Diodes SBR1045D1 User Manual
A
Features
• Low Forward Voltage Drop
• Excellent High Temperature Stability
• Patented Super Barrier Rectifier Technology
• Soft, Fast Switching Capability
• Lead Free Finish, RoHS Compliant (Note 1)
• “Green” Molding Compound (No Br, Sb)
• Qualified to AEC-Q101 Standards for High Reliability
Top View Polarity
SBR1045D1
SUPER BARRIER RECTIFIER
Mechanical Data
• Case: TO252 (DPAK)
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.33 grams (approximate)
3
10A SBR
®
Ordering Information (Note 2)
Part Number Qualification Case Packaging
SBR1045D1-13 Commercial TO252 (DPAK) 2500/Tape & Reel, 13-inch
SBR1045D1Q-13 Automotive TO252 (DPAK) 2500/Tape & Reel, 13-inch
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
2. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SBR is a registered trademark of Diodes Incorporated.
SBR1045D1
Document number: DS31374 Rev. 7 - 2
SBR
1045
YYWW AB
SBR1045 = Product Type Marking Code
B = Foundry and Assembly Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 08 = 2008)
WW = Week (01 - 53)
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)
θ
(BR)
Maximum Ratings @T
= 25°C unless otherwise specified
A
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
V
V
V
V
R(RMS
Average Rectified Output Current @ TC = 140ºC IO
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Repetitive Peak Avalanche Power (1μs, 25ºC)
I
P
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance
Thermal Resistance Junction to Ambient (Note 3)
Thermal Resistance Junction to Case (Note 3)
Operating and Storage Temperature Range
R
R
, T
T
J
RRM
RWM
RM
FSM
ARM
θ
JA
JC
STG
SBR1045D1
45 V
32 V
10 A
90 A
5000 W
29
3
ºC/W
-65 to +150 ºC
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 4)
Forward Voltage Drop (per leg)
Leakage Current (Note 4)
Total Capacitance
Notes: 3. Device mounted on polymide substrate, 240mm2 Copper pad, double-sided PC Board.
4. Short duration pulse test used to minimize self-heating effect.
5. Device mounted on polymide substrate, 2” * 2” Copper pad, double-sided PC Board with minimum recommended pad layout.
V
R
V
F
I
R
C
T
45 - - V
-
-
-
-
-
-
0.42
0.37
-
0.50
50
12
0.48
0.41
0.58
0.56
500
40
V
μA
mA
- 400 - pF
IR = 0.45mA
I
= 5A, TJ = 25ºC
F
I
= 5A, TJ = 125ºC
F
= 10A, TJ = 25ºC
I
F
I
= 10A, TJ = 125ºC
F
= 45V, TJ = 25ºC
V
R
= 45V, TJ = 125ºC
V
R
= 5V, f = 1MHz
V
R
T
= 25ºC
J
SBR is a registered trademark of Diodes Incorporated.
SBR1045D1
Document number: DS31374 Rev. 7 - 2
2 of 5
www.diodes.com
June 2011
© Diodes Incorporated
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