Diodes ZXTC2063E6 User Manual

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Features

• NPN + PNP combination

• BV

• BV

• I

• V

• R

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

> 40 (-40)V

CEO

> 6 (-3)V

ECO

= 9 (-9)A Peak Pulse Current

CM

< 60 (-90)mV @ 1A

CE(sat)

= 38 (58)mΩ

CE(sat)

Description

Advanced process capability has been used to achieve this high
performance device. Combining NPN and PNP transistors in the
SOT26 package provides a compact solution for the intended
applications.

SOT26

ADVANCE INFORMATION

B1

Top View

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ZXTC2063E6

40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26

Mechanical Data

• Case: SOT26

• Case Material: molded plastic, “Green” molding compound

• UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

• Weight: 0.015 grams (approximate)

Applications

• MOSFET and IGBT gate driving

• Motor drive

B2

mbol

Q2

C

1

B1

2

Top View

Pin-Out

C

Q1

Device S

E1

B2

E2

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTC2063E6TA 2063 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/ for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com

Marking Information

ZXTC2063E6

Document Number: DS33648 Rev: 3 - 2

2063

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2063 = Product Type Marking Code

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ZXTC2063E6

Maximum Ratings – Q1 (NPN Transistor) (@T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse blocking)
Emitter-Base Voltage
Continuous Collector Current
Peak Pulsed Collector Current
Base Current

Maximum Ratings – Q2 (PNP Transistor) (@T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse blocking)
Emitter-Base Voltage
Continuous Collector Current

ADVANCE INFORMATION

Peak Pulsed Collector Current
Base Current

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

= +25°C, unless otherwise specified.)

A

V

CBO

V

CEO

V

ECO

V

EBO

I

C

I

CM

I

B

= +25°C, unless otherwise specified.)

A

V

CBO

V

CEO

V

ECO

V

EBO

I

C

I

CM

I

B

130 V

3.5 A

-45 V

-40 V

40 V

6 V
7 V

9 A
1 A

-3 V

-7 V

-3 A

-9 A

-1 A

Characteristic Symbol Value Unit

0.7

5.6

0.9

7.2

1.1

8.8

1.1

8.8

1.7

13.6
179

W

mW/°C

Power Dissipation
Linear Derating Factor

(Notes 5 & 9)
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 8 & 9)

(Notes 5 & 9)

P

D

(Notes 6 & 9) 139

Thermal Resistance, Junction to Ambient

(Notes 6 & 10) 113
(Notes 7 & 9) 113

R

JA

θ

°C/W

(Notes 8 & 9) 73
Thermal Resistance, Junction to Lead (Note 11)
Operating and Storage Temperature Range

Notes: 5. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.

6. Same as note (5), except the device is surface mounted on 25mm x 25mm 1oz copper.

7. Same as note (5), except the device is surface mounted on 50mm x 50mm 2oz copper.

8. Same as note (7), except the device is measured at t < 5 seconds.

9. For device with one active die, both collectors attached to a common heatsink.

10. For device with two active dice running at equal power, split heatsink 50% to each collector.

11. Thermal resistance from junction to solder-point (at the end of the collector lead).

R

JL

T

, T

J

STG

87.58

-55 to +150

°C

ZXTC2063E6

Document Number: DS33648 Rev: 3 - 2

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Thermal Characteristics and Derating Information

V

CE(sat)

10

Limit

10

V

CE(sat)

Limit

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ZXTC2063E6

1

DC

1s

100ms

100m

Collector Current (A)

10m

C

I

NPN

T

=25°C

amb

50mm x 50mm 2oz FR4

One active die

10ms

1ms

100µs

100m 1 10

VCE Colle ctor-Emitter Voltag e ( V)

Safe Operating A rea

ADVANCE INFORMATION

110
100

90
80
70
60
50
40
30
20
10

0

D=0.5

D=0.2

D=0.1

D=0.05

Single Pulse

T

amb

50mm x 50mm 2oz FR4

One active die

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Pul se Width (s )

=25°C

Transient Thermal Impedance

1

DC

1s

100ms

100m

Collector Current (A)

10m

C

-I

0.1 1 10

PNP

T

=25°C

amb

50mm x 50mm 2oz FR4

One active die

10ms

1ms

-VCE Collec tor - Emi tte r Voltage (V)

Safe Operating Area

2.0

1.5

1.0

0.5

15mm x 15mm 1oz FR4

0.0

One active die

0 20 40 60 80 100 120 140 160

Max Power Dissi p ation (W)

50mm x 50mm 2oz FR4

One active die t<5secs

25mm x 25mm 1oz FR4

Two active die

50mm x 50mm 2oz FR4

One active die

25mm x 25mm 1oz FR4

Temperature (°C)

Derating Curve

100µs

One active die

100

Single Pulse

T

=25°C

amb

50mm x 50mm 2oz FR4

One active die

10

1

100µ 1m 10m 100m 1 10 100 1k

Max Power Dissi pa tion (W)

Pulse Power Dissipation

ZXTC2063E6

Document Number: DS33648 Rev: 3 - 2

Pulse Width (s)

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© Diodes Incorporated