Diodes MMBT4124 User Manual
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Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMBT4126)
• Ideal for Medium Power Amplification and Switching
• Lead, Halogen and Antimony Free, RoHS Compliant
• "Green" Device (Notes 2 and 4)
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Top View
MMBT4124
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
C
B
Device Schematic
V
CBO
V
CEO
V
EBO
IC
E
30 V
25 V
5.0 V
200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
MMBT4124
Document number: DS30105 Rev. 11 - 2
Characteristic Symbol Min Max Unit Test Condition
A
PD
R
TJ, T
= 25°C unless otherwise specified
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
hFE
V
CE(SAT
V
BE(SAT
C
obo
C
ibo
hfe
fT
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JA
STG
30
25
5.0
⎯
⎯
120
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
50 nA
50 nA
360
⎯
0.30 V
0.95 V
4.0 pF
8.0 pF
120 480
300
⎯
Fire Retardants.
2O3
300 mW
417
-55 to +150
V
IC = 10μA, IE = 0
V
IC = 1.0mA, IB = 0
V
IE = 10μA, IC = 0
V
= 20V, IE = 0V
CB
V
= 3.0V, IC = 0V
EB
IC = 2.0mA, VCE = 1.0V
⎯
IC = 50mA, V
CE
IC = 50mA, IB = 5.0mA
IC = 50mA, IB = 5.0mA
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
V
= 1.0V, IC = 2.0mA,
CE
⎯
f = 1.0kHz
VCE = 20V, IC = 10mA,
MHz
f = 100MHz
°C/W
°C
= 1.0V
January 2009
© Diodes Incorporated
P, P
OWER
PATIO
C CUR
R
T
G
C
O
CTO
R
T
TER
T
TER
TURATIO
OLTAG
5
CAPAC
TANC
F
400
350
300
N (mW)
250
200
DISSI
150
100
D
RC/W
°
= 417
θ
50
JA
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1)
1
I
C
= 10
I
B
150
175
200
1,000
AIN
100
EN
10
FE
h, D
1
0.1
1
I , COLLECTOR CURRENT (mA)
C
10 1,000100
Fig. 2 Typical DC Current Gain vs. Collector Current
10
I
E (V)
C
= 10
I
B
MMBT4124
-EMI
0.1
LLE
SATURA TION VOL TAGE (V)
CE(SAT)
V,
0.01
0.1 1 10
Fig. 3 Typical Collector- Emitter Saturation Volt age
1
)
10
E (p
I
100
I , COLLECTOR CURRENT (mA)
C
vs. Collector Current
f = 1MHz
1,000
N V
1
SA
0.1
0.1 1 10
BE(SAT)
V , BASE-EMI
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Base-Emitter Saturation Voltage
vs. Collecto r Cu r re nt
100
1,000
5
C
ibo
C
obo
0
0.1
1
V , REVERSE VOLT AGE (V)
R
10
100
Fig. 5 Typical Capacitance Characteristics
MMBT4124
Document number: DS30105 Rev. 11 - 2
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January 2009
© Diodes Incorporated
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