Diodes MMBTA56 User Manual

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MMBTA55 / MMBTA56

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Complementary NPN Types Available (MMBTA05 /

MMBTA06)

• Ideal for Low Power Amplification and Switching

• Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 3 and 4)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020d

• Terminal Connections: See Diagram

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy

42 leadframe).

• MMBTA55 Marking (See Page 3): K2H, K2G

• MMBTA56 Marking (See Page 3): K2G

• Ordering Information: See Page 3

• Weight: 0.008 grams (approximate)

Maximum Ratings @T

Characteristic Symbol MMBTA55 MMBTA56 Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

= 25°C unless otherwise specified

A

A

C

TOP VIEW

BE

E

D

G
H

J

C

B

V

CBO

V

CEO

V

EBO

IC
Pd

R

JA

θ

Tj, T

STG

B

C

K

L

E

M

-60 -80 V

-60 -80 V

-4.0 V

-500 mA
300 mW
417

-55 to +150

SOT-23

Dim Min Max

A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α

0° 8°

All Dimensions in mm

°C/W

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage MMBTA55
MMBTA56
Collector-Emitter Breakdown Voltage MMBTA55
MMBTA56

Emitter-Base Breakdown Voltage
Collector Cutoff Current MMBTA55

MMBTA56
Collector Cutoff Current MMBTA55

MMBTA56

ON CHARACTERISTICS (Note 2)

DC Current Gain
Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead. Halogen and Antimony Free.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb

DS30054 Rev. 11 - 2 1 of 3

V
V

V

(BR)CBO

(BR)CEO

(BR)EBO

I

CBO

I

CEX

hFE

V

CE(SAT)

V

BE(SAT)

fT

www.diodes.com

-60

-80

-60

-80

-4.0

⎯

⎯

100

⎯
⎯

50

Fire Retardants.

2O3

⎯
⎯

⎯

-100 nA

-100 nA

⎯ ⎯

-0.25 V

-1.2 V

⎯

MHz

V

IC = -100μA, IE = 0

V

IC = -1.0mA, IB = 0

V

IE = -100μA, IC = 0
VCB = -60V, IE = 0
VCB = -80V, IE = 0
V

= -60V, IBO = 0V

CE

V

= -80V, IBO = 0V

CE

IC = -10mA, VCE = -1.0V
IC = -100mA, V
IC = -100mA, IB = -10mA
IC = -100mA, VCE = -1.0V

VCE = -1.0V, IC = -100mA,
f = 100MHz

= -1.0V

CE

MMBTA55 / MMBTA56

© Diodes Incorporated

P

P

OWER

P

T

O

C

O

CTO

R

T

O

T

TER

C CUR

REN

T GAIN

T

TER VOLTAG

G

N

N

T

H PRODUCT

H

400

Note 1

350

300

N (mW)
I

250

A

200

DISSI

150

,

100

D

50

EMI

LLE

CE(SAT)

V,

SATURATION VOLTAGE (V)

0.25

0.20

0.15

0.10

0.05

I

C

= 10

I

B

T= 25°C

A

T = 150°C

A

T = -50°C

A

1,000

100

FE

h, D

10

100

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75

100 125

Fig. 1 Max Power Dissipation vs

Ambie nt Temper at ure

V= 5V

CE

T= 25°C

A

1

I , COLLECTOR CURRENT (mA)

C

10

T = -50°C

A

100

Fig. 3 DC Current Gain vs. Collector Current

175

150

T = 150°C

A

200

1,000

0

110

I , COLLECTOR CURRENT (mA)

C

100

1,000

Fig. 2 Collector Emitter Saturation Voltage

vs. Collector Current

1.0

0.9

E (V)

0.8

0.7

0.6

V= 5V

CE

T= -50°C

A

T= 25°C

A

0.5

0.4
T = 150°C

0.3

BE(ON)

V , BASE EMI

0.2

A

0.1

10.1

I , COLLECTOR CURRENT (mA)

C

Fig. 4 Base Emitter Voltage vs. Collector Current

10 100

z)
(M

V= 5V

CE

10

DWID

-BA
AI

T

f,

1

110

I , COLLECTOR CURRENT (mA)

C

Fig. 5 Gain-Bandwidth Product vs. Collector Current

DS30054 Rev. 11 - 2 2 of 3

100

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MMBTA55 / MMBTA56

© Diodes Incorporated