Diodes MMBTA64 User Manual
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Features
• Epitaxial Planar Die Construction
• Complementary NPN Types Available
(MMBTA13 /MMBTA14)
• Ideal for Low Power Amplification and Switching
• High Current Gain
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). Terminal Connections: See Diagram
• MMBTA63 Marking K2E, K3E See Page 3
• MMBTA64 Marking K3E See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.008 grams (approximate)
MMBTA63 / MMBTA64
PNP SURFACE MOUNT DARLINGTON TRANSISTOR
A
C
TOP VIEW
BE
E
D
G
H
J
D
C
B
E
B
C
K
L
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
M
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α
0° 8°
All Dimensions in mm
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics @T
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain MMBTA63
MMBTA64
MMBTA63
MMBTA64
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
DS30055 Rev. 8 - 2
2. Short duration pulse test used to minimize self-heating effect
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
= 25°C unless otherwise specified
A
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
IC
PD
R
JA
θ
TJ, T
STG
V
(BR)CEO
I
CBO
I
EBO
5,000
hFE
10,000
10,000
20,000
V
CE(SAT)
V
BE(SAT)
fT
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-30
⎯
⎯
⎯
⎯
125
-55 to +150
⎯
-100 nA
-100 nA
⎯ ⎯
-1.5 V
-2.0 V
⎯
Fire Retardants.
2O3
-30 V
-30 V
-10 V
-500 mA
300 mW
417
V
IC = -100μA VBE = 0V
VCB = -30V, IE = 0
V
= -10V, IC = 0
EB
IC = -10mA, VCE = -5.0V
IC = -10mA, V
= -5.0V
CE
IC = -100mA, VCE = -5.0V
IC = -100mA, V
= -5.0V
CE
IC = -100mA, IB = -100μA
IC = -100mA, VCE = -5.0V
VCE = -5.0V, IC = -10mA,
MHz
f = 100MHz
MMBTA63 / MMBTA64
© Diodes Incorporated
°C/W
°C
P, P
OWER
P
T
O
C
O
CTO
R
T
O
T
TER
C CUR
REN
T GAIN
T
TER VOLTAG
G
T
H
P
R
ODUCT
H
400
350
300
N (mW )
I
250
A
200
DISSI
150
100
D
50
0
Fig. 1, Max Power Dissipation vs. Ambient Temperature
10,000,000
1,000,000
100,000
10,000
FE
h, D
1,000
100
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
150
110100
I , COLLECTOR CURRENT (mA)
C
Fig. 3, DC Current Gain vs. Collector Current
200
175
1,000
1.20
1.15
1.10
1.05
1.00
0.95
EMI
0.90
0.85
0.80
0.75
LLE
0.70
0.65
0.60
SATURATION VOLTAGE (V)
0.55
CE(SAT)
V,
0.50
0.45
0.40
1
Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
10 100
I , COLLECTOR CURRENT (mA)
C
1,000
1.6
1.5
1.4
E (V)
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
BE(ON)
V, BASE EMI
0.3
0.2
0.1
0.1
Fig. 4, Base Emitter Voltage vs. Collector Current
110
I , COLLECTOR CURRENT (mA)
C
100
1,000
z)
(M
100
10
AIN BANDWID
T
f,
1
1
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Gain Bandwidth Product vs. Collector Current
DS30055 Rev. 8 - 2
10
100
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MMBTA63 / MMBTA64
© Diodes Incorporated
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