Diodes MMBTA42 User Manual

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MMBTA42

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Complementary PNP Type Available (MMBTA92)

• Ideal for Low Power Amplification and Switching

• Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 4 and 5)

• Qualified to AEC-Q101 Standards for High
Reliability

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe).

• Marking (See Page 2): K3M

• Ordering & Date Code Information: See Page 2

• Weight: 0.008 grams (approximate)

Maximum Ratings @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1) (Note 3)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range

= 25°C unless otherwise specified

A

E

B

C

TOP VIEW

G
H

D

V
V
V

R

Tj, T

A

CBO
CEO
EBO

Pd

E

IC

θJA

STG

B

C

K

J

L

M

300 V
300 V

6.0 V
500 mA
300 mW
417 °C/W

-55 to +150

SOT-23

Dim Min Max

A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α

0° 8°

All Dimensions in mm

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

300
300

6.0

⎯
⎯

⎯
⎯
⎯

100 nA
100 nA

V
V
V

IC = 100μA, IE = 0
IC = 1.0mA, IB = 0
IE = 100μA, IC = 0

VCB = 200V, IE = 0

V

= 6.0V, IC = 0

CE

ON CHARACTERISTICS (Note 2)

IC = 1.0mA, VCE = 10V

IC = 10mA, VCE = 10V

IC = 30mA, V

CE

= 10V
IC = 20mA, IB = 2.0mA
IC = 20mA, IB = 2.0mA

DC Current Gain

Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage

hFE

V

CE(SAT)

V

BE(SAT)

25
40

⎯ ⎯

40

⎯
⎯

0.5 V

0.9 V

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Current Gain-Bandwidth Product

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

dissipation rating (P

2. Short duration pulse test used to minimize self-heating effect.

3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (R

4. No purposefully added lead. Halogen and Antimony Free.

5. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code

) and power derating curve (figure 1).

d

Ccb

fT

⎯
50

V9 are built with Non-Green Molding Compound and may contain Halogens or Sb

3.0 pF
⎯

Fire Retardants.

2O3

MHz

VCB = 20V, f = 1.0MHz, IE = 0

VCE = 20V, IC = 10mA,

f = 100MHz

), power

θJA

DS30062 Rev. 11 - 2 1 of 3

www.diodes.com

MMBTA42

© Diodes Incorporated

P, P

OWE

R

S

SIP

A

O

C

O

CTO

R TO EM

R

C CURRENT

N

A

MIT

TER VOLTAG

N

N

T

H

P

R

ODUCT (M

H

N (mW )
TI

DI

D

10,000

1,000

GAI

400

350

300

250

200

150

100

50

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75 100 125

Fig. 1, Max Power Dissipation vs

Ambie nt Tem peratu re

V= 5V

CE

T = 150°C

A

150

Note 1

175

200

2.0
I

1.8

1.6

I

C
B

= 10

T=150°C

A

1.4

ITTE

1.2

1.0

0.8

0.6

LLE

T= 25°C

A

0.4
T= -50°C

CE(SAT)

V,

0.2

SATURATION VOLT AGE (V)

A

0

110

I , COLLECTOR CURRENT (mA)

C

Fig. 2, Collector Emitter Saturation Voltage

vs. Collector Current

100

1000

1.0
V= 5V

0.9

E (V)

0.8

0.7

CE

T= -50°C

A

FE

h, D

z)

DWID
BA

100

10

100

10

T = -50°C

1

1

A

T= 25°C

A

10 1000

I , COLLECTOR CURRENT (mA)

C

Fig. 3, DC Current Gain vs

Col lector Current

V= 5V

CE

100

0.6
T= 25°C

0.5

SE E

0.4

0.3

BE(ON)

V, B

0.2

A

T= 150°C

A

0.1

0.1

Fig. 4, Base Emitter Voltage vs C ollector Curr ent

110

I , COLLECTOR CURRENT (mA)

C

100

T

f, GAI

1

1

I , COLLECTOR CURRENT (mA)

C

10

Fig. 5, Gain Bandwid th Product vs

Collector Current

DS30062 Rev. 11 - 2 2 of 3

www.diodes.com

MMBTA42

© Diodes Incorporated