Diodes MMBT5551 User Manual

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Features

• Epitaxial Planar Die Construction

• Complementary PNP Type Available (MMBT5401)

• Ideal for Low Power Amplification and Switching

• Lead, Halogen and Antimony Free, RoHS Compliant

• "Green" Device (Notes 2 and 3)

Maximum Ratings @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)

= 25°C unless otherwise specified

A

Top View

MMBT5551

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: See Diagram

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.008 grams (approximate)

C

B

Device Schematic

V

CBO

V

CEO

V

EBO

IC

E

180 V
160 V

6.0 V

600 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

2. No purposefully added lead. Halogen and Antimony Free.

MMBT5551

Document number: DS30061 Rev. 11 - 2

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb

PD

R

JA

θ

TJ, T

STG

1 of 4

www.diodes.com

300 mW
417

2O3

-55 to +150

Fire Retardants.

°C/W

°C

August 2008

© Diodes Incorporated

P

P

O

R

PATIO

C

CUR

REN

T GAIN

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage

Collector Cutoff Current
Emitter Cutoff Current

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I
I

ON CHARACTERISTICS (Note 4)

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V

CE(SAT)

V

BE(SAT)

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

Small Signal Current Gain

Current Gain-Bandwidth Product

Noise Figure nF

Notes: 4. Short duration pulse test used to minimize self-heating effect.

400

350

⎯

CBO

⎯

EBO

hFE

⎯

obo

hfe

fT

180
160

6.0

⎯
⎯
⎯

50
50 nA

80
80
30

⎯

⎯

⎯

250

⎯

0.15

0.20

1.0 V

6.0 pF

50 250

100 300 MHz

⎯

8.0 dB

1,000

V = 5V

CE

V

IC = 100μA, IE = 0

V

IC = 1.0mA, IB = 0

V

IE = 10μA, IC = 0

nA

VCB = 120V, IE = 0

μA

VCB = 120V, IE = 0, TA = 100°C
V

= 4.0V, IC = 0

EB

IC = 1.0mA, VCE = 5.0V

⎯

IC = 10mA, VCE = 5.0V
IC = 50mA, V
IC = 10mA, IB = 1.0mA

V

IC = 50mA, IB = 5.0mA

CE

IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA

VCB = 10V, f = 1.0MHz, IE = 0
V

= 10V, IC = 1.0mA,

CE

⎯

f = 1.0kHz
VCE = 10V, IC = 10mA,

f = 100MHz
V

= 5.0V, IC = 200μA,

CE

RS = 1.0kΩ, f = 1.0kHz

MMBT5551

= 5.0V

300

T = 150°C

A

N (mW)

250

DISSI
WE

,

D

200

150

100

100

FE

h, D

10

T = 25°C

A

T = -50°C

A

50

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

75 100 125

A

150

Fig. 1 Pow er D issipati o n vs. Ambient Tempe r ature

175

200

1

1

I , COLLECTOR CURRENT (mA)

C

10

Fig. 2 Typical DC Current Gain vs. Collector Current

100

MMBT5551

Document number: DS30061 Rev. 11 - 2

2 of 4

www.diodes.com

August 2008

© Diodes Incorporated