Diodes MMBTA14 User Manual

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MMBTA13 / MMBTA14

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Complementary PNP Types Available (MMBTA63

/MMBTA64)

• Ideal for Medium Power Amplification and Switching

• High Current Gain

• Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 3 and 4)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: See Diagram

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy

42 leadframe).

• MMBTA13 Marking (See Page 3): K2D, K3D

• MMBTA14 Marking (See Page 3): K3D

• Ordering & Date Code Information: See Page 3

• Weight: 0.008 grams (approximate)

Maximum Ratings @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range

= 25°C unless otherwise specified

A

A

C

TOP VIEW

BE

E

D

G
H

J

C

B

V

CBO

V

CEO

V

EBO

IC

PD

R

JA

θ

TJ, T

STG

B

C

K

L

E

M

30 V
30 V

10 V
300 mA
300 mW
417

-55 to +150

SOT-23

Dim Min Max

A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α

0° 8°

All Dimensions in mm

°CW

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current

ON CHARACTERISTICS (Note 2)

DC Current Gain MMBTA13
MMBTA14
MMBTA13
MMBTA14

Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2: Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead. Halogen and Antimony Free.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb

DS30047 Rev. 11 - 2 1 of 3

V

(BR)CEO

I

CBO

I

EBO

⎯
⎯

30

5,000

hFE

10,000
10,000
20,000

V

CE(SAT)

V

BE(SAT)

C

C

obo
ibo

fT

⎯

⎯

8.0 Typical pF
15 Typical pF

125

www.diodes.com

⎯

V
100 nA
100 nA

⎯ ⎯

1.5 V

2.0 V

⎯

2O3

MHz

Fire Retardants.

IC = 100μA VBE = 0V
VCB = 30V, IE = 0
V

= 10V, IC = 0

EB

IC = 10mA, VCE = 5.0V
IC = 10mA, V

CE

= 5.0V
IC = 100mA, VCE = 5.0V
IC = 100mA, V

CE

= 5.0V
IC = 100mA, IB = 100μA
IC = 100mA, VCE = 5.0V

VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 5.0V, IC = 10mA, f = 100MHz

MMBTA13 / MMBTA14

© Diodes Incorporated

P, P

OWER

PAT

O

N

C

O

CTO

R

T

O

T

TER

C CUR

REN

T GAIN

T

TER VOLTAG

GAIN

N

T

H P

R

ODU

C

T

H

400

350

300

(mW)
I

250

200

DISSI

150

100

D

1,000,000

100,000

10,000

FE

h, D

1,000

1000

50

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

Fig. 1, Max Power Dissipation vs Ambient Temperature

100

A

1

I , COLLECTOR CURRENT (mA)

C

75

10

100 125

100

150

175

Fig. 3, DC Current Gain vs Collector Current

200

1000

1.10

1.05

1.00

0.95

0.90

0.85

EMI

0.80

0.75

0.70

0.65

LLE

0.60

0.55

0.50

CE(SAT)

V,

SATURATION VOLTAGE (V)

0.45

0.40
1

Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current

1.6

1.5

1.4

1.3

E (V)

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

BE(ON)

V , BASE EMI

0.3

0.2

0.1 1

Fig. 4, Base Emitter Voltage vs. Collector Current

10

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

100

10

1000

100

z)
(M

100

DWID

10

BA

T

f,

1

110

I , COLLECTOR CURRENT (mA)

C

Fig. 5, Ga in Bandwidt h Product vs Collector Current

100

DS30047 Rev. 11 - 2 2 of 3

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MMBTA13 / MMBTA14

© Diodes Incorporated