Diodes MMBT5401 User Manual
Features
Epitaxial Planar Die Construction
Complementary NPN Type - MMBT5551
Ideal for Low Power Amplification and Switching
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
SOT23
Top View
B
Device Symbol
MMBT5401
150V PNP SMALL SIGNAL TRANSISTOR IN SOT23
Mechanical Data
Case: SOT23
Case material: molded plastic, “Green” molding compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
C
E
Top View
Pin-Out
Ordering Information
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
MMBT5401-7-F AEC-Q101 K4M 7 8 3,000
MMBT5401-13-F AEC-Q101 K4M 13 8 10,000
MMBT5401Q-7-F Automotive K4M 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
(Notes 4 & 5)
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code J K L M N P R S T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
K4M
K4M = Product Type Marking Code
YM = Date Code Marking
YM
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
MMBT5401
Document number: DS30057 Rev. 10 - 2
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December 2013
© Diodes Incorporated
MMBT5401
Absolute Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
CBO
V
CEO
V
EBO
IC
-160 V
-150 V
-5.0 V
-600 mA
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation
Thermal Resistance, Junction to Ambient
(Note 6)
(Note 7) 350
(Note 6)
(Note 7) 357
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
P
R
R
T
J,TSTG
θJA
θJL
D
310
403
350
-55 to +150
mW
C/W
C/W
C
ESD Ratings (Note 9)
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted on 15 mm x 15mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the leads).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Characteristic Symbol Value Unit JEDEC Class
MMBT5401
Document number: DS30057 Rev. 10 - 2
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December 2013
© Diodes Incorporated
Thermal Characteristics and Derating Information
0.4
0.3
0.2
0.1
0.0
0 25 50 75 100 125 150
Max Power Dissipation (W)
Temperature (°C)
Thermal Resistance (°C/W)
Derating Curve
10
Single Pulse. T
amb
=25°C
MMBT5401
400
350
300
250
D=0.5
200
150
D=0.2
100
50
0
100µ 1m 10m 100m 1 10 100 1k
D=0.1
Single Pulse
D=0.05
Pulse Width (s)
Transient Thermal Impedance
1
0.1
10m 100m 1 10 100 1k
Max Power Dissipation (W)
Pulse Width (s)
Pulse Power Dissipation
MMBT5401
Document number: DS30057 Rev. 10 - 2
3 of 7
www.diodes.com
December 2013
© Diodes Incorporated
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