DIODES MMBTA28 Datasheet

Features

TCUDORPWEN

· Epitaxial Planar Die Construction

· Ideal for Medium Power Amplification and

Switching

· High Current Gain

Mechanical Data

· Case: SOT-23, Molded Plastic

· Case Material - UL Flammability Rating

Classification 94V-0

· Moisture sensitivity: Level 1 per J-STD-020A

· Terminals: Solderable per MIL-STD-202,

Method 208

· Terminal Connections: See Diagram

· Marking (See Page 2): K6R

· Weight: 0.008 grams (approx.)

· Ordering & Date Code Information: See Page 2

MMBTA28

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

SOT-23

E

B

B

C

TOP VIEW

G

H

C

A

B

C

E

D

K

J

D

E

L

M

Dim Min Max

A

0.37 0.51

B

1.20 1.40

C

2.30 2.50

D

0.89 1.03

E

0.45 0.60

G

1.78 2.05

H

2.80 3.00

J

0.013 0.10

K

0.903 1.10

L

0.45 0.61

M

0.085 0.180

a

0° 8°

All Dimensions in mm

Maximum Ratings

@ TA= 25°C unless otherwise specified

Characteristic Symbol MMBTA28 Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous

Power Dissipation

Thermal Resistance, Junction to Ambient

Operating and Storage and Temperature Range

Electrical Characteristics

@ TA = 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

ON CHARACTERISTICS (Note 2)

DC Current Gain

Collector-Emitter Saturation Voltage

Base- Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Input Capacitance

Current Gain-Bandwidth Product

V

(BR)CBO

V

(BR)EBO

V

(BR)CEO

I

CBO

I

EBO

h

V

CE(SAT)

V

BE(SAT)

C

C

Tj,T

FE

obo

ibo

f

T

V

CBO

V

CEO

V

EBO

I

C

P

d

R

qJA

STG

80 ¾ V

12 ¾ V

80 ¾ V

¾ 100 nA

¾ 100 nA

10,000
10,000

¾¾

¾ 1.5 V

¾ 2.0 V

8.0 Typical pF

15 Typical pF

125 ¾ MHz

80 V

80 V

12 V

500 mA

300

mW

417 °C/W

-55 to +150 °C

I

= 100mAIE = 0

C

= 100mAIC = 0

I

E

= 100mAIB = 0

I

C

VCB = 60V, IE= 0

VEB= 10V, IC = 0

I

= 10mA, VCE= 5.0V

C

IC = 100mA, VCE = 5.0V

IC = 100mA, IB = 100mA

IC = 100mA, VCE = 5.0V

VCB = 10V, f = 1.0MHz, IE = 0

VEB = 0.5V, f = 1.0MHz, IC = 0

= 5.0V, IC = 10mA,

V

CE

f = 100MHz

Notes: 1. Device mounted on FR-4 PCB, 1.6x1.6x0.06 nch pad layout as shown on Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

DS30367 Rev. 2 - 2 1 of 3 MMBTA28

www.diodes.com

Ordering Information

p

1.1

(Note 3)

TCUDORPWEN

Device

MMBTA28-7

Packaging Shipping

SOT-23 3000/Tape & Reel

Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

K6R = Product Type Marking Code
YM = Date Code Marking

Y = Year ex: N = 2002
M = Month ex: 9 = September

2005 2006 2007 2008 2009

STUVW

Date Code Key

Month Jan Feb March Apr May Jun Jul

Code

K6R

YM

Year 2002 2003 2004

Code

NPR

1234567

Aug Sep Oct Nov Dec

89 OND

D

P , POWER DISSIPATION (mW)

350

300

250

200

150

100

50

I

1.0

C

I

B

= 1000

T = -50°C

A

0.9

0.8

T = 25°C

0.7

0.6

0.5

A

T = 150°C

A

0.4

0.3

VOLTAGE (V)

0.2

0.1

CE(SAT)

V , COLLECTOR-EMITTER SATURATION

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

Fig. 1, Max Power Dissipation vs

100 125

75

Ambient Tem

150

erature

175

200

0

1

10

I , COLLECTOR CURRENT (mA)

C

100 1000

Fig. 2 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

DS30367 Rev. 2 - 2 2 of 3 MMBTA28

www.diodes.com