Diodes MMBT2222AT User Manual

Features

• Epitaxial Planar Die Construction

• Complementary PNP Type Available (MMBT2907AT)

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 2)

• "Green" Device (Note 3 and 4)

Mechanical Data

• Case: SOT-523

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe).

• Terminal Connections: See Diagram

• Marking Information: 1P, See Page 4

• Ordering & Date Code Information: See Page 4

• Weight: 0.002 grams (approximate)

MMBT2222AT

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

A

C

TOP VIEW

B

K

J

E

G

H

D

C

B

E

C

B

SOT-523

Dim Min Max Typ

A 0.15 0.30 0.22

B 0.75 0.85 0.80

C 1.45 1.75 1.60

D

⎯ ⎯

0.50

G 0.90 1.10 1.00

N

L

M

H 1.50 1.70 1.60

J 0.00 0.10 0.05

K 0.60 0.80 0.75

L 0.10 0.30 0.22

M 0.10 0.20 0.12

N 0.45 0.65 0.50

0° 8°

α

All Dimensi mm ons in

⎯

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous

Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS30268 Rev. 10 - 2

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1 of 4

V

V

V

R

Tj, T

CBO

CEO

EBO

IC

Pd

JA

θ

STG

75 V

40 V

6.0 V

600 mA

150 mW

833 °C/W

-55 to +150

°C

MMBT2222AT

© Diodes Incorporated

C

C

U

R

R

N

T

GAIN

P, P

O

R

PAT

O

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Base Cutoff Current

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CEX

IBL

ON CHARACTERISTICS (Note 5)

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

hFE

V

CE(SAT)

V

BE(SAT)

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Input Capacitance

Current Gain-Bandwidth Product

Input Impedance

Voltage Feedback Ratio

Small-Signal Current Gain

Output Admittance

C

C

hie

hre

hfe

hoe

obo

ibo

fT

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effect.

td

tr

ts

tf

250

75

40

6.0

⎯

⎯

35
50
75

100

40

⎯

0.6

⎯

⎯

— 30 pF

300

0.25 1.25

⎯

75 375

25 200

⎯

⎯

⎯

⎯

⎯

⎯

⎯

10 nA

20 nA

⎯
⎯
⎯

300

⎯

0.3

1.0

1.2

2.0

8 pF

⎯

4.0 X 10

10 ns

25 ns

225 ns

60 ns

1,000

V

IC = 10μA, IE = 0

V

IC = 10mA, IB = 0

V

IE = 10μA, IC = 0

V

= 60V, V

CE

V

= 60V, V

CE

IC = 100μA, V

EB(OFF)

EB(OFF)

= 10V

CE

= 3.0V

= 3.0V

IC = 1.0mA, VCE = 10V

⎯

IC = 10mA, VCE = 10V
IC = 150mA, V

CE

= 10V

IC = 500mA, VCE = 10V

IC = 150mA, IB = 15mA

V

IC = 500mA, IB = 50mA

IC = 150mA, IB = 15mA

V

IC = 500mA, IB = 50mA

VCB = 10V, f = 1.0MHz, IE = 0

VEB = 0.5V, f = 1.0MHz, IC = 0

VCE = 20V, IC = 20mA,

MHz

f = 100MHz

kΩ

VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz

-4

= 10 Vdc, IC = 10 mAdc, f = 1.0kHz

V

CE

⎯

VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz

μS

VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz

VCC = 30V, IC = 150mA,
V

= - 0.5V, IB1 = 15mA

BE(off)

VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA

200

N (mW)
I

DISSI

WE

d

150

100

50

0

0

40

T , AMBIENT TEMPERATURE (°C)

A

80 120 160 200

Fig. 1 Power Derating Curve

100

E

FE

h, D

10

1

0.1

T = 125°C

A

T = +25°C

T = -25°C

A

I , COLLECTOR CURRENT (mA)

A

1

C

10

Fig. 2 Typical DC Current Gain vs.

Collector Current

V = 1.0V

100

CE

1,000

DS30268 Rev. 10 - 2

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MMBT2222AT

© Diodes Incorporated