Diodes ZXTC4591AMC User Manual

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COMPLEMENTARY 40V HIGH PERFORMANCE TRANSISTOR

Features

NPN Transistor

• BV

• I

• Low Saturation Voltage (500mV max @ 1A)

• R

PNP Transistor

• BV

• I

• Low Saturation Voltage (-500mV max @ -1A)

• R

• h

FE

• Low profile 0.8mm high package for thin applications

• R

θJA

• 6mm

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP capable (Note 4)

Top View

> 40V

CEO

= 3A Continuous Collector Current

C

= 195mΩ for a low equivalent On-Resistance

SAT

> -40V

CEO

= -3A Continuous Collector Current

C

= 350mΩ for a low equivalent On-Resistance

SAT

characterized up to 2A for high current gain hold up

efficient, 40% lower than SOT26

2

footprint, 50% smaller than TSOP6 and SOT26

W-DFN3020-8

T

e B

B1

Bottom View

NPN Transistor

Mechanical Data

• Case: W-DFN3020-8 Type B

• Nominal package height: 0.8mm

• Case material: molded plastic. “Green” molding compound.

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - NiPdAu, Solderable per MIL-STD-202,

Method 208

• Weight: 0.013 grams (approximate)

Applications

• DC – DC Converters

• Charging circuits

• Power switches

• LED Backlighting circuits

• Motor control

• Portable applications

C

B2

PNP Transistor

Equivalent Circuit

Diodes Incorporated

e4

C2

C2 C2 C1 C1

2

E2 B2 E1 B1

ZXTC4591AMC

C1C2

Pin 1

Bottom View

Pin Out

Ordering Information (Note 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTC4591AMCTA AEC-Q101 91A 7 8 3,000

ZXTC4591AMCQTA Automotive 91A 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
<1000ppm antimony compounds.
the same, except where specified.

5. For packaging details, go to our website at http://www.diodes.com

Marking Information

ZXTC4591AMC

Document number: DS31925 Rev. 4 - 2

91A

www.diodes.com

91A = Product type marking code
Top view, dot denotes pin 1

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ZXTC4591AMC

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Parameter Symbol NPN PNP Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current

Continuous Collector Current
Base Current

V

CBO

V

CEO

V

EBO

I
(Notes 6 & 9)
(Notes 7 & 9) 2.5 -2

CM

I

I

C

B

40 -40
40 -40

V
7 -7
3 -3
2 -1.5

A

300 mA

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

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Characteristic Symbol NPN PNP Unit

1.5
12

2.45

19.6

1.13
8

1.7

13.6

83.3

W

mW/°C

°C/W

Power Dissipation
Linear Derating Factor

Thermal Resistance, Junction to Ambient

(Notes 6 & 9)
(Notes 7 & 9)

P

D

(Notes 8 & 9)
(Notes 8 & 10)

(Notes 6 & 9)
(Notes 7 & 9) 51.0
(Notes 8 & 9) 111

R

JA

θ

(Notes 8 & 10) 73.5
Thermal Resistance, Junction to Lead (Notes 9 & 11)
Operating and Storage Temperature Range

Notes: 6. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.

7. Same as note (6), except the device is measured at t <5 sec.

8. Same as note (6), except the device is surface mounted on 31mm x 31mm (10cm

9. For a dual device with one active die.

10. For dual device with 2 active die running at equal power.

11. Thermal resistance from junction to solder-point (on the exposed collector pad).

R

JL

T

, T

J

STG

2

) FR4 PCB with high coverage of single sided 1oz copper.

17.1

-55 to +150

°C

ZXTC4591AMC

Document number: DS31925 Rev. 4 - 2

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www.diodes.com

October 2012

© Diodes Incorporated

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Thermal Characteristics and Derating Information

V

CE(SAT)

Limited

1

0.1

Collector Current (A)

C

I

0.01

0.1 1 10

DC

8sqcm 2oz Cu
One active die

Sing le Pu ls e, T

1s

100ms

=25°C

amb

10ms

1ms

100us

Collector Current (A)

-I

VCE Collector-Emitter Voltage (V)

NPN Safe Operating Area

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Diodes Incorporated

V

CE(SAT)

Limited

1

DC

1s

100ms

10ms

0.1

8sqcm 2oz Cu
One active die

C

0.01

Single Pulse, T

0.1 1 10

amb

=25°C

-VCE Collector-Emitter Voltage (V)

PNP Safe Operating Area

ZXTC4591AMC

1ms

100us

8sqcm 2oz Cu

80

One active die

60

D=0.5

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s )

Transient Thermal Impedance

3.5

T

=25°C

amb

3.0

T

=150°C

j max

Continuous

2.5

2.0

2oz Cu
One a c tive die

1.5

1.0

Dissipation (W)

D

0.5

P

0.0
100m 1 10 100

Board Cu Area (sqcm)

2oz Cu
Two active die

1oz Cu
One active die

1oz Cu
Two active die

2.0

10sqcm 1oz Cu
Two active die

1.5

1.0

8sqcm 2oz Cu
One active die

10sqcm 1oz Cu
One active die

0.5

0.0
0 25 50 75 100 125 150

Max Power Dissipation (W)

Temperature (°C)

Derating Curve

225
200
175
150
125
100

75

2oz Cu
Once a ctive die

50
25

Thermal Resistance (°C/W)

0

0.1 1 10 100

1oz Cu
One active die

1oz Cu
Two active die

2oz Cu
Two active die

Board Cu Area (sqcm)

Power Dissipation v Board Area

ZXTC4591AMC

Document number: DS31925 Rev. 4 - 2

www.diodes.com

Thermal Resistance v Board A rea

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October 2012

© Diodes Incorporated