Diodes MMBT3904LP User Manual
Features
• Complementary PNP Type Available (MMBT3906LP)
• Ultra-Small Leadless Surface Mount Package
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
X1-DFN1006-3
Bottom View
B
Device Symbol
MMBT3904LP
40V NPN SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: X1-DFN1006-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.0008 grams (approximate)
C
B
C
E
E
Top View
Device Schematic
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
MMBT3904LP-7 1N 7 8mm 3,000
MMBT3904LP-7B 1N 7 8mm 10,000
Notes: 1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
MMBT3904LP
Document number: DS31835 Rev. 4 - 2
MMBT3904LP-7 MMBT3904LP-7B
1N1N
Top View
Dot Denotes
Collector Side
Top View
Bar Denotes Base
and Emitter Side
1 of 5
www.diodes.com
1N = Product Type Marking Code
October 2011
© Diodes Incorporated
θ
T
R
T T
HER
R
TANC
P
P
T
R
T
P
OWER
P
P
O
R
P
TIO
N
MMBT3904LP
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 4)
V
CBO
V
CEO
V
EBO
I
C
60 V
40 V
6.0 V
200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage and Temperature Range
Notes: 4. Device mounted on FR-4 PCB pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com
P
D
R
JA
, T
T
J
STG
1
D = 0.9
E
D = 0.7
D = 0.5
D = 0.3
ESIS
0.1
250 mW
500
-55 to +150
°C/W
°C
1,000
(W)
100
ANSIEN
EAK
(pk),
10
MAL
0.01
ANSIEN
r(t),
0.001
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R (t) = r(t) *
θ
JA
R = 500°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
1E-06 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
t , PULSE DURATION TIME (s)
1
Fig. 1 Transient Thermal Response
0.4
Single Pulse
R (t) = r(t) *
θ
JA
R = 500°C/W
T - T = P * R (t)
JA JA
R
JA
θθJA
θ
0.3
(W)
A
Note 4
0.2
DISSI
WE
0.1
1
,
D
0.1
1E-06 0.0001 0.01 1 100 10,000
t , PULSE DURATION TIME (s)
1
Fig. 2 Single Pulse Maximum Power Dissipation
MMBT3904LP
Document number: DS31835 Rev. 4 - 2
2 of 5
www.diodes.com
0
0 20 40 60 80 100 120 140 160
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 3 Pow er Dissipat io n vs. A m bi ent Tem perature
October 2011
© Diodes Incorporated
Loading...