Diodes MMBT4126 User Manual

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Features

• Epitaxial Planar Die Construction

• Complementary NPN Type Available (MMBT4124)

• Ideal for Low Power Amplification and Switching

• Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 2 and 4)

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy

42 leadframe).

• Marking (See Page 3): K2B

• Ordering & Date Code Information: See Page 3

• Weight: 0.008 grams (approximate)

MMBT4126

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

B

C

SOT-23

Dim Min Max

A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60

K

J

L

M

G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α

0° 8°

All Dimensions in mm

E

B

B

C

TOP VIEW

G
H

C

A

E

D

E

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 3)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current

ON CHARACTERISTICS (Note 3)

DC Current Gain
Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Input Capacitance

Small Signal Current Gain

Current Gain-Bandwidth Product

Noise Figure NF

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

2. No purposefully added lead. Halogen and Antimony Free.

3. Short duration pulse test used to minimize self-heating effect.

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS30106 Rev. 8 - 2 1 of 3

V

CBO

V

CEO

V

EBO

IC

PD

R

JA

θ

TJ, T

STG

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

hFE

V

CE(SAT)

V

BE(SAT)

C

C

hfe

obo
ibo

fT

-25

-25

-4.0

⎯

⎯

120

60

⎯
⎯

⎯

⎯

120 480

250

⎯

www.diodes.com

-55 to +150

⎯
⎯
⎯

-50 nA

-50 nA

360

⎯

⎯

-0.40 V

-0.95 V

4.5 pF
10 pF

⎯

⎯

MHz

4.0 dB

-25 V

-25 V

-4.0 V

-200 mA
300 mW
417

V

IC = -10μA, IE = 0

V

IC = -1.0mA, IB = 0

V

IE = -10μA, IC = 0
V

= -20V, IE = 0V

CB

V

= -3.0V, IC = 0V

EB

IC = -2.0mA, VCE = -1.0V
IC = -50mA, V

CE

= -1.0V
IC = -50mA, IB = -5.0mA
IC = -50mA, IB = -5.0mA

VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
V

= 1.0V, IC = -2.0mA,

CE

f = 1.0kHz
VCE = -20V, IC = -10mA,

f = 100MHz
V

= -5.0V, IC = -100μA,

CE

RS = 1.0kΩ, f = 1.0kHz

°C/W

°C

MMBT4126

© Diodes Incorporated

P

P

OWER

PAT

O

N

C

PUT CAPAC

T

C

F

C

O

CTO

R

T

TER

D

C CUR

REN

T GAIN

T

T

R

100

350

)

300

(mW)
I

DISSI

250

200

150

E (p
AN

I

10

,

100

D

1,000

100

FE

10

h,

50

1

0

0.1

1.0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75

100 125

Fig. 1, Max Power Dissipation vs.

Ambient Temperature

1

I , COLLECTOR CURRENT (mA)

C

10

Fig. 3, Typical DC Current Gain vs.

Collector Current

150

100

175

200

1,000

, IN

IBO

OBO

C , OUTPUT CAPACIT ANCE (pF)

1

0.1
V , COLLECTOR-BASE VOLTAGE (V)

CB

1

10

100

Fig. 2, Input and Output Capacitance vs.

Collector-Base Voltage

10

(V)

1

-EMI

LLE

0.1

CE(SAT)

SATURATION VOLT A GE

V,

0.01
1

10

I , COLLECTOR CURRENT (mA)

C

100 1,000

Fig. 4, Typical Collector-Emitter Saturation Voltage

vs. Collector Current

0.9

(V)
E

0.8

0.7

SATURATION VOLT AGE

BE(SAT)

0.6

V , BASE- EMI

I

C

= 10

I

B

0.5
110

I , COLLECTOR CURRENT (mA)

C

100

Fig. 5, Typical Base-Emitter

Saturation Voltage vs. Collector Current

DS30106 Rev. 8 - 2 2 of 3

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MMBT4126

© Diodes Incorporated