Diodes MMBT6427 User Manual

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MMBT6427

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ideal for Low Power Amplification and Switching

• High Current Gain

• Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 1 and 4)

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy

42 leadframe).

• Terminal Connections: See Diagram

• Marking (See Page 3): K1D

• Ordering & Date Code Information: See Page 3

• Weight: 0.008 grams (approximate)

Maximum Ratings @T

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

E

B

C

TOP VIEW

G
H

B

A

E

D

C

B

C

K

J

E

L

V

CBO

V

CEO

V

EBO

IC

M

40 V
40 V
12 V

500 mA

SOT-23

Dim Min Max

A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α

0° 8°

All Dimensions in mm

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 2) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 2)@ TA = 25°C
Operating and Storage Temperature Range

Electrical Characteristics @T

OFF CHARACTERISTICS (Note 3)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current

ON CHARACTERISTICS (Note 3)

DC Current Gain

Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage

Base-Emitter On Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Input Capacitance

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

3. Short duration pulse test used to minimize self-heating effect.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb

DS30048 Rev. 9 - 2 1 of 3

Characteristic Symbol Min Max Unit Test Condition

= 25°C unless otherwise specified

A

TJ, T

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEO

I

EBO

40
40

12
⎯
⎯
⎯

10,000
20,000

hFE

14,000

V

CE(SAT)

V

BE(SAT)

V

BE(ON)

C
C

obo
ibo

⎯

⎯

⎯

www.diodes.com

R

JA

θ

STG

⎯
⎯
⎯

V
V
V

50 nA

1.0

μA

50 nA

100,000
200,000

⎯

140,000

1.2

1.5

V

2.0 V

1.75 V

8.0 Typical pF
15 Typical pF

Fire Retardants.

2O3

300 mW
417

-55 to +150

°C/W

°C

IC = 100μA, IE = 0
IC = 10mA, IB = 0
IE = 10μA, IC = 0
VCB = 30V, IE = 0
V

= 25V, IB = 0

CE

V

= 10V, IC = 0

EB

IC = 10mA, VCE = 5.0V
IC = 100mA, V

CE

= 5.0V
IC = 500mA, VCE = 5.0V
IC = 50mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA
IC = 50mA, VCE =5.0V

VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0

MMBT6427

© Diodes Incorporated

400

350

300

250

200

150

100

D

P , POWER DISSIPATION (mW)

50

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

Fig. 1, Max Power Dissipation vs Ambient Temperature

1,000,000

100,000

10,000

FE

h , DC CURRENT GAIN

1,000

100

1000

A

1

I , COLLECTOR CURRENT (mA)

C

Fig. 3, DC Current Gain vs Collector Current

75

10

100 125

100

150

175

200

1000

1.10

1.05

1.00

0.95

0.90

0.85

0.80

0.75

0.70

0.65

0.60

0.55

0.50

CE(SAT)

V , COL L E C T O R T O E MITT E R

SA T U R ATION V O LTA G E (V )

0.45

0.40
1

I , COLLECTOR CURRENT (mA)

Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

BE(ON)

0.4

V , BASE EMITTER VOLTAGE (V)

0.3

0.2

0.1 1

C

Fig. 4, Base Emitter Voltage vs. Collector Current

10

I , COLLECTOR CURRENT (mA)

C

100

10

1000

100

100

10

T

f , GAIN BANDWIDTH PRODUCT (MHz)

1

110

Fig. 5, Gain Bandw idth Product vs Collector Curr ent

I , COLLECTOR CURRENT (mA)

C

100

DS30048 Rev. 9 - 2 2 of 3

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MMBT6427

© Diodes Incorporated