Diodes MMBT3904 User Manual

C
Features
Epitaxial Planar Die Construction  Complementary PNP Type Available (MMBT3906)  Ideal for Medium Power Amplification and Switching  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP capable (Note 4)
SOT23
B
Top View
Mechanical Data
Case: SOT23 Case Material: molded plastic, “Green” molding compound
Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – Matte Tin Plated Leads, Solderable per
Weight: 0.008 grams (approximate)
E
Device Symbol
40V NPN SMALL SIGNAL TRANSISTOR IN SOT23
UL Flammability Classification Rating 94V-0
MIL-STD-202, Method 208
Top View
Pin-Out
Ordering Information
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
MMBT3904-7-F AEC-Q101 K1N 7 8 3,000
MMBT3904Q-7-F Automotive K1N 7 8 3,000
MMBT3904-13-F AEC-Q101 K1N 13 8 10.000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
(Notes 4 & 5)
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul
Code 1 2 3 4 5 6 7
K1N = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: A = 2013) M or M = Month (ex: 9 = September)
Aug Sep Oct Nov Dec
8 9 O N D
MMBT3904
Document number: DS30036 Rev. 21 - 2
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MMBT3904
Absolute Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current
V
CBO
V
CEO
V
EBO
I
C
60 V 40 V
6 V
200 mA
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation
Thermal Resistance, Junction to Ambient
(Note 6) (Note 7) 350 (Note 6)
(Note 7) 357 Thermal Resistance, Junction to Leads (Note 8) Operating and Storage Temperature Range
P
R
R
T
J,TSTG
D
θJA
θJL
310
403
350
-55 to +150
mW
C/W
C/W
C
ESD Ratings (Note 9)
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted on 15 mm x 15mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the leads).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Characteristic Symbol Value Unit JEDEC Class
MMBT3904
Document number: DS30036 Rev. 21 - 2
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November 2013
© Diodes Incorporated
C
O
CTO
R CUR
REN
T
A
Thermal Characteristics and Derating Information
0.4
0.3
0.2
0.1
0.0 0 255075100125150
Max Power Dissipation (W)
Temperature (°C)
Thermal Resistance (°C/W)
Derating Curve
10
Single Pulse. T
1
amb
=25°C
MMBT3904
400
350
300
250
D=0.5
200
150
D=0.2
100
50
0
100µ 1m 10m 100m 1 10 100 1k
D=0.1
Single Pulse
D=0.05
Pulse Width (s)
Transient Thermal Impedance
1
) (
0.1
Pw = 10ms
0.1
10m 100m 1 10 100 1k
Max Power Dissipation (W)
Pulse Width (s)
LLE
I,
Pulse Power Dissipation
0.001
DC
Pw = 100ms
0.01
C
T = 25°C
A
Single Non-repetitive Pulse DUT mounted onto 1xMRP FR-4 board
0.1 1 10 100 V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 5 Typical Collector Current
vs. Collector-Emitter Voltage
MMBT3904
Document number: DS30036 Rev. 21 - 2
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© Diodes Incorporated
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