Diodes ZXTC2061E6 User Manual

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Features

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Diodes Incorporated

ZXTC2061E6

12V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26

Mechanical Data

• NPN + PNP Combination

• BV

• BV

• Continuous Collector Current I

• V

• R

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

> 12 (-12)V

CEO

> 7 (-7)V

EBO

< 32 (-70)mV @ 1A

CE(sat)

= 25 (45)mΩ

CE(sat)

= 5 (-3.5)A

C

Description

Advanced process capability has been used to achieve this high

performance device. Combining NPN and PNP transistors in the

SOT26 package provides a compact solution for the intended

applications.

ADVANCE INFORMATION

SOT26

B1

Q1

Top View

C

E1

Device S

• Case: SOT26

• Case Material: Molded Plastic, “Green” Molding Compound

• UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

• Weight: 0.015 grams (approximate)

Applications

• MOSFET and IGBT Gate Driving

• Motor Drive

B2

mbol

Q2

C2

1

B1

2

E2

Top View

Pin-Out

E1

B2

E2

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTC2061E6TA 2061 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/ for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com

Marking Information

ZXTC2061E6

Document Number: DS33646 Rev: 2 - 2

2061

www.diodes.com

2061 = Product Type Marking Code

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ZXTC2061E6

Maximum Ratings – Q1 (NPN Transistor) (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulsed Collector Current
Base Current

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

20 V
12 V

7 V
5 A

12 A

1 A

Maximum Ratings – Q2 (PNP Transistor) (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulsed Collector Current
Base Current

ADVANCE INFORMATION

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

-12 V

-12 V

-7 V

-3.5 A

-10 A

-1 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

0.7

5.6

0.9

7.2

1.1

8.8

1.1

8.8

1.7

13.6
179

Power Dissipation
Linear Derating Factor

(Notes 5 & 9)

(Notes 6 & 9)

(Notes 6 & 10)

(Notes 7 & 9)

(Notes 8 & 9)

(Notes 5 & 9)

P

D

(Notes 6 & 9) 139

Thermal Resistance, Junction to Ambient

(Notes 6 & 10) 113

R

θJA

(Notes 7 & 9) 113

(Notes 8 & 9) 73
Thermal Resistance, Junction to Lead (Note 11)
Operating and Storage Temperature Range

Notes: 5. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.

6. Same as note (5), except the device is surface mounted on 25mm x 25mm 1oz copper.

7. Same as note (5), except the device is surface mounted on 50mm x 50mm 2oz copper.

8. Same as note (7), except the device is measured at t < 5 seconds.

9. For device with one active die, both collectors attached to a common heatsink.

10. For device with two active dice running at equal power, split heatsink 50% to each collector.

11. Thermal resistance from junction to solder-point (at the end of the collector lead).

R

θJL

T

, T

J

STG

87.58

-55 to +150 °C

W

mW/°C

°C/W

ZXTC2061E6

Document Number: DS33646 Rev: 2 - 2

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Thermal Characteristics and Derating Information

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ZXTC2061E6

R

DS(on)

10

Limit

1

DC

1s

T

amb

NPN

=25°C

100ms

10ms

1ms

100µs

Collector Current (A)

-I

100m

50mm x 50mm 2oz FR4

Collector Current (A)
I

10m

C

One active die

100m 1 10

VCE Collector-Emitter Voltage (V)

Safe Operating Area

ADVANCE INFORMATION

110
100

90
80
70

D=0.5

60
50
40

D=0.2

30
20
10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

D=0.1

D=0.05

Single Pulse

Pulse Width (s)

T

=25°C

amb

50mm x 50mm 2oz FR4

One activ die

Transient Thermal Impedance

R

DS(on)

10

Limit

1

DC

1s

100ms

100m

50mm x 50mm 2oz FR4

10m

C

PNP

T

=25°C

amb

One active die

10ms

1ms

0.1 1 10

-VCE Collector-Emitter Voltage (V)

Safe Operating Area

2.0

1.5

1.0

0.5

15mm x 15mm 1oz FR4

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

50mm x 50mm 2oz FR4

One activ die, t < 5 sec

25mm x 25mm 1oz FR4

two activ die

50mm x 50mm 2oz FR4

One activ die

25mm x 25mm 1oz FR4

One activ die

Temperature (°C)

Derating Curve

100µs

One activ die

100

Single Pulse

T

=25°C

amb

50mm x 50mm

2oz FR4

One active die

10

1

100µ 1m 10m 100m 1 10 100 1k

Max Power Dissipation (W)

Pulse Width (s)

Pulse Power Dissipation

ZXTC2061E6

Document Number: DS33646 Rev: 2 - 2

3 of 9

www.diodes.com

February 2013

© Diodes Incorporated