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ZXT790AK
40V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK
SUMMARY
CEO
= -40V : R
BV
DESCRIPTION
Packaged in the D-Pak outline this high gain 40V PNP transistor offers low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
= 83m ; IC= -3A
SAT
FEATURES
3 Amps continuous current
•
Up to 6 Amps peak current
•
Low saturation voltages
•
High gain
•
APPLICATIONS
•
DC - DC Converters
•
MOSFET gate drivers
•
Charging circuits
•
Power switches
•
Siren drivers
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXT790AKTC 13" 16mm embossed 2500 units
TAPE WIDTH QUANTITY PER REEL
K
A
P
D
PINOUT
DEVICE MARKING
•
ZXT790A
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SEMICONDUCTORS
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ZXT790AK
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Collector-Base Voltage BV
Collector-Emitter Voltage BV
Emitter-Base Voltage BV
Continuous Collector Current I
Peak Pulse Current I
Base Current I
Power Dissipation at TA =25°C
(a)
CBO
CEO
EBO
C
CM
B
P
D
Linear Derating Factor
Thermal Resistance Junction to Ambient
Power Dissipation at TA =25°C
(b)
P
D
Linear Derating Factor
Thermal Resistance Junction to Ambient
Power Dissipation at TA =25°C
(c)
P
D
Linear Derating Factor
Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range T
j,Tstg
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions.
(b) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 1oz copper in still
air conditions.
(c) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper in still
air conditions.
-50 V
-40 V
-5 V
-3 A
-6 A
-0.5 A
2.1
16.8
59
mW/°C
°C/W
3.0
24.4
41
mW/°C
°C/W
3.9
30.9
32
mW/°C
°C/W
-55 to 150 °C
W
W
W
SEMICONDUCTORS
ISSUE 1 - JUNE 2003
2
Page 3
CHARACTERISTICS
ZXT790AK
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3
SEMICONDUCTORS
Page 4
ZXT790AK
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-Base Breakdown Voltage BV
Collector-Emitter Breakdown Voltage BV
Emitter-Base Breakdown Voltage BV
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation Voltage V
Base-Emitter Saturation Voltage V
Base-Emitter Turn-On Voltage V
Static Forward Current Transfer Ratio h
Transition Frequency f
CBO
CEO
EBO
CBO
S <1 -20 nA VCB= -30V
CE
EBO
CE(SAT)
BE(SAT)
BE(ON)
FE
T
-50 -70 V IC= -100A
-40 -60 V IC= -10mA
-5 -8.3 V IE= -100A
<1 -20 nA VCB= -30V
<1 -20 nA VEB= -4V
-110
-170
mV
IC= -0.5A, IB= -5mA
-220
-260
-250
-350
-450
-450
IC= -1A, IB= -10mA
mV
IC= -2A, IB= -50mA
mV
IC= -3A, IB= -300mA
mV
-1.05 -1.15 V IC= -3A, IB = -300mA
-0.9 -1.0 V IC= -3A, VCE = -2V
300
450
800 IC= -10mA, VCE= -2V
250
200
150
80
390
350
280
170
IC= -500mA, VCE= -2V
IC= -1A, VCE= -2V
IC= -2A, VCE= -2V
IC= -3A, VCE= -2V
100 MHz IC= -50mA, VCE= -5V
f = 50MHz
Output Capacitance C
Switching Times t
t
OBO
ON
OFF
24 pF VCB= -10V, f = 1MHz
35
600
nsnsIC= -500mA, VCC= -10V,
I
B1=IB2
= -50mA
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%.
SEMICONDUCTORS
4
ISSUE 1 - JUNE 2003
Page 5
TYPICAL CHARACTERISTICS
ZXT790AK
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SEMICONDUCTORS
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ZXT790AK
PACKAGE OUTLINE
Controlling dimensions are in millimetres.
Approximate conversions are given in inches
DIM MILLIMETRES INCHES
MIN MAX MIN MAX
A 2.18 2.38 0.086 0.094
A1 ᎏ 0.127 ᎏ 0.005
b 0.635 0.89 0.025 0.035
b2 0.762 1.114 0.030 0.045
b3 5.20 5.46 0.205 0.215
c 0.457 0.609 0.018 0.024
c2 0.457 0.584 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 5.20 ᎏ 0.205 ᎏ
E 6.35 6.73 0.250 0.265
E1 4.32 ᎏ 0.170 ᎏ
e 2.30 BSC 0.090 BSC
H 9.40 10.41 0.370 0.410
L 1.40 1.78 0.055 0.070
L1 2.74 REF 0.108 REF
L2 0.051 BSC 0.020 BSC
L3 0.89 1.27 0.035 0.050
L4 0.635 1.01 0.025 0.040
L5 1.14 1.52 0.045 0.060
⍜1⬚ 0ⴗ 10ⴗ 0ⴗ 10ⴗ
⍜⬚ 0ⴗ 15ⴗ 0ⴗ 15ⴗ
© Zetex plc 2003
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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ISSUE 1 - JUNE 2003
SEMICONDUCTORS
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