Diodes MMBT2907AT User Manual
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (MMBT2222AT)
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Terminal Connections: See Diagram
• Marking Information: 2F, See Page 4
• Ordering & Date Code Information: See Page 4
• Weight: 0.002 grams (approximate)
MMBT2907AT
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
A
C
TOP VIEW
B
K
J
E
G
H
D
C
B
E
C
B
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D
⎯ ⎯
0.50
G 0.90 1.10 1.00
N
M
H 1.50 1.70 1.60
J 0.00 0.10 0.05
L
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
0° 8°
α
All Dimensi mm ons in
⎯
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
DS30269 Rev. 8 - 2
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1 of 4
V
V
V
R
Tj, T
CBO
CEO
EBO
IC
Pd
JA
θ
STG
-60 V
-60 V
-5.0 V
-600 mA
150 mW
833 °C/W
-55 to +150
°C
MMBT2907AT
© Diodes Incorporated
P, P
O
R
PATIO
N
C, C
P
C
TANC
pF)
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
200
Note 1
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
IBL
hFE
V
CE(SAT)
V
BE(SAT)
C
C
t
t
⎯
⎯
⎯
obo
ibo
fT
off
td
tr
off
ts
tf
-60
-60
-5.0
⎯
⎯
⎯
-10
⎯
⎯
75
100
100
100
50
-50 nA
-50 nA
⎯
⎯
⎯
300
⎯
-0.4
-1.6
-1.3
-2.6
⎯
8.0 pF
— 30 pF
200
⎯
⎯
⎯
⎯
⎯
⎯
100 ns
MHz
⎯
45 ns
10 ns
40 ns
80 ns
30 ns
V
IC = -10μA, IE = 0
V
IC = -10mA, IB = 0
V
IE = -10μA, IC = 0
nA
VCB = -50V, IE = 0
μA
VCB = -50V, IE = 0, TA = 125°C
V
= -30V, V
CE
V
= -30V, V
CE
IC = -100µA, V
EB(OFF)
EB(OFF)
CE
IC = -1.0mA, VCE = -10V
⎯
IC = -10mA, VCE = -10V
IC = -150mA, V
CE
IC = -500mA, VCE = -10V
IC = -150mA, IB = -15mA
V
IC = -500mA, IB = -50mA
IC = 150mA, IB = 15mA
V
IC = 500mA, IB = 50mA
VCB = -10V, f = 1.0MHz, IE = 0
VEB = -2.0V, f = 1.0MHz, IC = 0
VCE = -20V, IC = -50mA,
f = 100MHz
VCC = -30V, IC = -150mA,
IB1 = -15mA
VCC = -6.0V, IC = -150mA,
IB1 = IB2 = -15mA
= -0.5V
= -0.5V
= -10V
= -10V
f = 1MHz
150
(mW)
E (
100
DISSI
WE
50
d
0
0 40 80 120 160 200
T , AMBIENT TEMPERATURE (ºC)
A
Fig. 1, Power Derating Curve, Total Package
I
Cibo
A
A
T
V , REVERSE VOLTAGE (V)
R
Fig. 2, Typical Capacitance Characteristics
Cobo
DS30269 Rev. 8 - 2
2 of 4
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MMBT2907AT
© Diodes Incorporated
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