Diodes ZHCS750 User Manual
Product Summary
V
RRM
(V)
40 0.75 0.49 100
I
O
(A)
V
F(MAX)
@ 0.75A
(V)
I
R(MAX)
Description and Applications
• DC – DC Converters
• Mobile Telecomms
• PCMIA
@ VR=30V
(µA)
ZHCS750
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features and Benefits
• High current capability (IF = 750mA)
• Low V
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
F
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Weight: 0.0089 grams (approximate)
Top View
Ordering Information (Note 4)
Device Packaging Shipping
ZHCS750TA SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZS7
ZS7 = Product Type Marking Code
ZHCS750
Document number: DS33218 Rev. 4 - 2
1 of 5
www.diodes.com
January 2014
© Diodes Incorporated
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Continuous Reverse Voltage
Continuous Forward Current
Forward Voltage @ IF = 750mA VF
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current
t ≤ 100μs
t ≤ 10ms
I
I
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation, TA = +25°C PD
Junction Temperature
Storage Temperature Range
T
J
T
STG
V
I
F
FAV
FSM
ZHCS750
R
40 V
750 mA
490 mV
1500 mA
12 A
5.2 A
500 mW
125 °C
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage
V
(BR)R
40 60 — V
— 225 280
— 235 310
— 290 350
Forward Voltage (Note 5)
V
F
— 340 420
mV
— 390 490
— 440 540
— 530 650
Reverse Current (Note 6)
Diode Capacitance
I
R
C
D
— 50 100 µA
— 25 — pF
Reverse Recovery Time Trr — 12 — ns
Notes: 5. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle ≤ 2%.
6. Short duration pulse test used to minimize self-heating effect.
IR = 300µA
= 50mA
I
F
I
= 100mA
F
I
= 250mA
F
I
= 500mA
F
I
= 750mA
F
I
= 1A
F
I
= 1.5A
F
VR = 30V
f = 1MHz, VR = 25V
Switched from I
= 500mA
I
R
Measured @ I
= 500mA to
F
= 50mA
R
ZHCS750
Document number: DS33218 Rev. 4 - 2
2 of 5
www.diodes.com
January 2014
© Diodes Incorporated
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