Diodes MMBT3906LP User Manual

Features

 Complementary NPN Type Available (MMBT3904LP)
 Ultra-Small Leadless Surface Mount Package
 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

ADVANCE INFORMATION

X1-DFN1006-3

Bottom View

MMBT3906LP

40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Mechanical Data

 Case: X1-DFN1006-3
 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish  NiPdAu, Solderable per MIL-STD-202,

Method 208

 Weight: 0.0008 grams (approximate)

C

B

E

Device Symbol

e4

B

C

E

Top View

Device Schematic

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

MMBT3906LP-7 3N 7 8 3,000

MMBT3906LP-7B 3N 7 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

MMBT3906LP

Document number: DS31836 Rev. 6 - 2

MMBT3906LP-7 MMBT3906LP-7B

3N3N

Top View

Dot Denotes

Collector Side

Top View

Bar Denotes Base

and Emitter Side

1 of 6

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3N = Product Type Marking Code

February 2013

© Diodes Incorporated



Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current

V

CBO

V

CEO

V

EBO

I

C

I

CM

-40 V

-40 V

-6.0 V

-200 mA

-200 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage and Temperature Range

ADVANCE INFORMATION

P

D

R

θJA

R

θJL

T

, T

J

STG

460 mW
272 °C/W
110 °C/W

-55 to +150 °C

ESD Ratings (Note 7)

MMBT3906LP

Electrostatic Discharge - Human Body Model ESD HBM 4,000 to < 8,000 V 3A

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Machine Model ESD MM 200 to < 400 V B

Notes: 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heat sink.

6. Thermal resistance from junction to solder-point (at the end of the collector lead).

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

MMBT3906LP

Document number: DS31836 Rev. 6 - 2

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February 2013

© Diodes Incorporated

T

RAN

N

T T

HER

R

TAN

C

P, P

T

R

T P

O

R

P, P

OWER D

PATIO

N

Thermal Characteristics

ADVANCE INFORMATION

1,000

1

E

ESIS

0.1

MAL

0.01

SIE

r(t),

0.001

0.000001 0.0001 0.01 1 100 10,000

D = 0.9
D = 0.7

D = 0.5
D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

t1, PULSE DURATION TIME (sec)

Fig. 1 Transi ent Thermal Resist ance

0.5

MMBT3906LP

R (t) = r(t) * R



JA JA

R = 272°C/W



JA

Duty Cycle, D = t1/ t2

(W)

100

IWE

Single Pulse



R = 272C/W



JA

R = r * R



JA(t) (t) JA

T - T = P * R

JA JA(t)



0.4

(W)

0.3

10

ANSIEN

EAK

1

(PK)

0.1
1E-06 0.0001 0.01 1 100 10,000

t1, PULSE DURATION TIME (sec)

Fig. 2 Single Pulse Maximum Power Dissipation

ISSI

0.2

D

R = 272 C/W

0.1

0

0 50 100 150 200





JA

T , AMBIENT TEMPERATURE (°C)

A

Fig. 3 Power Dissip ation vs . Ambi en t Temperature

MMBT3906LP

Document number: DS31836 Rev. 6 - 2

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February 2013

© Diodes Incorporated

)

)

r

C

O

CTO

R

C

U

R

RENT

C C

URR

N

T GAIN

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage

Collector Cutoff Current
Base Cutoff Current

ON CHARACTERISTICS (Note 8)

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Input Capacitance

ADVANCE INFORMATION

Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance

Current Gain-Bandwidth Product

SWITCHING CHARACTERISTICS

Delay Time
Rise Time
Storage Time
Fall Time

Note: 8. Short duration pulse test used to minimize self-heating effect.

0.20

I = -1.8mA

B

(A)

0.16

I = -1.4mA

I = -1.2mA

B

I = -1.6mA

B

B

0.12

0.08

LLE

C

0.04

-I ,

I = -2mA

B

I = -1mA

B

I = -0.8mA

B

I = -0.6mA

B

I = -0.4mA

B

I = -0.2mA

B

BV
BV
BV

I
I

V

CE(sat)

V

BE(sat)

C
C

CBO
CEO

EBO
CEX
CBO

I

BL

h

FE

obo

ibo

h
h
h
h

oe

f

T

t

d

t
t
t

-40

-40

-6.0





60
80

100 300

60
30





-0.65 -0.85






2.0 12 kΩ

ie
re
fe

s
f

0.1 10 x 10

100 400

3.0 60 µS

300






E

h, D





-50 nA

-50 nA

-50 nA


 I

 I
 I

-0.25

-0.40

-0.95

4.5 pF
10 pF



35 ns
35 ns

225 ns

75 ns

400

350

T = 150°C

A

300

T = 125°C

A

250

T = 85°C

A

200

T = 25°C

A

150

FE

100

T = -55°C

A

50

MMBT3906LP

V

IC = -100µA, IE = 0

V

IC = -10.0mA, IB = 0

V

IE = -100µA, IC = 0
V

= -30V, V

CE

V

= -30V, IE = 0

CB

V

= -30V, V

CE

I

= -100µA, V

C

= -1.0mA, VCE = -1.0V

C

I

= -10mA, VCE = -1.0V

C





MHz

= -50mA, V

C

= -100mA, VCE = -1.0V

C

= -10mA, IB = -1.0mA

I

C

V

IC = -50mA, IB = -5.0mA

= -10mA, IB = -1.0mA

I

C

V

IC = -50mA, IB = -5.0mA

VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0

-4

V

= 10V, IC = 1.0mA,

CE

f = 1.0kHz

= -20V, IC = -10mA,

V

CE

f = 100MHz

V

= -3.0V, IC = -10mA,

CC

= 0.5V, IB1 = -1.0mA

V

BE(off)

V

= -3.0V, IC = -10mA,

CC

= IB2 = -1.0mA

I

B1

EB(OFF

EB(OFF

= -1.0V

CE

= -1.0V

CE

= -3.0V

= -3.0V

V = 1V

CE

0

01 2 3 45

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 4 Typical Collector Current

vs. Collecto r -Em i t te r Voltage

0

110100

-I , COLLECTOR CURRENT (mA)

Fig. 5 Typical DC Current Gain vs. Collector Current

C

MMBT3906LP

Document number: DS31836 Rev. 6 - 2

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February 2013

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C

O

CTO

R

T

TER

C

O

CTO

R

T

T

R

2

T

TER TUR

N-O

N VOLT

G

2

T

TER

TURATIO

N VOLTAG

MMBT3906LP

1

I/I = 10

CB

1

I/I = 20

CB

E

-EMI

VOLTAGE (V)

0.1

LLE

SATURATION

CE(SAT)

-V ,

0.01
1 10 100 1,000

Fig. 6 Typical Collector-Emitter Saturation Voltage

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

-I , COLLECTOR CURRENT (mA)

C

vs. Collector Current

1.

E (V)
A

1.0

Gain = 10

-EMI

T = 150°C

LLE

CE(SAT)

VOLTAGE (V)

0.1

SATURATION

T = 125°C

A

T = -55°C

A

T = 85°C

A

T = 25°C

A

A

-V ,

0.01

0.1 1 10 100 1,000

-I , COLLECTOR CURRENT (mA)

Fig. 7 Typical Collector-Emitter Saturation Voltage

C

vs. Collector Current

1.

E (V)

Gain = 10

1.0

ADVANCE INFORMATION

0.8

0.6

0.4

BE(ON)

0.2

-V , BASE-EMI

0.1 1 10 100 1,000

T = -55°C

A

T = 25°C

A

T = 150°C

A

T = 125°C

T = 85°C

A

-I , COLLECTOR CURRENT (mA)

C

A

Fig. 8 Typical Base-Emitter Saturation Voltage

vs. Collector Current

0.8

SA

0.6

0.4

0.2

0.1 1 10 100 1,000

BE(SAT)

-V , BASE-EMI

T = -55°C

A

T = 25°C

A

T = 150°C

A

T = 125°C

T = 85°C

A

-I , COLLECTOR CURRENT (mA)

C

A

Fig. 9 Typical Base-Emitter Saturation Voltage

vs. Collector Current

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

A1

D

b2

E

b1

e

MMBT3906LP

Document number: DS31836 Rev. 6 - 2

L2

L1L3

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X1-DFN1006-3

Dim Min Max Typ

A 0.47 0.53 0.50
A1 0 0.05 0.03
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50

D 0.95 1.075 1.00

E 0.55 0.675 0.60

e

 

0.35

L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3

 

0.40

All Dimensions in mm

February 2013

© Diodes Incorporated

MMBT3906LP

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

ADVANCE INFORMATION

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the
final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

X

1

G2

X

C

G1

Y

Z

IMPORTANT NOTICE

LIFE SUPPORT

Dimensions Value (in mm)

Z 1.1
G1 0.3
G2 0.2

X 0.7
X1 0.25

Y 0.4

C 0.7

MMBT3906LP

Document number: DS31836 Rev. 6 - 2

6 of 6

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February 2013

© Diodes Incorporated