DIODES MMBT5551 Datasheet

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

· Epitaxial Planar Die Construction

· Complementary PNP Type Available

(MMBT5401)

· Ideal for Medium Power Amplification and
Switching

Mechanical Data

· Case: SOT-23, Molded Plastic

· Case material - UL Flammability Rating

Classification 94V-0

· Moisture sensitivity: Level 1 per J-STD-020A

· Terminals: Solderable per MIL-STD-202,

Method 208

· Terminal Connections: See Diagram

· Marking (See Page 2): K4N

· Ordering & Date Code Information: See Page 2

· Weight: 0.008 grams (approx.)

E

B

C

TOP VIEW

G

H

B

MMBT5551

A

B

C

E

D

K

J

L

C

E

M

SOT-23

Dim Min Max

A

0.37 0.51

B

1.20 1.40

C

2.30 2.50

D

0.89 1.03

E

0.45 0.60

G

1.78 2.05

H

2.80 3.00

J

0.013 0.10

K

0.903 1.10

L

0.45 0.61

M

0.085 0.180

a

0° 8°

All Dimensions in mm

Maximum Ratings

@ TA= 25°C unless otherwise specified

Characteristic Symbol MMBT5551 Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

Electrical Characteristics

@ TA = 25°C unless otherwise specified

V

V

V

R

Tj,T

CBO

CEO

EBO

I

C

P

d

qJA

STG

180 V

160 V

6.0 V

200 mA

300

mW

417 °C/W

-55 to +150 °C

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

180 ¾ V

160 ¾ V

6.0 ¾ V

¾ 50

¾ 50 nA

nA
mA

= 100mA, IE = 0

I

C

IC= 1.0mA, IB = 0

= 10mA, IC = 0

I

E

V

= 120V, IE= 0

CB

V

= 120V, IE= 0, TA = 100°C

CB

VEB= 4.0V, IC = 0

ON CHARACTERISTICS (Note 2)

DC Current Gain

Collector-Emitter Saturation Voltage

Base- Emitter Saturation Voltage

h

V

CE(SAT)

V

BE(SAT)

80

FE

80
30

¾

¾

250

¾

0.15

0.20

¾ 1.0 V

IC = 1.0mA, VCE = 5.0V

= 10mA, VCE = 5.0V

I

¾

C

IC = 50mA, VCE= 5.0V

IC= 10mA, IB = 1.0mA

V

IC = 50mA, IB = 5.0mA

IC= 10mA, IB = 1.0mA

= 50mA, IB = 5.0mA

I

C

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Small Signal Current Gain

Current Gain-Bandwidth Product

Noise Figure

C

obo

h

fe

f

T

¾ 6.0 pF

50 250 ¾

100 300 MHz

NF ¾ 8.0 dB

VCB = 10V, f = 1.0MHz, IE = 0

VCE= 10V, IC = 1.0mA,
f = 1.0kHz

V

= 10V, IC = 10mA,

CE

f = 100MHz

V

= 5.0V, IC = 200mA,

CE

= 1.0kW, f = 1.0kHz

R

S

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

DS30061 Rev. 4 - 2 1 of 2 MMBT5551

www.diodes.com

Ordering Information

(Note 3)

Device

MMBT5551-7

Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Packaging Shipping

SOT-23 3000/Tape & Reel

Marking Information

K4N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002

YM

M = Month ex: 9 = September

2005 2006 2007 2008 2009

ST U VW

Aug Sep Oct Nov Dec

89 O ND

Date Code Key

Year 1998 1999 2000 2001 2002 2003 2004

Code

Month Jan Feb March Apr May Jun Jul

Code

K4N

JKLMNPR

1234567

DS30061 Rev. 4 - 2 2 of 2 MMBT5551

www.diodes.com