Diodes ZXT790AK User Manual
ZXT790AK
40V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK
SUMMARY
CEO
= -40V : R
BV
DESCRIPTION
Packaged in the D-Pak outline this high gain 40V PNP transistor offers low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
= 83m ; IC= -3A
SAT
FEATURES
3 Amps continuous current
•
Up to 6 Amps peak current
•
Low saturation voltages
•
High gain
•
APPLICATIONS
•
DC - DC Converters
•
MOSFET gate drivers
•
Charging circuits
•
Power switches
•
Siren drivers
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXT790AKTC 13" 16mm embossed 2500 units
TAPE WIDTH QUANTITY PER REEL
K
A
P
D
PINOUT
DEVICE MARKING
•
ZXT790A
ISSUE 1 - JUNE 2003
1
SEMICONDUCTORS
ZXT790AK
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Collector-Base Voltage BV
Collector-Emitter Voltage BV
Emitter-Base Voltage BV
Continuous Collector Current I
Peak Pulse Current I
Base Current I
Power Dissipation at TA =25°C
(a)
CBO
CEO
EBO
C
CM
B
P
D
Linear Derating Factor
Thermal Resistance Junction to Ambient
Power Dissipation at TA =25°C
(b)
P
D
Linear Derating Factor
Thermal Resistance Junction to Ambient
Power Dissipation at TA =25°C
(c)
P
D
Linear Derating Factor
Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range T
j,Tstg
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions.
(b) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 1oz copper in still
air conditions.
(c) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper in still
air conditions.
-50 V
-40 V
-5 V
-3 A
-6 A
-0.5 A
2.1
16.8
59
mW/°C
°C/W
3.0
24.4
41
mW/°C
°C/W
3.9
30.9
32
mW/°C
°C/W
-55 to 150 °C
W
W
W
SEMICONDUCTORS
ISSUE 1 - JUNE 2003
2
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