DIODES SB110, SB170, SB180, SB190 Datasheet
DS30116 Rev. B-1 1 of 2 SB170 - SB1100
SB170 - SB1100
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
Maximum Ratings and Electrical Characteristics
@ TA= 25°C unless otherwise specified
·
Schottky Barrier Chip
·
Guard Ring Die Construction for
Transient Protection
·
Ideally Suited for Automatic Assembly
·
Low Power Loss, High Efficiency
·
Surge Overload Rating to 25A Peak
·
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
·
High Temperature Soldering:
260°C/10 Second at Terminal
·
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
·
Case: Molded Plastic
· Terminals: Plated Leads Solderable per MIL-STD-202, Method 208
· Polarity: Cathode Band
· Weight: 0.3 grams (approx.)
· Mounting Position: Any
· Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
A
A
B
C
D
Characteristic Symbol SB170 SB180 SB190 SB1100 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
70 80 90 100 V
RMS Reverse Voltage
V
R(RMS)
49 56 63 70 V
Average Rectified Output Current @ TT= 85°C
I
O
1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
25 A
Forward Voltage @ IF= 1.0A @ TA= 25°C
V
FM
0.80 V
Peak Reverse Current @ TA= 25°C
at Rated DC Blocking Voltage @ T
A
= 100°C
I
RM
0.5
10
mA
Typical Junction Capacitance (Note 2)
C
j
80 pF
Typical Thermal Resistance Junction to Lead
R
qJL
15 K/W
Typical Thermal Resistance Junction to Ambient (Note 1)
R
qJA
50 K/W
Operating and Storage Temperature Range
T
j,TSTG
-65 to +125 °C
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DO-41
Dim Min Max
A
25.4 ¾
B
4.1 5.2
C
0.71 0.86
D
2.0 2.7
All Dimensions in mm
NEW PRODUCT
NEW PRODUCT
DS30116 Rev. B-1 2 of 2 SB170 - SB1100
0.1
1.0
10
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fi
g
.2 Typical Forward Characteristics
F
20
0.50.1 0.9 1.3 1.7 2.1
T = 25 Cj°
I Pulse Width = 300 sFµ
10
20
30
4
0
0
1 10 100
I , PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fi
g
. 3 Max Non-Repetitive Peak Fwd Surge Current
Single Half Sine-Wave
(JEDEC Method)
T = 150 Cj°
10
100
1000
0.1 1 10 100
C , JUNCTI
O
N CAP
ACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T = 25 C
f = 1.0MHz
j
°
0
0.5
1.0
25 50 75 100 125 150
I AVERAGE FORWARD CURRENT (A)
(O),
T , LEAD TEMPERATURE ( C)
Fi
g
. 1 Forward Current DeratingCurve
L
°
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