DIODES MMBTA05, MMBTA06 Datasheet
Features
Epitaxial Planar Die Construction
·
Complementary PNP Types Available
·
(MMBTA55 / MMBTA56)
Ideal for Medium Power Amplification and
·
Switching
Mechanical Data
Case: SOT-23, Molded Plastic
·
Terminals: Solderable per MIL-STD-202,
·
Method 208
Terminal Connections: See Diagram
·
MMBTA05 Marking: K1G, K1H, R1H
·
MMBTA06 Marking: K1G, R1G
·
· Weight: 0.008 grams (approx.)
MMBTA05 / MMBTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
SOT-23
Dim Min Max
A
B
C
D
E
G
H
M
J
K
L
M
All Dimensions in mm
0.37 0.51
1.19 1.40
2.10 2.50
0.89 1.05
0.45 0.61
1.78 2.05
2.65 3.05
0.013 0.15
0.89 1.10
0.45 0.61
0.076 0.178
E
TOP VIEW
B
A
C
B
C
E
D
G
H
K
J
L
Maximum Ratings
Characteristic Symbol MMBTA05 MMBTA06 Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Electrical Characteristics
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage MMBTA05
Collector-Emitter Breakdown Voltage MMBTA05
Emitter-Base Breakdown Voltage
Collector Cutoff Current MMBTA05
Collector Cutoff Current MMBTA05
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
@ TA= 25°C unless otherwise specified
@ TA= 25°C unless otherwise specified
MMBTA06
MMBTA06
MMBTA06
MMBTA06
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
h
V
CE(SAT)
V
BE(SAT)
T
FE
f
T
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
j,TSTG
60 80 V
60 80 V
4.0 V
500 mA
350
357 K/W
-55 to +150 °C
60
80
60
80
4.0 ¾ V
¾ 100 nA
¾ 100 nA
100 ¾¾
¾ 0.25 V
¾ 1.2 V
100 ¾ MHz
¾ V
¾ V
I
C
I
C
I
E
V
V
V
V
I
C
I
C
I
C
I
C
V
f = 100MHz
mW
= 100mA, IE= 0
= 1.0mA, IB= 0
= 100mA, IC= 0
= 60V, IE= 0
CB
= 80V, IE= 0
CB
= 60V, IBO= 0V
CE
= 80V, IBO= 0V
CE
= 10mA, VCE= 1.0V
= 100mA, VCE= 1.0V
= 100mA, IB= 10mA
= 100mA, VCE= 1.0V
= 2.0V, IC= 10mA,
CE
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30037 Rev. C-2 1 of 2 MMBTA05 / MMBTA06
p
350
1000
p
10
g
2.0
T = +125ºC
A
V=1V
CE
D
P , POWER DISSIPATION (mW)
300
250
200
150
100
50
T = -40ºC
100
A
T = +25ºC
A
10
FE
h , PULSED CURRENT GAIN
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
75
100 125
Ambient Tem
150
erature
175
200
1
1
10
I , COLLECTOR CURRENT (mA)
C
100
1000
Fig. 2, Typical Pulsed Current Gain
vs. Collector Current
1.8
1.6
1.4
I = 30mA
1.2
1.0
I = 10mA
C
C
0.8
0.6
0.4
0.2
CE
V , COLLECTOR EMITTER VOLTAGE (V)
0
0.001 0.01
I = 1mA
C
0.1
I BASE CURRENT (mA)
Fi
B,
.3Typical Collector Saturation Region
V = 80V
CB
1
1
0.1
CBO
I , COLLECTOR-BASE CURRENT (nA)
0.01
25 50 75 100 125
T , AMBIENT TEMPERATURE ( )AºC
Fig. 4 Typical Collector-Cutoff Current
vs. Ambient Tem
erature
I = 100mA
C
10 100
DS30037 Rev. C-2 2 of 2 MMBTA05 / MMBTA06
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