Diodes MMBT2222A User Manual

E

B

C

MMBT2222A

40V NPN SMALL SIGNAL TRANSISTOR IN SOT23

Features

• Epitaxial Planar Die Construction

• Complementary PNP Type: MMBT2907A

• Ideal for Low Power Amplification and Switching

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP capable (Note 4)

Ordering Information

Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel

MMBT2222A-7-F AEC-Q101 K1P 7 8 3,000

MMBT2222A-13-F AEC-Q101 K1P 13 8 10,000

MMBT2222AQ-7-F Automotive K1P 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

SOT23

B

Top View

(Notes 4 & 5)

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding Compound

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Leads; Solderable per MIL-STD-

• Weight: 0.008 grams (approximate)

E

Device Symbol

UL Flammability Classification Rating 94V-0

202, Method 208

C

Top View

Pin-Out

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016 2017

Code X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

MMBT2222A

Document number: DS30041 Rev. 14 - 2

K1P

www.diodes.com

YM

1 of 7

K1P = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M or M = Month (ex: 9 = September)

January 2014

© Diodes Incorporated

Absolute Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Peak Collector Current

Peak Base Current

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Collector Power Dissipation

Thermal Resistance, Junction to Ambient

(Note 6)

(Note 7) 350

(Note 6)

(Note 7) 357

Thermal Resistance, Junction to Leads (Note 8)

Operating and Storage Temperature Range

ESD Ratings (Note 9)

V

V

V

I

I

T

CBO

CEO

EBO

I

C

CM

BM

P

D

R

θJA

R

θJL

J,TSTG

MMBT2222A

75 V

40 V

6.0 V

600 mA

800 mA

200 mA

310

403

mW

°C/W

350 °C/W

-55 to +150 °C

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A

Electrostatic Discharge - Machine Model ESD MM 400 V C

Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air

conditions whilst operating in a steady-state.

7. Same as note (6), except the device is mounted on 15 mm x 15mm 1oz copper.

8. Thermal resistance from junction to solder-point (at the end of the leads).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

MMBT2222A

Document number: DS30041 Rev. 14 - 2

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Thermal Characteristics and Derating Information

0.4

0.3

0.2

0.1

0.0
0 25 50 75 100 125 150

Max Power Dissipation (W)

Temperature (°C)

Thermal Resistance (°C/W)

Derating Curve

10

Single Pulse. T

amb

=25°C

MMBT2222A

400

350

300

250

D=0.5

200

150

D=0.2

100

50

0

100µ 1m 10m 100m 1 10 100 1k

D=0.1

Single Pulse

D=0.05

Pulse Width (s)

Transient Thermal Impedance

1

0.1

10m 100m 1 10 100 1k

Max Power Dissipation (W)

Pulse Width (s)

Pulse Power Dissipation

MMBT2222A

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Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage (Note 10)

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Collector Cutoff Current

Collector Cutoff Current

Emitter Cutoff Current

Base Cutoff Current

BV

CBO

BV

CEO

BV

EBO

I

⎯

CBO

I

CEX

I

CEV

I

⎯

EBO

IBL ⎯

75

40

6.0

⎯

⎯

ON CHARACTERISTICS (Note 10)

35
50
75

DC Current Gain

hFE

100

40
50
35

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V

CE(sat)

V

BE(sat)

⎯

0.6
⎯

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Input Capacitance

Current Gain-Bandwidth Product

Noise Figure NF

C

⎯

obo

C

ibo

fT

— 25 pF

300

⎯

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

td ⎯

tr ⎯

ts ⎯

tf

⎯

MMBT2222A

Document number: DS30041 Rev. 14 - 2

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⎯

⎯

⎯

10

V

V

V

nA
µA

10 nA

10 nA

10 nA

20 nA

⎯
⎯
⎯

300

⎯
⎯
⎯
⎯

0.3

1.0

1.2

2.0

V

V

8 pF

⎯

MHz

4.0 dB

10 ns

25 ns

225 ns

60 ns

MMBT2222A

IC = 100µA, IE = 0

IC = 10mA, IB = 0

IE = 100µA, IC = 0

VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = +150°C

V

= 60V, V

CE

V

= 60V, VBE = ±0.25V

CE

V

= 5.0V, IC = 0

EB

V

= 60V, V

CE

IC = 100µA, V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V

IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA

IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA

VCB = 10V, f = 1.0MHz, IE = 0

VEB = 0.5V, f = 1.0MHz, IC = 0

VCE = 20V, IC = 20mA,
f = 100MHz

V

= 10V, IC = 100µA,

CE

RS = 1.0kΩ, f = 1.0kHz

VCC = 30V, IC = 150mA,
V

= - 0.5V, IB1 = 15mA

BE(OFF)

VCC = 3.0V, IC = 150mA, IB1 = 15mA,
V

= 0.5V

BE(OFF)

VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA

VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA

EB(OFF)

EB(OFF)

= 10V

CE

= 10V

CE

= 3.0V

= 3.0V

© Diodes Incorporated

January 2014

C CUR

RENT G

C

O

C

TOR

T

T

R

T

TER TURN-O

OLTAG

5

G

T

H

PRODU

C

T

H

C

O

CTO

R

T

T

R VOLT

G

MMBT2222A

1,000

AIN

100

T = -25°C

A

T = 125°C

A

T = 25°C

A

E

-EMI

LLE

0.5

0.4

0.3

0.2

I

C

= 10

I

B

T = 25°C

A

T = 150°C

A

10

FE

h, D

V = 1.0V

CE

1

0.1

1

I , COLLECTOR CURRENT (mA)

C

10

100

Figure 1 Typical DC Current Gain vs. Collector Current

1.0

E (V)

0.9

0.8

V = 5V

CE

T = -50°C

A

N V

0.7

T = 25°C

A

0.6

0.5

T = 150°C

A

0.4

0.3

BE(ON)

0.2

V , BASE-EMI

10.1 10

I , COLLECTOR CURRENT (mA)

C

Figure 3 Base-Emitter Turn-On Voltage

vs. Collector Current

1,000

V = 5V

z)

CE

(M

100

1,000

100

SATURATION VOLTAGE (V)

0.1

CE(SAT)

V,

0

1

10

I , COLLECTOR CURRENT (mA)

C

100

Figure 2 Typical Collector-Emitter Sat uration Voltage

vs. Collector Current

3

30

25

20

C

15

CAPACITANCE (pF)

10

ibo

5

0

0

24

8

6

V , REVERSE VOLTS (V)

R

10

12

14 16 18 20

Figure 4 Typical Capacitance Characteristics

2.0

I = 30mA

I = 10mA

C

C

I = 100mA

C

1.8

I = 1mA

E (V)

1.6

A

C

1.4

I = 300mA

E

1.2

C

T = -50°C

f = 1MHz

C

A

1,000

obo

1.0

-EMI

0.8

10

AIN BANDWID

T

f,

1

110100

I , COLLECTOR CURRENT (mA)

C

Figure 5 Typical Gain Bandwidth Product

vs. Collector Current

MMBT2222A

Document number: DS30041 Rev. 14 - 2

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0.6

LLE

0.4

CE

0.2

V,

0

0.001 0.01

0.1

I , BASE CURRENT (mA)

B

1

10

Figure 6 Typical Collector Saturation Region

© Diodes Incorporated

100

January 2014

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

H

K

K

1

A

All 7

°

J

M

L

a

L

1

C

B

D

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y

Z

C

Dimensions Value (in mm)

Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35

X

E

MMBT2222A

Dim Min Max Typ

A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915

F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90

J 0.013 0.10 0.05
K 0.890 1.00 0.975

K1 0.903 1.10 1.025

L 0.45 0.61 0.55

L1 0.25 0.55 0.40

M 0.085 0.150 0.110

a

SOT23

8°

All Dimensions in mm

MMBT2222A

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2014, Diodes Incorporated

www.diodes.com

MMBT2222A

MMBT2222A

Document number: DS30041 Rev. 14 - 2

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