Diodes ZXT2MA User Manual

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Features and Benefits

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• Low Saturation Voltage (-220mV @ -1A)

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• 4mm

• Lead Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

> -20V

CEO

= -3.5A Continuous Collector Current

C

= 64 mΩ for a low equivalent On-Resistance

SAT

specified up to -6A for high current gain hold up

FE

efficient, 60% lower than SOT23

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footprint, 50% smaller than SOT23

Applications

• MOSFET Gate Driving

• DC-DC Converters

• Charging Circuits

• Power switches

• Motor Control

Top View

DFN322

Bottom View

Ordering Information (Note 3)

Product Line o

Diodes Incorporated

ZXT2MA

20V PNP LOW SATURATION SWITCHING TRANSISTOR

Mechanical Data

• Case: DFN322

• Case material: Molded Plastic. “Green” Molding Compound.

• Terminals: Matte Tin Finish.

• Nominal package height: 0.85mm

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Weight: 0.01 grams (approximate)

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Device Symbol

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Bottom View

Pin Out

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXT2MATA S2 7 8 3,000 ZXT2MATC S2 13 8 10,000

Notes: 1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

To

S2

View

ZXT2MA

Document Number: DS35302

Rev. 1 - 2

S2 = Product Type Marking code

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April 2011

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ZXT2MA

Maximum Ratings

Parameter Symbol Limit Unit

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Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current

Continuous Collector Current Base Current

Thermal Characteristics @T

Characteristic Symbol Value Unit

Power Dissipation Linear Derating Factor

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead (Note 6)

Operating and Storage Temperature Range

Notes: 4. For a device surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.

5. Same as note (4), except the device is measured at t < 5 sec.

6. Thermal resistance from junction to solder-point (at the end of the collector lead).

= 25°C unless otherwise specified

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ZXT2MA

Document Number: DS35302

Rev. 1 - 2

(Note 4) (Note 5) -4.0

(Note 4) (Note 5)

(Note 4) (Note 5) 51

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CBO CEO EBO CM

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-25 V

-20 V

-7.5 V

-6 A

-3.5

-1 A

1.5 12

2.45

19.6 83

16.8

-55 to +150

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W

mW/°C

°C/W °C/W

°C

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Thermal Characteristics

2.0

10

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V

CE(SAT)

Limited

1

0.1

Collector Current (A)

C

I

0.01

0.1 1 10

DC

1s

Single Pulse, T

100ms

amb

10ms

1ms

=25°C

VCE Collector-Emitter Voltage (V)

Safe Operating A rea

100us

1.5

1.0

0.5

0.0 0 25 50 75 100 125 150

Max Power Dissipation (W)

Temperature (°C)

Derating Curve

10 sqcm Single 1oz Cu T

=25°C

amb

ZXT2MA

10 sqcm

80

Single 1oz Cu

60

D=0.5

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

3.5

T

=25°C

amb

3.0

T

=150°C

j max

2.5

Continuous

2.0

1.5

1.0

Dissipation (W)

D

0.5

P

0.0

0.1 1 10 100

2oz copper

1oz copper

Board Cu Area (sqcm)

Power Dissipation v Bo ard A rea

225 200 175 150 125 100

75 50 25

Thermal Resistance (°C/W)

0

0.1 1 10 100

1oz copper

2oz copper

Board Cu Area (sqcm)

Thermal Resistance v B o ard Area

ZXT2MA

Document Number: DS35302

Rev. 1 - 2

www.diodes.com

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April 2011