Diodes MMBT4401T User Manual
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMBT4403T)
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Terminal Connections: See Diagram
• Marking Information: 2X, See Page 4
• Ordering & Date Code Information: See Page 4
• Weight: 0.002 grams (approximate)
K
J
MMBT4401T
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
TOP VIEW
B
B
A
C
E
G
H
D
C
E
C
B
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D
⎯ ⎯
G 0.90 1.10 1.00
N
M
H 1.50 1.70 1.60
J 0.00 0.10 0.05
L
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
0° 8°
α
All Dimensi mm ons in
0.50
⎯
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
DS30272 Rev. 8 - 2
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V
V
V
R
Tj, T
CBO
CEO
EBO
IC
Pd
JA
θ
STG
60 V
40 V
6.0 V
600 mA
150 mW
833 °C/W
-55 to +150
°C
MMBT4401T
© Diodes Incorporated
P
P
O
R
PAT
O
C
C
URR
T
G
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
250
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
IBL
hFE
V
CE(SAT)
V
BE(SAT)
C
C
hie
hre
hfe
hoe
obo
ibo
fT
td
tr
ts
tf
60
40
6.0
⎯
⎯
20
40
80
100
40
⎯
0.75
⎯
⎯
⎯
1.0 15
0.1 8.0 x 10-4
40 500
1.0 30
250
⎯
⎯
⎯
⎯
1,000
⎯
⎯
⎯
100 nA
100 nA
⎯
⎯
⎯
300
⎯
⎯
0.40
0.75
0.95
1.2
6.5 pF
30 pF
kΩ
⎯
μS
⎯
MHz
15 ns
20 ns
225 ns
30 ns
V
IC = 100μA, IE = 0
V
IC = 1.0mA, IB = 0
V
IE = 100μA, IC = 0
V
= 35V, V
CE
V
= 35V, V
CE
IC = 100µA, V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, V
EB(OFF)
EB(OFF)
CE
CE
IC = 500mA, VCE = 2.0V
IC = 150mA, IB = 15mA
V
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
V
IC = 500mA, IB = 50mA
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
V
= 10V, IC = 1.0mA,
CE
f = 1.0kHz
VCE = 10V, IC = 20mA,
f = 100MHz
VCC = 30V, IC = 150mA,
V
= 2.0V, IB1 = 15mA
BE(off)
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
= 0.4V
= 0.4V
= 1.0V
= 1.0V
200
T = 125°C
A
AIN
N (mW)
I
150
DISSI
100
WE
,
d
50
0
0160200
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1 Power Derating Curve
1208040
DS30272 Rev. 8 - 2
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100
EN
FE
h, D
10
1
0.1
T = 25°C
T = -25°C
A
I , COLLECTOR CURRENT (mA)
C
A
1
10
Fig. 2 Typical DC Current Gain vs.
Collector Current
V = 1.0V
100
CE
1,000
MMBT4401T
© Diodes Incorporated
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