Diodes ZXTC6717MC User Manual

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COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR

Features

NPN Transistor

• BV

• I

• Low Saturation Voltage (100mV max @ 1A)

• R

PNP Transistor

• BV

• I

• Low Saturation Voltage (-140mV max @ -1A)

• R

• h

FE

• Low profile 0.8mm high package for thin applications

• R

θJA

• 6mm

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP capable (Note 4)

Top View Bottom View

> 15V

CEO

= 4.5A Continuous Collector Current

C

= 45mΩ for a low equivalent On-Resistance

SAT

> -12V

CEO

= -4A Continuous Collector Current

C

= 60mΩ for a low equivalent On-Resistance

SAT

characterized up to 12A for high current gain hold up

efficient, 40% lower than SOT26

2

footprint, 50% smaller than TSOP6 and SOT26

W-DFN3020-8

Type B

1

Bottom View

NPN Transistor

Mechanical Data

• Case: W-DFN3020-8 Type B

• Nominal package height: 0.8mm

• Case material: molded plastic. “Green” molding compound.

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - NiPdAu, Solderable per MIL-STD-202,

Method 208

• Weight: 0.013 grams (approximate)

Applications

• DC – DC Converters

• Charging circuits

• Power switches

• Motor control

• LED Backlighting circuits

• Portable applications

C

B2

E

PNP Transistor

Diodes Incorporated

e4

C

C2 C2 C1 C1

E2 B2 E1 B1

E

ZXTC6717MC

C2

C1

Pin-Out

Pin 1

Ordering Information (Note 4 & 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTC6717MCTA AEC-Q101 DA1 7 8 3,000

ZXTC6717MCQTA Automotive DA1 7 8 3,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.

5. For packaging details, go to our website at http://www.diodes.com

Marking Information

ZXTC6717MC

Document number: DS31926 Rev. 4 - 2

DA1

www.diodes.com

DA1 = Product type Marking Code
Dot denotes Pin 1

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October 2012

© Diodes Incorporated

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Maximum Ratings (@T

= +25°C, unless otherwise specified.)

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Characteristic Symbol NPN PNP Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current

Continuous Collector Current
Base Current

V

CBO

V

CEO

V

EBO

I
(Notes 6 & 9)
(Notes 7 & 9) 5 -4.45

CM

I
I

C

B

40 -20 V
15 -12 V

7 -7 V

15 -12 A

4.5 -4

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol NPN PNP Unit

(Notes 6 & 9)

Power Dissipation
Linear Derating Factor

(Notes 7 & 9)
(Notes 8 & 9)

P

D

(Notes 8 & 10)
(Notes 6 & 9)

Thermal Resistance, Junction to Ambient

(Notes 7 & 9) 51.0
(Notes 8 & 9) 111

R

JA

θ

(Notes 8 & 10) 73.5
Thermal Resistance, Junction to Lead (Notes 9 & 11)
Operating and Storage Temperature Range

Notes: 6. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.

7. Same as note (6), except the device is measured at t <5 sec.

8. Same as note (6), except the device is surface mounted on 31mm x 31mm (10cm

9. For a dual device with one active die.

10. For dual device with 2 active die running at equal power.

11. Thermal resistance from junction to solder-point (on the exposed collector pads).

R

JL

, T

T

J

STG

2

) FR4 PCB with high coverage of single sided 1oz copper.

ZXTC6717MC

Document number: DS31926 Rev. 4 - 2

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www.diodes.com

Diodes Incorporated

ZXTC6717MC

A

1 A

1.5
12

2.45

19.6

1.13
8

1.7

13.6

83.3

17.1

-55 to +150

© Diodes Incorporated

W

mW/°C

°C/W

°C

October 2012

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ZXTC6717MC

Thermal Characteristics and Derating Information

V

CE(SAT)

10

Limited

DC

1

0.1

Collecto r Curre nt (A)

C

I

0.01

0.1 1 10

1s

8sqcm 2oz Cu
One a ctive die

Single Pulse, T

100ms

amb

10ms

1ms

100us

=25°C

VCE Collector-Emitter Voltage (V)

NPN Safe Operating Area

8sqcm 2oz Cu

80

One active die

60

D=0.5

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Single Pulse

D=0.05

D=0.1

V

CE(SAT)

10

Limited

1

0.1

Collector Current (A)

C

0.01

-I

0.1 1 10

DC

1s

8sqcm 2oz Cu
One active die

Single Pulse, T

100ms

=25°C

amb

10ms

1ms

100us

-VCE Collector-Emitter Voltage (V)

PNP Safe Operating Area

2.0

1.5

1.0

0.5

0.0
0 255075100125150

Max Powe r D i ss i p a tion (W)

Temperature (°C)

10sqcm 1oz Cu
Two active die

8sqcm 2oz Cu
One active die

10sqcm 1oz Cu
One active die

Transient Thermal Impedance

3.5

3.0

2.5

2.0

T

=25°C

amb

=150°C

T

j max

Continuous

2oz Cu
One active die

2oz Cu
Two active die

1.5

1.0

Dissipation (W)

D

0.5

P

0.0
100m 1 10 100

1oz Cu
One active die

1oz Cu
Two active die

Board Cu Area (sqcm)

Power Dissipation v Board Area

ZXTC6717MC

Document number: DS31926 Rev. 4 - 2

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www.diodes.com

225
200
175
150
125
100

75
50
25

Thermal Resistance (°C/W)

0

0.1 1 10 100

Thermal Resistance v Board A rea

Derating Curve

1oz Cu
One active die

2oz Cu
Once active die

2oz Cu
Two active die

Board Cu Area (sqcm)

1oz Cu
Two active die

© Diodes Incorporated

October 2012