Diodes SBG3030CT, SBG3045CT User Manual

Features
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 250A Peak
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish/RoHS Compliant Version (Note 1)
Top View
SBG3030CT - SBG3045CT
30A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Mechanical Data
Case: TO-263
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Tin. Solderable per MIL-STD-202, Method
208
Polarity: See Diagram
Weight: 1.7 grams (approximate)
PIN 1 PIN 3
Polarity
PIN 2 & 4
Ordering Information (Note 2)
Part Number Case Packaging
SBG3030CT-T-F SBG3040CT-T-F SBG3045CT-T-F
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes
2. For packaging details, go to our website at http://www.diodes.com.
TO-263 TO-263 TO-263
800/Tape & Reel, 13-inch 800/Tape & Reel, 13-inch 800/Tape & Reel, 13-inch
Marking Information
SBG3030CT - SBG3045CT
Document number: DS30025 Rev. 8 - 2
SBG30xxCT = Product Type Marking Code Where xx = 30, 40, or 45 Depending on Device Type
= Manufacturers’ Code Marking YWW = Date Code Marking Y = Last Digit of Year (ex: 2 for 2002) WW = Week Code (01 - 53)
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© Diodes Incorporated
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θ
R
GE R
C
TIF
C
U
R
R
T
N
TAN
T
N
O
US F
O
R
RD CUR
REN
T
Maximum Ratings @T
= 25°C unless otherwise specified
A
Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage (Note 3)
RMS Reverse Voltage
V
V
V
R(RMS
RRM RWM
V
R
SBG
3030CT
30 40 45 V
21 28 32 V
Average Rectified Output Current @ TC = 100°C IO Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
I
FSM
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Case (Note 4) Operating Temperature Range TJ -55 to +125 Storage Temperature Range
R
T
STG
JC
SBG3030CT - SBG3045CT
SBG
3040CT
30 A
250 A
1.5 °C/W
-55 to +150
SBG
3045CT
Unit
°C °C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Forward Voltage, per Element @ IF = 15A, TC = 25°C VFM Peak Reverse Current @ TJ = 25°C at Rated DC Blocking Voltage (Note 3) @ T
= 100°C
J
Typical Total Capacitance (Note 5)
Notes: 3. Short duration pulse test used to minimize self-heating effect.
4. Thermal resistance junction to case mounted on heatsink.
5. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC and per element.
I
RM
C
T
0.55 V
1.0 75
mA
420 pF
(A) EN
30
Total Package
24
100
(A)
T = 25CJ°
10
18
IED
E
12
A
(AV)
I, AVE
6
0
0
Per Element
50
T , CASE TEMPERATURE ( C)
C
100
°
150
WA
1.0
E A
PULSE WIDTH 2% Duty Cycle
S
0.1
F
I, I
0.1 0.5 0.7 0.9 1.1
0.3
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forwar d C haracteristics, Pe r E l em ent
Fig. 1 Forward Derating Curve
SBG3030CT - SBG3045CT
Document number: DS30025 Rev. 8 - 2
2 of 5
www.diodes.com
July 2011
© Diodes Incorporated
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