Diodes MMBT2222ALP4 User Manual
Features
• Low Collector-Emitter Saturation Voltage, V
• Ultra-Small Leadless Surface Mount Package
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
X2-DFN1006-3
Bottom View
CE(sat)
B
MMBT2222ALP4
40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: X2-DFN1006-3
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
• Weight: 0.0009 grams (Approximate)
C
E
Device Symbol
per MIL-STD-202, Method 208
B
E
Top View
Device Schematic
e4
C
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
MMBT2222ALP4-7B 2S 7 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
2S
Top View
2S = Product Type Marking Code
Bar Denotes Base and Emitter Side
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2
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August 2012
© Diodes Incorporated
θ
θ
θ
MMBT2222ALP4
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Collector Current
V
CBO
V
CEO
V
EBO
I
C
I
CM
75 V
40 V
6 V
600 mA
800 mA
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Lead (Note 7)
Operating and Storage Temperature Range
P
D
P
D
R
JA
R
JA
R
JL
, T
T
J
STG
460 mW
1 W
272
120
110
-55 to +150
°C/W
°C/W
°C/W
°C
ESD Ratings (Note 8)
Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as note 5, except device is surface mounted on 25mm X 25mm collector pad heatsink with 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Characteristic Symbol Value Unit JEDEC Class
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2
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August 2012
© Diodes Incorporated
T
R
T T
HER
R
T
C
P
P
T
R
T P
O
R
P, P
OWER
PATIO
N
Thermal Characteristics
1,000
1
D = 0.9
D = 0.7
E
D = 0.5
AN
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
D = Single Pulse
0.001
0.000001 0.0001 0.01 1 100 10,000
t1, PULSE DURATION TIME (sec)
Figure 1 Transient Th er m al Resistance
0.5
MMBT2222ALP4
R (t) = r(t) * R
θθ
JA JA
R = 272°C/W
θ
JA
Duty Cycle, D = t1/ t2
(W)
100
IWE
Single Pulse
°
R = 272C/W
θ
JA
R = r * R
θθ
JA(t) (t) JA
T - T = P * R
JA JA(t)
θ
0.4
(W)
0.3
10
ANSIEN
EAK
1
,
(PK)
0.1
1E-06 0.0001 0.01 1 100 10,000
t1, PULSE DURATION TIME (sec)
Figure 2 Single Pulse Maximum Power Dissipation
DISSI
0.2
D
R = 272 C/W
0.1
0
0 50 100 150 200
°
θ
JA
T , AMBIENT TEMPERATURE (°C)
A
Figure 3 Power Dis sipation vs. A mbient Temperature
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2
3 of 7
www.diodes.com
August 2012
© Diodes Incorporated
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