DIODES SBL1030, SBL1060, SBL1035, SBL1040, SBL1045 Datasheet
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Features
Schottky Barrier Chip
·
Guard Ring Die Construction for
·
Transient Protection
Low Power Loss, High Efficiency
·
High Surge Capability
·
High Current Capability and Low Forward
·
Voltage Drop
For Use in Low Voltage, High Frequency
·
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
·
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
·
Terminals: Plated Leads Solderable per
·
MIL-STD-202, Method 208
· Polarity: See Diagram
· Weight: 2.24 grams (approx.)
· Mounting Position: Any
· Marking: Type Number
SBL1030 - SBL1060
10A SCHOTTKY BARRIER RECTIFIER
TO-220AC
L
B
C
K
Pin 1 Pin 2
J
R
Pin 1
Pin 2
D
E
N
Case
M
A
G
P
Dim Min Max
14.22 15.88
A
9.65 10.67
B
2.54 3.43
C
5.84 6.86
D
E
G
J
K
L
M
N
P
R
All Dimensions in mm
¾ 6.35
12.70 14.73
0.51 1.14
3.53Æ 4.09Æ
3.56 4.83
1.14 1.40
0.30 0.64
2.03 2.92
4.83 5.33
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
O
FM
qJc
SBL
1030
R
j
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @ TC= 95°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop @ IF= 10A, TC= 25°C
Peak Reverse Current @ TC= 25°C
at Rated DC Blocking Voltage @ T
Typical Junction Capacitance (Note 2)
Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
(Note 1)
= 100°C
C
V
V
V
R(RMS)
I
V
I
R
T
j,TSTG
RRM
RWM
V
I
FSM
RM
C
@ TA= 25°C unless otherwise specified
SBL
1035
30 35 40 45 50 60 V
21 24.5 28 31.5 35 42 V
SBL
1040
0.60 0.75 V
-65 to +150 °C
SBL
1045
10 A
250 A
1.0
50
700 pF
3.5 °C/W
SBL
1050
SBL
1060
Unit
mA
DS23042 Rev. C-2 1 of 2 SBL1030 - SBL1060
100
g
300
g
000
g
100
g
16
20
g
12
10
SBL1030CT - SBL10450CT
8
4
(AV)
I , AVERAGE FORWARD CURRENT (A)
0
0 50 100 150
T , CASE TEMPERATURE ( C)
C
Fi
. 1 Forward Current DeratingCurve
8.3 ms single half-sine-wave
JEDEC method
250
200
150
100
50
SBL1050CT - SBL1060CT
1.0
T = 25 C
°
j
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.1
Pulse width = 300 s
2% duty cycle
µ
0.2 0.4 0.6 0.8
°
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fi
.2 Typical Forward Characteristics
4
T = 25 Cj°
1000
j
C , CAPACITANCE (pF)
FSM
I , PEAK FORWARD SURGE CURRENT (A)
0
1 10 100
NUMBER OF CYCLES AT 60Hz
. 3 Max Non-Repetitive Surge Current
Fi
10
1.0
0.1
R
I , INSTANTANEOUS REVERSE CURRENT (mA)
0.01
0 40 80 120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
100
0.1 1.0 10 100
Fi
.4 Typical Junction Capacitance per Element
T = 100 Cj°
T = 75 Cj°
T = 25 Cj°
.5 Typical Reverse Characteristics
Fi
V , REVERSE VOLTAGE (V)
R
DS23042 Rev. C-2 2 of 2 SBL1030 - SBL1060
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