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1
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1
2
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Features
• NPN + PNP combination
• BV
• BV
• I
• V
• R
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
> 40 (-40)V
CEO
> 6 (-3)V
ECO
= 9 (-9)A Peak Pulse Current
CM
< 60 (-90)mV @ 1A
CE(sat)
= 38 (58)mΩ
CE(sat)
Description
Advanced process capability has been used to achieve this high
performance device. Combining NPN and PNP transistors in the
SOT26 package provides a compact solution for the intended
applications.
SOT26
ADVANCE INFORMATION
B1
Top View
Product Line o
Diodes Incorporated
ZXTC2063E6
40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26
Mechanical Data
• Case: SOT26
• Case Material: molded plastic, “Green” molding compound
• UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight: 0.015 grams (approximate)
Applications
• MOSFET and IGBT gate driving
• Motor drive
B2
mbol
Q2
C
1
B1
2
Top View
Pin-Out
C
Q1
Device S
E1
B2
E2
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTC2063E6TA 2063 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/ for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
ZXTC2063E6
Document Number: DS33648 Rev: 3 - 2
2063
www.diodes.com
2063 = Product Type Marking Code
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ZXTC2063E6
Maximum Ratings – Q1 (NPN Transistor) (@T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse blocking)
Emitter-Base Voltage
Continuous Collector Current
Peak Pulsed Collector Current
Base Current
Maximum Ratings – Q2 (PNP Transistor) (@T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse blocking)
Emitter-Base Voltage
Continuous Collector Current
ADVANCE INFORMATION
Peak Pulsed Collector Current
Base Current
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
= +25°C, unless otherwise specified.)
A
V
CBO
V
CEO
V
ECO
V
EBO
I
C
I
CM
I
B
= +25°C, unless otherwise specified.)
A
V
CBO
V
CEO
V
ECO
V
EBO
I
C
I
CM
I
B
130 V
3.5 A
-45 V
-40 V
40 V
6 V
7 V
9 A
1 A
-3 V
-7 V
-3 A
-9 A
-1 A
Characteristic Symbol Value Unit
0.7
5.6
0.9
7.2
1.1
8.8
1.1
8.8
1.7
13.6
179
W
mW/°C
Power Dissipation
Linear Derating Factor
(Notes 5 & 9)
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 8 & 9)
(Notes 5 & 9)
P
D
(Notes 6 & 9) 139
Thermal Resistance, Junction to Ambient
(Notes 6 & 10) 113
(Notes 7 & 9) 113
R
JA
θ
°C/W
(Notes 8 & 9) 73
Thermal Resistance, Junction to Lead (Note 11)
Operating and Storage Temperature Range
Notes: 5. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
6. Same as note (5), except the device is surface mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except the device is surface mounted on 50mm x 50mm 2oz copper.
8. Same as note (7), except the device is measured at t < 5 seconds.
9. For device with one active die, both collectors attached to a common heatsink.
10. For device with two active dice running at equal power, split heatsink 50% to each collector.
11. Thermal resistance from junction to solder-point (at the end of the collector lead).
R
JL
T
, T
J
STG
87.58
-55 to +150
°C
ZXTC2063E6
Document Number: DS33648 Rev: 3 - 2
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Thermal Characteristics and Derating Information
V
CE(sat)
10
Limit
10
V
CE(sat)
Limit
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Diodes Incorporated
ZXTC2063E6
1
DC
1s
100ms
100m
Collector Current (A)
10m
C
I
NPN
T
=25°C
amb
50mm x 50mm 2oz FR4
One active die
10ms
1ms
100µs
100m 1 10
VCE Colle ctor-Emitter Voltag e ( V)
Safe Operating A rea
ADVANCE INFORMATION
110
100
90
80
70
60
50
40
30
20
10
0
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
T
amb
50mm x 50mm 2oz FR4
One active die
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Pul se Width (s )
=25°C
Transient Thermal Impedance
1
DC
1s
100ms
100m
Collector Current (A)
10m
C
-I
0.1 1 10
PNP
T
=25°C
amb
50mm x 50mm 2oz FR4
One active die
10ms
1ms
-VCE Collec tor - Emi tte r Voltage (V)
Safe Operating Area
2.0
1.5
1.0
0.5
15mm x 15mm 1oz FR4
0.0
One active die
0 20 40 60 80 100 120 140 160
Max Power Dissi p ation (W)
50mm x 50mm 2oz FR4
One active die t<5secs
25mm x 25mm 1oz FR4
Two active die
50mm x 50mm 2oz FR4
One active die
25mm x 25mm 1oz FR4
Temperature (°C)
Derating Curve
100µs
One active die
100
Single Pulse
T
=25°C
amb
50mm x 50mm 2oz FR4
One active die
10
1
100µ 1m 10m 100m 1 10 100 1k
Max Power Dissi pa tion (W)
Pulse Power Dissipation
ZXTC2063E6
Document Number: DS33648 Rev: 3 - 2
Pulse Width (s)
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ZXTC2063E6
Electrical Characteristics – Q1 (NPN Transistor) (@T
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 12)
Emitter-Base Breakdown Voltage
Emitter-collector breakdown voltage (reverse blocking)
Emitter-collector breakdown voltage (base open)
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 12)
DC Current Gain
Collector-Emitter Saturation Voltage
ADVANCE INFORMATION
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
Characteristic Symbol Min Typ Max Unit Test Condition
BV
CBO
BV
CEO
BV
EBO
BV
ECX
BV
ECO
I
CBO
I
⎯
EBO
h
FE
V
CE(sat)
V
BE(sat
V
BE(on
C
⎯
obo
f
⎯
T
t
⎯
d
t
⎯
t
⎯
s
t
⎯
f
130 170
40 63
7 8.3
6 7.4
6 7.4
⎯
300
280
40
⎯
⎯
⎯
= +25°C, unless otherwise specified.)
A
⎯
⎯
⎯
⎯
⎯
<1 50
20
<1 50 nA
60
50
85
900
60
110
220
195
450
400
150
135
960 1050 mV
860 950 mV
12 20 pF
190
64
108
428
130
⎯
⎯
⎯
⎯
⎯
V
IC = 100μA, IE = 0
V
IC = 10mA, IB = 0
V
IE = 100μA, IC = 0
=100µA, R
I
E
V
0.25V > V
V
IE = 100µA
nA
VCB = 100V
μA
V
= 100V, TA = +100°C
CB
VEB = 5.6V
I
= 10mA, VCE = 2V
C
⎯
I
= 1.0A, VCE = 2V
C
= 3.5A, VCE = 2V
I
C
I
= 1.0A, IB = 100mA
C
I
= 1.0A, IB = 20mA
C
mV
= 2.0A, IB = 40mA
I
C
I
= 3.5A, IB = 350mA
C
IC = 3.5A, IB = 350mA
IC = 3.5A, V
VCB = 10V, f = 1.0MHz
MHz
VCE = 10V, IC = 50mA, f = 100MHz
ns
ns
V
= 10V, IC = 1A, IB1 = IB2 = 10mA
CC
ns
ns
BC
> -0.25V
BC
= 2V
CE
< 1kΩ or
ZXTC2063E6
Document Number: DS33648 Rev: 3 - 2
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ZXTC2063E6
Electrical Characteristics – Q2 (PNP Transistor) (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 12)
Emitter-Base Breakdown Voltage
Emitter-collector breakdown voltage (reverse blocking)
Emitter-collector breakdown voltage (base open)
Collector Cutoff Current
Collector Cutoff Current
BV
BV
BV
BV
BV
I
CBO
I
EBO
CBO
CEO
EBO
ECX
ECO
-45 -80
-40 -65
-7 -8.3
-6 -7.4
-3 -8.7
⎯
<1 -50
⎯
⎯
<1 -50 nA
⎯
⎯
⎯
⎯
⎯
-20
V
IC = -100μA, IE = 0
V
IC = -10mA, IB = 0
V
IE = -100μA, IC = 0
-I
= 100µA, R
E
V
0.25V < V
V
IE = -100µA
nA
VCB = -36V
μA
V
CB
VEB = -5.6V
< 1kΩ or
BC
< -0.25V
BC
= -36V, TA = +100°C
ON CHARACTERISTICS (Note 12)
I
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
ADVANCE INFORMATION
Base-Emitter Turn-On Voltage
h
V
CE(sat)
V
BE(sat
V
BE(on
FE
300
200
20
⎯
⎯
⎯
⎯
⎯
50
-70
900
⎯
⎯
-90
-290
-260
⎯
mV
450
280
-195
-175
-935 -1000 mV
-855 -950 mV
= -10mA, VCE = -2V
C
= -1.0A, VCE = -2V
I
C
I
= -3.0A, VCE = -2V
C
I
= -1.0A, IB = -100mA
C
= -1.0A, IB = -20mA
I
C
I
= -3.0A, IB = -300mA
C
IC = -3.0A, IB = -300mA
IC = -3.0A, V
CE
= -2V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
C
⎯
obo
f
⎯
T
t
⎯
d
t
⎯
t
⎯
s
t
⎯
f
17 25 pF
270
57
69
154
60
⎯
⎯
⎯
⎯
⎯
MHz
ns
ns
ns
ns
VCB = -10V, f = 1.0MHz
VCE = -10V, IC = -50mA, f = 100MHz
V
= -10V, IC = -1A, IB1 = IB2 = -10mA
CC
ZXTC2063E6
Document Number: DS33648 Rev: 3 - 2
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ZXTC2063E6
Typical Electrical Characteristics – Q1 (NPN Transistor) (@T
1
Tamb=25°C
IC/IB=100
100m
(V)
10m
CE(SAT)
V
1m
1m 10m 100m 1 10
IC Collector Cu rre nt (A)
V
ADVANCE INFORMATION
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Normalised Gain
0.2
0.0
1m 10m 100m 1 10
CE(SAT)
150°C
100°C
25°C
-55°C
v I
C
IC Coll ector Cur r e nt (A)
IC/IB=20
IC/IB=10
VCE=2V
IC/IB=50
825
750
675
600
525
450
375
300
225
150
75
0
)
FE
(V)
V
Typical Gain (h
= +25°C, unless otherwise specified.)
A
0.7
IC/IB=10
0.6
0.5
0.4
(V)
0.3
CE(SAT)
0.2
V
0.1
0.0
10m 100m 1 10
150°C
100°C
25°C
IC Collector Current (A)
V
1.2
IC/IB=10
1.0
0.8
0.6
BE(SAT)
0.4
1m 10m 100m 1 10
CE(SAT)
25°C
v I
-55°C
C
100°C
150°C
IC Collector Current (A)
-55°C
1.0
0.8
VCE=2V
hFE v I
25°C
C
V
-55°C
BE(SAT)
v I
C
(V)
0.6
BE(ON)
V
0.4
0.2
1m 10m 100m 1 10
100°C
150°C
IC Coll ector Cur r e nt (A)
V
BE(ON)
v I
C
ZXTC2063E6
Document Number: DS33648 Rev: 3 - 2
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ZXTC2063E6
Typical Electrical Characteristics – Q2 (PNP Transistor) (@T
1
Tamb=25°C
IC/IB=100
100m
(V)
IC/IB=50
CE(SAT)
- V
10m
1m 10m 100m 1 10
IC/IB=20
IC/IB=10
- IC Collector Current (A)
V
CE(SAT)
v I
C
ADVANCE INFORMATION
1.6
150°C
1.4
100°C
1.2
1.0
25°C
0.8
0.6
-55°C
0.4
Normalised Gain
0.2
0.0
1m 10m 100m 1 10
VCE=2V
- IC Collector Curren t (A)
800
700
600
500
400
300
200
100
0
)
FE
(V)
- V
Typical Gain (h
= +25°C, unless otherwise specified.)
A
0.4
IC/IB=10
0.3
(V)
0.2
150°C
CE(SAT)
0.1
- V
0.0
10m 100m 1
100°C
-55°C
- IC Collector Current (A)
V
CE(SAT)
IC/IB=10
1.0
-55°C
0.8
0.6
BE(SAT)
0.4
1m 10m 100m 1 10
25°C
v I
C
150°C
100°C
- IC Collector Current (A)
25°C
hFE v I
1.2
VCE=2V
1.0
-55°C
0.8
(V)
BE(ON)
0.6
C
25°C
- V
0.4
1m 10m 100m 1 10
100°C
150°C
V
BE(SAT)
v I
C
- IC Collector Current (A)
V
ZXTC2063E6
Document Number: DS33648 Rev: 3 - 2
BE(ON)
v I
C
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
ADVANCE INFORMATION
K
J
A
B C
H
M
D
L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
G
Z
Y
X
C2
C2
C1
Product Line o
Diodes Incorporated
Dim Min Max Typ
Dimensions Value (in mm)
Z 3.20
G 1.60
X 0.55
Y 0.80
C1 2.40
C2 0.95
SOT26
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D
⎯ ⎯
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
0° 8°
α
All Dimensions in mm
0.95
⎯
ZXTC2063E6
ZXTC2063E6
Document Number: DS33648 Rev: 3 - 2
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the
final and determinative format released by Diodes Incorporated.
ADVANCE INFORMATION
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
Diodes Incorporated
ZXTC2063E6
ZXTC2063E6
Document Number: DS33648 Rev: 3 - 2
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