Diodes ZXTC2045E6 User Manual
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Features
• NPN + PNP combination
• BV
• BV
• I
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP capable (Note 4)
> 30 (-30)V
CEO
> 40 (-40)V
CEV
= 5 (-5)A Peak Pulse Current
CM
Description
Advanced process capability has been used to achieve this high
performance device. Combining NPN and PNP transistors in the
SOT26 package provides a compact solution for the intended
applications.
SOT26
ADVANCE INFORMATION
B1
Top View
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Diodes Incorporated
ZXTC2045E6
30V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26
Mechanical Data
• Case: SOT26
• Case Material: molded plastic, “Green” molding compound
• UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight: 0.015 grams (approximate)
Applications
• MOSFET and IGBT gate driving
• Motor drive
B2
mbol
Q2
C
1
B1
2
Top View
Pin-Out
C
Q1
Device S
E1
B2
E2
Ordering Information (Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTC2045E6TA AEC-Q101 2045 7 8 3,000
ZXTC2045E6QTA Automotive 2045 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/ for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com
Marking Information
ZXTC2045E6
Document Number: DS33645 Rev: 2 - 2
2045
www.diodes.com
2045 = Product Type Marking Code
1 of 6
November 2012
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ZXTC2045E6
Maximum Ratings – Q1 (NPN Transistor) (@T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulsed Collector Current
Base Current
Maximum Ratings – Q2 (PNP Transistor) (@T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
ADVANCE INFORMATION
Peak Pulsed Collector Current
Base Current
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
= +25°C, unless otherwise specified.)
A
V
CBO
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
= +25°C, unless otherwise specified.)
A
V
CBO
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
1.5 A
-40 V
-40 V
-30 V
-1.5 A
40 V
40 V
30 V
7 V
5 A
1 A
-7 V
-5 A
-1 A
Characteristic Symbol Value Unit
0.7
5.6
0.9
7.2
1.1
8.8
1.1
8.8
1.7
13.6
179
W
mW/°C
Power Dissipation
Linear Derating Factor
(Notes 6 & 10)
(Notes 7 & 10)
(Notes 7 & 11)
(Notes 8 & 10)
(Notes 9 & 10)
(Notes 6 & 10)
P
D
(Notes 7 & 10) 139
Thermal Resistance, Junction to Ambient
(Notes 7 & 11) 113
(Notes 8 & 10) 113
R
JA
θ
°C/W
(Notes 9 & 10) 73
Thermal Resistance, Junction to Lead (Note 12)
Operating and Storage Temperature Range
Notes: 6. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Same as note (6), except the device is surface mounted on 25mm x 25mm 1oz copper.
8. Same as note (6), except the device is surface mounted on 50mm x 50mm 2oz copper.
9. Same as note (8), except the device is measured at t < 5 seconds.
10. For device with one active die, both collectors attached to a common heatsink.
11. For device with two active dice running at equal power, split heatsink 50% to each collector.
12. Thermal resistance from junction to solder-point (at the end of the collector lead).
R
JL
T
, T
J
STG
95.50
-55 to +150
°C
ZXTC2045E6
Document Number: DS33645 Rev: 2 - 2
2 of 6
www.diodes.com
November 2012
© Diodes Incorporated
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