DIODES MMBTA92 Datasheet

Features

MMBTA92

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

· Epitaxial Planar Die Construction

· Complementary NPN Type Available

(MMBTA42)

· Ideal for Medium Power Amplification and
Switching

Mechanical Data

· Case: SOT-23, Molded Plastic

· Case material - UL Flammability Rating

Classification 94V-0

· Moisture sensitivity: Level 1 per J-STD-020A

· Terminals: Solderable per MIL-STD-202,

Method 208

· Terminal Connections: See Diagram

· Marking (See Page 2): K3R

· Ordering & Date Code Information: See Page 2

· Weight: 0.008 grams (approx.)

Maximum Ratings

Characteristic Symbol MMBTA92 Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (Note 1) (Note 3)

Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

@ TA= 25°C unless otherwise specified

E

B

B

C

TOP VIEW

G

H

V

CBO

V

CEO

V

EBO

I

C

P

R

qJA

Tj,T

C

d

STG

SOT-23

A

B

C

E

D

K

J

L

E

M

Dim Min Max

A

0.37 0.51

B

1.20 1.40

C

2.30 2.50

D

0.89 1.03

E

0.45 0.60

G

1.78 2.05

H

2.80 3.00

J

0.013 0.10

K

0.903 1.10

L

0.45 0.61

M

0.085 0.180

a

0° 8°

All Dimensions in mm

-300 V

-300 V

-5.0 V

-500 mA

300

mW

417 °C/W

-55 to +150 °C

Electrical Characteristics

@ TA = 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Collector Cutoff Current

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

-300 ¾ V

-300 ¾ V

-5.0 ¾ V

¾ -250 nA

¾ -100 nA

= -100mA, IE = 0

I

C

= -1.0mA, IB = 0

I

C

= -100mA, IC = 0

I

E

VCB = -200V, IE= 0

VCE= -3.0V, IC = 0

ON CHARACTERISTICS (Note 2)

= -1.0mA, VCE = -10V

DC Current Gain

Collector-Emitter Saturation Voltage

Base- Emitter Saturation Voltage

h

V

CE(SAT)

V

BE(SAT)

25

FE

40
25

¾¾

¾ -0.5 V

¾ -0.9 V

I

C

IC = -10mA, VCE = -10V
IC = -30mA, VCE= -10V

I

= -20mA, IB = -2.0mA

C

= -20mA, IB = -2.0mA

I

C

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Current Gain-Bandwidth Product

C

cb

f

T

¾ 6.0 pF

50 ¾ MHz

VCB = -20V, f = 1.0MHz, IE = 0

VCE = -20V, IC = -10mA,
f = 100MHz

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance

rating (R

), power dissipation rating (Pd) and power derating curve (figure 1).

qJA

DS30060 Rev. 5 - 2 1 of 2 MMBTA92

www.diodes.com

p

Ordering Information

(Note 4)

Device

MMBTA92-7

Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Packaging Shipping

SOT-23 3000/Tape & Reel

Marking Information

K3R = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002

YM

M = Month ex: 9 = September

2005 2006 2007 2008 2009

ST U VW

Aug Sep Oct Nov Dec

89 O ND

Date Code Key

Year 1998 1999 2000 2001 2002 2003 2004

Code

Month Jan Feb March Apr May Jun Jul

Code

K3R

JKLMNPR

1234567

D

P , POWER DISSIPATION (mW)

350

300

250

200

150

100

50

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

Fig. 1, Max Power Dissipation vs

100 125

75

Ambient Tem

150

erature

175

200

DS30060 Rev. 5 - 2 2 of 2 MMBTA92

www.diodes.com