and Storage Temperature Range
Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.
5. Same as note (3), except the device is measured at t <5 sec.
6. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
R
JL
T
, T
J
STG
2
) FR4 PCB with high coverage of single sided 1oz copper.
17.1
-55 to +150
°C
ZXTC6719MC
Document number: DS31928 Rev. 3 - 2
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Thermal Characteristics
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ZXTC6719MC
10
1
0.1
Collector Current (A )
C
I
0.01
0.1 1 10 100
DC
V
CE(SAT)
Limited
8sqcm 2oz Cu
One active die
Single Pulse, T
1s
100ms
=25°C
amb
10ms
1ms
100us
VCE Collector-Emitter Voltage (V)
NPN Safe Operating Area
8sqcm 2oz Cu
80
One active die
60
D=0.5
40
D=0.2
20
Thermal Resistance (°C/W)
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Single Pulse
D=0.05
D=0.1
10
1
0.1
Collector Current (A )
C
0.01
-I
0.1 1 10 100
DC
V
CE(SAT)
Limited
8sqcm 2oz Cu
One active die
Single Pulse, T
1s
100ms
amb
10ms
=25°C
1ms
100us
-VCE Collector-Emitter Voltage (V)
PNP Safe Operating A rea
2.0
1.5
1.0
0.5
0.0
0 255075100125150
Max Power Dissipation (W)
Temperature (°C)
10sqcm 1oz Cu
Two active die
8sqcm 2oz Cu
One active die
10sqcm 1oz Cu
One active die
Transient Thermal Impedance
3.5
3.0
2.5
2.0
T
=25°C
amb
=150°C
T
j max
Continuous
2oz Cu
One active die
2oz Cu
Two active die
1.5
1.0
Dissipation (W)
D
0.5
P
0.0
100m 1 10 100
1oz Cu
One active die
1oz Cu
Two active die
Board Cu Area (sqcm)
Power Dissipation v B o ard Area
ZXTC6719MC
Document number: DS31928 Rev. 3 - 2
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225
200
175
150
125
100
75
50
25
Thermal Resistance (°C/W)
0
0.1 1 10 100
Thermal Resistance v Board Area
Derating Curve
1oz Cu
One active die
2oz Cu
Once active die
2oz Cu
Two active die
Board Cu Area (s qcm)
1oz Cu
Two active die
© Diodes Incorporated
January 2011
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