Diodes MMBTA56 User Manual

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MMBTA55 / MMBTA56

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Complementary NPN Types Available (MMBTA05 /

MMBTA06)

• Ideal for Low Power Amplification and Switching

• Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 3 and 4)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020d

• Terminal Connections: See Diagram

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy

42 leadframe).

• MMBTA55 Marking (See Page 3): K2H, K2G

• MMBTA56 Marking (See Page 3): K2G

• Ordering Information: See Page 3

• Weight: 0.008 grams (approximate)

Maximum Ratings @T

Characteristic Symbol MMBTA55 MMBTA56 Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

= 25°C unless otherwise specified

A

A

C

TOP VIEW

BE

E

D

G
H

J

C

B

V

CBO

V

CEO

V

EBO

IC
Pd

R

JA

θ

Tj, T

STG

B

C

K

L

E

M

-60 -80 V

-60 -80 V

-4.0 V

-500 mA
300 mW
417

-55 to +150

SOT-23

Dim Min Max

A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α

0° 8°

All Dimensions in mm

°C/W

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage MMBTA55
MMBTA56
Collector-Emitter Breakdown Voltage MMBTA55
MMBTA56

Emitter-Base Breakdown Voltage
Collector Cutoff Current MMBTA55

MMBTA56
Collector Cutoff Current MMBTA55

MMBTA56

ON CHARACTERISTICS (Note 2)

DC Current Gain
Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead. Halogen and Antimony Free.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb

DS30054 Rev. 11 - 2 1 of 3

V
V

V

(BR)CBO

(BR)CEO

(BR)EBO

I

CBO

I

CEX

hFE

V

CE(SAT)

V

BE(SAT)

fT

www.diodes.com

-60

-80

-60

-80

-4.0

⎯

⎯

100

⎯
⎯

50

Fire Retardants.

2O3

⎯
⎯

⎯

-100 nA

-100 nA

⎯ ⎯

-0.25 V

-1.2 V

⎯

MHz

V

IC = -100μA, IE = 0

V

IC = -1.0mA, IB = 0

V

IE = -100μA, IC = 0
VCB = -60V, IE = 0
VCB = -80V, IE = 0
V

= -60V, IBO = 0V

CE

V

= -80V, IBO = 0V

CE

IC = -10mA, VCE = -1.0V
IC = -100mA, V
IC = -100mA, IB = -10mA
IC = -100mA, VCE = -1.0V

VCE = -1.0V, IC = -100mA,
f = 100MHz

= -1.0V

CE

MMBTA55 / MMBTA56

© Diodes Incorporated

P

P

OWER

P

T

O

C

O

CTO

R

T

O

T

TER

C CUR

REN

T GAIN

T

TER VOLTAG

G

N

N

T

H PRODUCT

H

400

Note 1

350

300

N (mW)
I

250

A

200

DISSI

150

,

100

D

50

EMI

LLE

CE(SAT)

V,

SATURATION VOLTAGE (V)

0.25

0.20

0.15

0.10

0.05

I

C

= 10

I

B

T= 25°C

A

T = 150°C

A

T = -50°C

A

1,000

100

FE

h, D

10

100

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75

100 125

Fig. 1 Max Power Dissipation vs

Ambie nt Temper at ure

V= 5V

CE

T= 25°C

A

1

I , COLLECTOR CURRENT (mA)

C

10

T = -50°C

A

100

Fig. 3 DC Current Gain vs. Collector Current

175

150

T = 150°C

A

200

1,000

0

110

I , COLLECTOR CURRENT (mA)

C

100

1,000

Fig. 2 Collector Emitter Saturation Voltage

vs. Collector Current

1.0

0.9

E (V)

0.8

0.7

0.6

V= 5V

CE

T= -50°C

A

T= 25°C

A

0.5

0.4
T = 150°C

0.3

BE(ON)

V , BASE EMI

0.2

A

0.1

10.1

I , COLLECTOR CURRENT (mA)

C

Fig. 4 Base Emitter Voltage vs. Collector Current

10 100

z)
(M

V= 5V

CE

10

DWID

-BA
AI

T

f,

1

110

I , COLLECTOR CURRENT (mA)

C

Fig. 5 Gain-Bandwidth Product vs. Collector Current

DS30054 Rev. 11 - 2 2 of 3

100

www.diodes.com

MMBTA55 / MMBTA56

© Diodes Incorporated

Ordering Information (Note 5)

Device

MMBTA55-7-F
MMBTA56-7-F

Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Packaging Shipping

SOT-23 3000/Tape & Reel
SOT-23 3000/Tape & Reel

Marking Information

Date Code Key

Year 1998 1999 2000 2001 2002 2003 2004

Code J K L M N P R

Month Jan Feb Mar Apr May Jun Jul

Code 1 2 3 4 5 6 7

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

K2x

K2x = Product Type Marking Code, ex: K2H = MMBTA55
YM = Date Code Marking

YM

Y = Year ex: N = 2002
M = Month ex: 9 = September

2005 2006 2007 2008 2009 2010 2011 2012

S T U V W X Y Z

Aug Sep Oct Nov Dec

8 9 O N D

IMPORTANT NOTICE

LIFE SUPPORT

DS30054 Rev. 11 - 2 3 of 3

www.diodes.com

MMBTA55 / MMBTA56

© Diodes Incorporated