Diodes MMBT3906T User Manual

Features

• Epitaxial Planar Die Construction

• Complementary NPN Type Available (MMBT3904T)

• Lead Free/RoHS Compliant (Note 2)

• "Green" Device (Note 3 and 4)

Mechanical Data

• Case: SOT-523

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe)

• Terminal Connections: See Diagram

• Marking Information: 3N, See Page 3

• Ordering & Date Code Information: See Page 3

• Weight: 0.002 grams (approximate)

K

J

MMBT3906T

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

TOP VIEW

B

A

C

B

G

H

D

C

E

C

B

SOT-523

Dim Min Max Typ

A 0.15 0.30 0.22

B 0.75 0.85 0.80

E

C 1.45 1.75 1.60

D

⎯ ⎯

G 0.90 1.10 1.00

N

M

H 1.50 1.70 1.60

J 0.00 0.10 0.05

L

K 0.60 0.80 0.75

L 0.10 0.30 0.22

M 0.10 0.20 0.12

N 0.45 0.65 0.50

0° 8°

α

All Dimensi mm ons in

0.50

⎯

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous

Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

DS30271 Rev. 8 - 2

www.diodes.com

1 of 4

V

V

V

R

Tj, T

CBO

CEO

EBO

IC

Pd

JA

θ

STG

-40 V

-40 V

-5.0 V

-200 mA

150 mW

833 °C/W

-55 to +150

°C

MMBT3906T

© Diodes Incorporated

C

P

U

T

C

PACITANC

F

P

P

O

R

D

PATIO

N

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Base Cutoff Current

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CEX

IBL

ON CHARACTERISTICS (Note 5)

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

hFE

V

CE(SAT)

V

BE(SAT)

Noise Figure NF

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Input Capacitance

C

C

Input Impedance

Voltage Feedback Ratio

Small Signal Current Gain

Output Admittance

hre

hfe

hoe

Current Gain-Bandwidth Product

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effect.

250

obo

ibo

hie

fT

td

tr

ts

tf

-40

-40

-5.0

⎯

⎯

60
80

100

60
30

⎯

-0.65
⎯

-0.25

-0.40

-0.85

-0.95

⎯

⎯

⎯

2.0 12

0.1 10 x 10-4

100 400

3.0 60

250

⎯

⎯

⎯

⎯

100

⎯

⎯

⎯

-50 nA

-50 nA

⎯
⎯

300

⎯
⎯

4.0 dB

4.5 pF

10 pF

V

IC = -10μA, IE = 0

V

IC = -1.0mA, IB = 0

V

IE = -10μA, IC = 0

V

V

IC = -100µA, V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V

⎯

IC = -50mA, V
IC = -100mA, VCE = -1.0V

IC = -10mA, IB = -1.0mA

V

IC = -50mA, IB = -5.0mA

IC = -10mA, IB = -1.0mA

V

IC = -50mA, IB = -5.0mA

V
R

VCB = -5.0V, f = 1.0MHz, IE = 0

VEB = -0.5V, f = 1.0MHz, IC = 0

kΩ

V
f = 1.0kHz

⎯

μS

VCE = -20V, IC = -10mA,

⎯

35 ns

35 ns

225 ns

75 ns

MHz

f = 100MHz

VCC = -3.0V, IC = -10mA,
V

VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA

= -30V, V

CE

= -30V, V

CE

= -5.0Vdc, IC = 100μAdc,

CE

= 1.0kΩ, f = 1.0kHz

S

= 1.0V, IC = 10mA,

CE

= 0.5V, IB1 = -1.0mA

BE(off)

EB(OFF)

EB(OFF)

= -1.0V

CE

= -1.0V

CE

= -3.0V

= -3.0V

)

200

(mW)

E (p

150

10

ISSI

WE

,

D

100

50

A

, IN

IBO

OBO

C , OUTPUT CAPACITANCE (pF)

1

0

0

40

T , AMBIENT TEMPERATURE (°C)

A

DS30271 Rev. 8 - 2

80 120 160 200

Fig. 1 Power Derating Curve

2 of 4

www.diodes.com

0.1
V , COLLECTOR-BASE VOLTAGE (V)

CB

Fig. 2 Typical Input and Output Capacitance vs.

1

10

Collector-Base Voltage

100

MMBT3906T

© Diodes Incorporated