Diodes MMBTA92 User Manual

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Features

• Epitaxial Planar Die Construction

• Complementary NPN Types Available (MMBTA42)

• Ideal for Medium Power Amplification and Switching

• Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 4 and 5)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe).

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.008 grams (approximate)

MMBTA92

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

B

C

SOT-23

Dim Min Max

A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03

E 0.45 0.60

K

J

L

M

G 1.78 2.05
H 2.80 3.00

J 0.013 0.10

K 0.903 1.10

L 0.45 0.61

M 0.085 0.180

α

0° 8°

All Dimensions in mm

E

B

B

C

TOP VIEW

G
H

C

A

E

D

E

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current (Note 1) (Note 3) IC -500 mA
Power Dissipation (Note 1) Pd 300 mW
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range Tj, T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage V
Collector-Emitter Breakdown Voltage V
Emitter-Base Breakdown Voltage V
Collector Cutoff Current I
Collector Cutoff Current I

ON CHARACTERISTICS (Note 2)

DC Current Gain hFE
Collector-Emitter Saturation Voltage V

Base- Emitter Saturation Voltage V

SMALL SIGNAL CHARACTERISTICS

Output Capacitance Ccb
Current Gain-Bandwidth Product fT 50

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

2. Short duration pulse test used to minimize self-heating effect.

3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

rating (R

4. No purposefully added lead. Halogen and Antimony Free.

5. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code

), power dissipation rating (Pd) and power derating curve (figure 1).

θJA

V9 are built with Non-Green Molding Compound and may contain Halogens or Sb

DS30060 Rev. 11 - 2 1 of 3

CBO
CEO
EBO

R

-300

(BR)CBO

-300

(BR)CEO

-5.0

(BR)EBO

CBO
EBO

CE(SAT)
BE(SAT)

www.diodes.com

-300 V

-300 V

-5.0 V

θJA

-55 to +150

STG

⎯
⎯

25
40
25

⎯
⎯

⎯

Fire Retardants.

2O3

417

V

⎯
⎯
⎯

IC = -100μA, IE = 0
V IC = -1.0mA, IB = 0
V

IE = -100μA, IC = 0

-250 nA VCB = -200V, IE = 0

-100 nA V

= -3.0V, IC = 0

CE

IC = -1.0mA, VCE = -10V

⎯ ⎯

IC = -10mA, VCE = -10V

IC = -30mA, V

-0.5 V IC = -20mA, IB = -2.0mA

-0.9 V IC = -20mA, IB = -2.0mA

6.0 pF
⎯

MHz

VCB = -20V, f = 1.0MHz,
IE = 0
VCE = -20V, IC = -10mA,
f = 100MHz

°C/W

°C

= -10V

CE

MMBTA92

© Diodes Incorporated

C

O

CTO

R TO EM

R

P, P

O

E

R

S

SIPATIO

C CUR

RENT G

T

TER VOLTAG

GAIN

N

T

H

PRODU

C

T

H

ITTE

LLE

CE(SAT)

V,

1.0

0.9

0.8

I
I

C
B

= 10

0.7

0.6

0.5

0.4

0.3

0.2

0.1

SATURATION V OLTAGE (V)

1.0

0.9

E (V)

0.8

0.7

0.6

0.5

0.4

0.3

BE(ON)

V , BASE EM I

0.2

0.1

T=150°C

A

T= 25°C

A

T= -50°C

0

1

Fig. 2, Collector Emitter Saturation Voltage

V= 5V

CE

0.1

10

I , COLLECTOR CURRENT (mA)

C

vs. Collector Current

T= 25°C

A

T = 150°C

A

110

I , COLLECTOR CURRENT (mA)

C

A

100

T= -50°C

A

Fig. 4, Base Emitter Voltage vs Collector Current

1000

100

N (mW)

DI
W

D

10,000

1,000

AIN

100

FE

h, D

10

100

z)

350

300

250

200

150

100

50

0

0

T = -50°C

1

1

25 50

T , AMBIENT TEMPERATURE (°C)

V= 5V

CE

A

75 100 125

A

Fig. 1, Max Power Dissipation vs

Ambient Temperature

T= 25°C

A

10 1000

I , COLLECTOR CURRENT (mA)

C

Fig. 3, DC Current Gain vs

Collector Current

V= 5V

CE

Note 1

150

T= 150°C

A

100

175

200

(M

10

DWID
BA

T

f,

1

1

I , COLLECTOR CURRENT (mA)

C

10

Fig. 5, Ga in Bandwidt h Product vs

Collector Curr ent

DS30060 Rev. 11 - 2 2 of 3

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MMBTA92

© Diodes Incorporated