Diodes MMBT5551 User Manual

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Features

• Epitaxial Planar Die Construction

• Complementary PNP Type Available (MMBT5401)

• Ideal for Low Power Amplification and Switching

• Lead, Halogen and Antimony Free, RoHS Compliant

• "Green" Device (Notes 2 and 3)

Maximum Ratings @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)

= 25°C unless otherwise specified

A

Top View

MMBT5551

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: See Diagram

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.008 grams (approximate)

C

B

Device Schematic

V

CBO

V

CEO

V

EBO

IC

E

180 V
160 V

6.0 V

600 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

2. No purposefully added lead. Halogen and Antimony Free.

MMBT5551

Document number: DS30061 Rev. 11 - 2

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb

PD

R

JA

θ

TJ, T

STG

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300 mW
417

2O3

-55 to +150

Fire Retardants.

°C/W

°C

August 2008

© Diodes Incorporated

P

P

O

R

PATIO

C

CUR

REN

T GAIN

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage

Collector Cutoff Current
Emitter Cutoff Current

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I
I

ON CHARACTERISTICS (Note 4)

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V

CE(SAT)

V

BE(SAT)

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

Small Signal Current Gain

Current Gain-Bandwidth Product

Noise Figure nF

Notes: 4. Short duration pulse test used to minimize self-heating effect.

400

350

⎯

CBO

⎯

EBO

hFE

⎯

obo

hfe

fT

180
160

6.0

⎯
⎯
⎯

50
50 nA

80
80
30

⎯

⎯

⎯

250

⎯

0.15

0.20

1.0 V

6.0 pF

50 250

100 300 MHz

⎯

8.0 dB

1,000

V = 5V

CE

V

IC = 100μA, IE = 0

V

IC = 1.0mA, IB = 0

V

IE = 10μA, IC = 0

nA

VCB = 120V, IE = 0

μA

VCB = 120V, IE = 0, TA = 100°C
V

= 4.0V, IC = 0

EB

IC = 1.0mA, VCE = 5.0V

⎯

IC = 10mA, VCE = 5.0V
IC = 50mA, V
IC = 10mA, IB = 1.0mA

V

IC = 50mA, IB = 5.0mA

CE

IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA

VCB = 10V, f = 1.0MHz, IE = 0
V

= 10V, IC = 1.0mA,

CE

⎯

f = 1.0kHz
VCE = 10V, IC = 10mA,

f = 100MHz
V

= 5.0V, IC = 200μA,

CE

RS = 1.0kΩ, f = 1.0kHz

MMBT5551

= 5.0V

300

T = 150°C

A

N (mW)

250

DISSI
WE

,

D

200

150

100

100

FE

h, D

10

T = 25°C

A

T = -50°C

A

50

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

75 100 125

A

150

Fig. 1 Pow er D issipati o n vs. Ambient Tempe r ature

175

200

1

1

I , COLLECTOR CURRENT (mA)

C

10

Fig. 2 Typical DC Current Gain vs. Collector Current

100

MMBT5551

Document number: DS30061 Rev. 11 - 2

2 of 4

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August 2008

© Diodes Incorporated

C

O

CTO

R

T

TER

T

T

R

TUR

O

OLT

G

GAIN

N

T

H PRODUCT

H

MMBT5551

E (V)
A

N V
N-

E

BE(ON)

V , BASE-EMI

1.0

V = 5V

CE

0.9

T = -50°C

0.8

A

0.7

0.6

T = 25°C

0.5

0.4

0.3

0.2

0.1

1

I , COLLECTOR CURRENT (mA)

C

Fig. 4 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

A

10

T = 150°C

A

100

-EMI

LLE

SATURATION VOLT AGE (V)

CE(SAT)

V,

1,000

z)

0.15

0.14

0.13

0.12

0.11

0.10

0.09

0.08

0.07

0.06

0.05

0.04
1

10

I , COLLECTOR CURRENT (mA)

C

100

Fig. 3 Typical Collector-Emitter Saturation Voltage

vs. Collecto r Cu r re nt

V = 5V

CE

1,000

(M

100

DWID

10

-BA

T

f,

1

1

I , COLLECTOR CURRENT (mA)

C

10 100

Fig. 5 Typical Gain-Bandwidth Product vs.

Collector Current

Ordering Information (Note 5)

Part Number Case Packaging

MMBT5551-7-F SOT-23 3000/Tape & Reel

Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

K4N

Date Code Key

Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code J K L M N P R S T U V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

MMBT5551

Document number: DS30061 Rev. 11 - 2

www.diodes.com

K4N = Product Type Marking Code
YM = Date Code Marking

YM

Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)

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August 2008

© Diodes Incorporated

MMBT5551

Package Outline Dimensions

K

J

A

SOT-23

Dim Min Max Typ

A 0.37 0.51 0.40

C

B

B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535

H

K1

F

D

G

L

M

G 1.78 2.05 1.83

H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

0° 8° -

α

All Dimensions in mm

Suggested Pad Layout

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

Y

Dimensions Value (in mm)

Z 2.9

Z

C

X 0.8
Y 0.9
C 2.0
E 1.35

X

E

IMPORTANT NOTICE

LIFE SUPPORT

MMBT5551

Document number: DS30061 Rev. 11 - 2

4 of 4

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August 2008

© Diodes Incorporated