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COMPLEMENTARY 40V HIGH PERFORMANCE TRANSISTOR
Features
NPN Transistor
• BV
• I
• Low Saturation Voltage (500mV max @ 1A)
• R
PNP Transistor
• BV
• I
• Low Saturation Voltage (-500mV max @ -1A)
• R
• h
FE
• Low profile 0.8mm high package for thin applications
• R
θJA
• 6mm
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP capable (Note 4)
Top View
> 40V
CEO
= 3A Continuous Collector Current
C
= 195mΩ for a low equivalent On-Resistance
SAT
> -40V
CEO
= -3A Continuous Collector Current
C
= 350mΩ for a low equivalent On-Resistance
SAT
characterized up to 2A for high current gain hold up
efficient, 40% lower than SOT26
2
footprint, 50% smaller than TSOP6 and SOT26
W-DFN3020-8
T
e B
B1
Bottom View
NPN Transistor
Mechanical Data
• Case: W-DFN3020-8 Type B
• Nominal package height: 0.8mm
• Case material: molded plastic. “Green” molding compound.
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - NiPdAu, Solderable per MIL-STD-202,
Method 208
• Weight: 0.013 grams (approximate)
Applications
• DC – DC Converters
• Charging circuits
• Power switches
• LED Backlighting circuits
• Motor control
• Portable applications
C
B2
PNP Transistor
Equivalent Circuit
Diodes Incorporated
e4
C2
C2 C2 C1 C1
2
E2 B2 E1 B1
ZXTC4591AMC
C1C2
Pin 1
Bottom View
Pin Out
Ordering Information (Note 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTC4591AMCTA AEC-Q101 91A 7 8 3,000
ZXTC4591AMCQTA Automotive 91A 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
<1000ppm antimony compounds.
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com
Marking Information
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
91A
www.diodes.com
91A = Product type marking code
Top view, dot denotes pin 1
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Diodes Incorporated
ZXTC4591AMC
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Parameter Symbol NPN PNP Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
V
CBO
V
CEO
V
EBO
I
(Notes 6 & 9)
(Notes 7 & 9) 2.5 -2
CM
I
I
C
B
40 -40
40 -40
V
7 -7
3 -3
2 -1.5
A
300 mA
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol NPN PNP Unit
1.5
12
2.45
19.6
1.13
8
1.7
13.6
83.3
W
mW/°C
°C/W
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
(Notes 6 & 9)
(Notes 7 & 9)
P
D
(Notes 8 & 9)
(Notes 8 & 10)
(Notes 6 & 9)
(Notes 7 & 9) 51.0
(Notes 8 & 9) 111
R
JA
θ
(Notes 8 & 10) 73.5
Thermal Resistance, Junction to Lead (Notes 9 & 11)
Operating and Storage Temperature Range
Notes: 6. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.
7. Same as note (6), except the device is measured at t <5 sec.
8. Same as note (6), except the device is surface mounted on 31mm x 31mm (10cm
9. For a dual device with one active die.
10. For dual device with 2 active die running at equal power.
11. Thermal resistance from junction to solder-point (on the exposed collector pad).
R
JL
T
, T
J
STG
2
) FR4 PCB with high coverage of single sided 1oz copper.
17.1
-55 to +150
°C
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
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Thermal Characteristics and Derating Information
V
CE(SAT)
Limited
1
0.1
Collector Current (A)
C
I
0.01
0.1 1 10
DC
8sqcm 2oz Cu
One active die
Sing le Pu ls e, T
1s
100ms
=25°C
amb
10ms
1ms
100us
Collector Current (A)
-I
VCE Collector-Emitter Voltage (V)
NPN Safe Operating Area
Product Line o
Diodes Incorporated
V
CE(SAT)
Limited
1
DC
1s
100ms
10ms
0.1
8sqcm 2oz Cu
One active die
C
0.01
Single Pulse, T
0.1 1 10
amb
=25°C
-VCE Collector-Emitter Voltage (V)
PNP Safe Operating Area
ZXTC4591AMC
1ms
100us
8sqcm 2oz Cu
80
One active die
60
D=0.5
40
D=0.2
20
Thermal Resistance (°C/W)
0
100µ 1m 10m 100m 1 10 100 1k
Single Pulse
D=0.05
D=0.1
Pulse Width (s )
Transient Thermal Impedance
3.5
T
=25°C
amb
3.0
T
=150°C
j max
Continuous
2.5
2.0
2oz Cu
One a c tive die
1.5
1.0
Dissipation (W)
D
0.5
P
0.0
100m 1 10 100
Board Cu Area (sqcm)
2oz Cu
Two active die
1oz Cu
One active die
1oz Cu
Two active die
2.0
10sqcm 1oz Cu
Two active die
1.5
1.0
8sqcm 2oz Cu
One active die
10sqcm 1oz Cu
One active die
0.5
0.0
0 25 50 75 100 125 150
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
225
200
175
150
125
100
75
2oz Cu
Once a ctive die
50
25
Thermal Resistance (°C/W)
0
0.1 1 10 100
1oz Cu
One active die
1oz Cu
Two active die
2oz Cu
Two active die
Board Cu Area (sqcm)
Power Dissipation v Board Area
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
www.diodes.com
Thermal Resistance v Board A rea
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Diodes Incorporated
ZXTC4591AMC
NPN - Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 12)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 12)
Collector-Emitter Saturation Voltage (Note 12)
Base-Emitter Turn-On Voltage (Note 12)
Base-Emitter Saturation Voltage (Note 12)
Output Capacitance
Transition Frequency
Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
BV
BV
BV
I
I
I
V
CE(sat)
V
BE(on
V
BE(sat
C
CBO
CEO
EBO
CBO
EBO
CES
h
FE
obo
f
T
40 - - V
40 - - V
7 - - V
- - 100 nA
- - 100 nA
- - 100 nA
300
300
200
35
-
-
-
-
-
-
-
-
-
900
-
-
300
500
- - 1.0 V
- - 1.1 V
- - 10 pF
150 - - MHz
IC = 100µA
IC = 10mA
IE = 100µA
V
V
V
I
C
I
C
I
C
I
C
I
mV
C
I
C
IC = 1A, VCE= 5V
IC = 1A, IB= 100mA
V
V
f = 100MHz
= 30V
CB
= 4V
EB
= 30V
CE
= 1mA, V
= 500mA, V
CE
= 5V
CE
= 5V
= 1A, VCE = 5V
= 2A, VCE= 5V
= 0.5A, IB = 50mA
= 1A, IB= 100mA
= 10V, f = 1MHz
CB
= 10V, IC = 50mA,
CE
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
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ZXTC4591AMC
NPN - Typical Electrical Characteristics (@T
1
Tamb=25°C
IC/IB=100
100m
(V)
CE(SAT)
V
10m
1m 10m 100m 1
1200
1000
800
600
Gain
400
200
0
1m 10m 100m 1
IC/IB=50
IC/IB=10
IC/IB=20
IC Collector C urre nt (A)
V
CE(SAT)
100°C
25°C
-55°C
v I
150°C
C
IC Collector Curren t (A)
VCE=5V
= +25°C, unless otherwise specified.)
A
IC/IB=10
0.8
0.6
(V)
0.4
CE(SAT)
V
0.2
0.0
0123
IC Collector Curren t (A)
V
CE(SAT)
IC/IB=10
1.2
1.0
(V)
0.8
BE(SAT)
0.6
V
0.4
1m 10m 100m 1
25°C
IC Collector Curren t (A)
100°C
-55°C
150°C
v I
25°C
-55°C
C
100°C
150°C
1.2
1.0
0.8
VCE=5V
hFE v I
25°C
C
-55°C
V
BE(SAT)
v I
C
(V)
0.6
BE(ON)
V
0.4
0.2
1m 10m 100m 1
100°C
150°C
IC Collector Curren t (A)
V
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
BE(ON)
v I
C
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ZXTC4591AMC
PNP - Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 12)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 12)
Collector-Emitter Saturation Voltage (Note 12)
Base-Emitter Turn-On Voltage (Note 12)
Base-Emitter Saturation Voltage (Note 12)
Output Capacitance
Transition Frequency
Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
BV
BV
BV
I
I
I
h
V
CE(sat)
V
BE(on
V
BE(sat
C
CBO
CEO
EBO
CBO
EBO
CES
FE
obo
f
T
-40 - - V
-40 - - V
-7 - - V
- - -100 nA
- - -100 nA
- - -100 nA
300
300
250
160
30
-
-
-
-
-
-
-
-
-
-
-
-
800
-
-
-
-200
-350
-500
- - -1.0 V
- - -1.1 V
- - 10 pF
150 - - MHz
IC = -100µA
IC = -10mA
IE = -100µA
V
V
V
I
C
I
C
-
I
C
I
C
I
C
I
mV
C
I
C
I
C
IC = -1A, VCE= -5V
IC = -1A, IB= -50mA
V
V
f = 100MHz
= -30V
CB
= -4V
EB
= -30V
CE
= -1mA, V
CE
= -5V
= -100mA, VCE = -5V
= -500mA, VCE = -5V
= -1A, VCE = -5V
= -2A, VCE = -5V
= -0.1A, IB = -1mA
= -0.5A, IB = -20mA
= -1.0A, IB= -100mA
= -10V, f = 1MHz
CB
= -10V, IC = -50mA,
CE
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
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ZXTC4591AMC
PNP - Typical Electrical Characteristics (@T
1
Tamb=25°C
IC/IB=100
100m
(V)
CE(SAT)
-V
10m
1m 10m 100m 1
800
600
400
Gain
200
0
1m 10m 100m 1
IC/IB=50
IC/IB=20
IC/IB=10
-IC Collector Current (A)
V
CE(SAT)
150°C
100°C
25°C
-55°C
v I
C
-IC Collector Current (A)
VCE=5V
= +25°C, unless otherwise specified.)
A
1.5
IC/IB=10
1.0
(V)
0.5
CE(SAT)
-V
0.0
0.0 0.5 1.0 1.5 2.0 2.5
-IC Collector C urrent (A)
V
CE(SAT)
1.2
IC/IB=10
1.0
0.8
(V)
BE(SAT)
0.6
25°C
-V
0.4
1m 10m 100m 1
-IC Collector C urrent (A)
150°C
v I
-55°C
25°C
100°C
-55°C
C
100°C
150°C
1.0
0.8
VCE=5V
hFE v I
25°C
C
-55°C
V
BE(SAT)
v I
C
(V)
0.6
BE(ON)
-V
0.4
150°C
0.2
1m 10m 100m 1
100°C
-IC Collector Current (A)
V
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
BE(ON)
v I
C
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ZXTC4591AMC
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
A1
D
D4
E
L
D2
b
Z
D4
E2
e
A3
W-DFN3020-8
Type B
Dim Min Max Typ
A 0.77 0.83 0.80
A1 0 0.05 0.02
A3 - - 0.15
b 0.25 0.35 0.30
D 2.95 3.075 3.00
D2 0.82 1.02 0.92
D4 1.01 1.21 1.11
e - - 0.65
E 1.95 2.075 2.00
E2 0.43 0.63 0.53
L 0.25 0.35 0.30
Z - - 0.375
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
G
C
Y2
G1
X
Y1
Y
X1
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Dimensions Value (in mm)
C 0.650
G 0.285
G1 0.090
X 0.400
X1 1.120
Y 0.730
Y1 0.500
Y2 0.365
October 2012
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
Diodes Incorporated
ZXTC4591AMC
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
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