Diodes MMBT3904T User Manual

Features

• Epitaxial Planar Die Construction

• Complementary PNP Type Available (MMBT3906T)

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 2)

• "Green" Device (Note 3 and 4)

Mechanical Data

• Case: SOT-523

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe).

• Terminal Connections: See Diagram

• Marking Information: 1N, See Page 3

• Ordering & Date Code Information: See Page 3

• Weight: 0.002 grams (approximate)

MMBT3904T

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

A

C

TOP VIEW

B

G

H

K

J

D

C

B

E

C

B

SOT-523

Dim Min Max Typ

A 0.15 0.30 0.22

B 0.75 0.85 0.80

E

C 1.45 1.75 1.60

D

⎯ ⎯

0.50

G 0.90 1.10 1.00

N

M

H 1.50 1.70 1.60

J 0.00 0.10 0.05

L

K 0.60 0.80 0.75

L 0.10 0.30 0.22

M 0.10 0.20 0.12

N 0.45 0.65 0.50

0° 8°

α

All Dimensi mm ons in

⎯

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous

Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS30270 Rev. 8 - 2

www.diodes.com

1 of 4

V

V

V

R

Tj, T

CBO

CEO

EBO

IC

Pd

JA

θ

STG

60 V

40 V

6.0 V

200 mA

150 mW

833 °C/W

-55 to +150

°C

MMBT3904T

© Diodes Incorporated

P

P

O

R

P

TIO

C

N

P

U

T CAPACIT

N

C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Base Cutoff Current

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CEX

IBL

ON CHARACTERISTICS (Note 5)

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

hFE

V

CE(SAT)

V

BE(SAT)

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Input Capacitance

Input Impedance

Voltage Feedback Ratio

Small Signal Current Gain

Output Admittance

Current Gain-Bandwidth Product

C

C

hie

hre

hfe

hoe

obo

ibo

fT

Noise Figure NF

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effect.

td

tr

ts

tf

250

60

40

6.0

⎯

⎯

40
70

100

60
30

⎯

0.65

⎯

⎯

⎯

1.0 10

0.5 8.0 x 10-4

100 400

1.0 40

300

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

V

V

V

50 nA

50 nA

⎯
⎯

300

⎯

⎯

⎯

0.20

0.30

0.85

0.95

V

V

4.0 pF

8.0 pF

kΩ

⎯

μS

⎯

MHz

5.0 dB

35 ns

35 ns

200 ns

50 ns

15

IC = 10μA, IE = 0

IC = 1.0mA, IB = 0

IE = 10μA, IC = 0

V

= 30V, V

CE

V

= 30V, V

CE

IC = 100µA, V

EB(OFF)

EB(OFF)

= 1.0V

CE

= 3.0V

= 3.0V

IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, V

CE

= 1.0V

IC = 100mA, VCE = 1.0V

IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA

IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA

VCB = 5.0V, f = 1.0MHz, IE = 0

VEB = 0.5V, f = 1.0MHz, IC = 0

V

= 10V, IC = 1.0mA,

CE

f = 1.0kHz

VCE = 20V, IC = 10mA,
f = 100MHz

= 5.0Vdc, IC = 100μAdc,

V

CE

= 1.0KΩ, f = 1.0MHz

R

S

VCC = 3.0V, IC = 10mA,
V

= - 0.5V, IB1 = 1.0mA

BE(off)

VCC = 3.0V, IC = 10mA

IB1 = IB2 = 1.0mA

200

N (mW)

150

A

E (pF)

10

A

DISSI

100

WE

,

d

50

0

0100200

T , AMBIENT TEMPERATURE (°C)

A

Fig. 1, Power Derating Curve

DS30270 Rev. 8 - 2

2 of 4

www.diodes.com

5

, I

IBO

OBO

C , OUTPUT CAPACITANCE (pF)

0

0.1
V , COLLECTOR-BASE VOLTAGE (V)

CB

1

10

100

Fig. 2, Input and Output Capacitance vs.

Collector-Base Voltage

© Diodes Incorporated

MMBT3904T