Diodes MMBT123S User Manual

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MMBT123S

1A NPN SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ideal for Medium Power Amplification and Switching

• Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 2 and 4)

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe).

• Terminal Connections: See Diagram

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.008 grams (approximate)

Maximum Ratings @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range

= 25°C unless otherwise specified

A

A

C

TOP VIEW

B

E

E

D

G
H

C

B

V

CBO

V

CEO

V

EBO

IC

PD

R

JA

θ

TJ, T

STG

B

C

SOT-23

Dim Min Max

A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03

K

J

L

M

E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α

E

All Dimensions in mm

0° 8°

45 V
18 V

5 V

1 A
300 mW
417

-55 to +150

°C/W

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 3)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current

ON CHARACTERISTICS (Note 3)

DC Current Gain
Collector-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Current Gain-Bandwidth Product

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead. Halogen and Antimony Free.

3. Short duration pulse test used to minimize self-heating effect.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code

V9 are built with Non-Green Molding Compound and may contain Halogens or Sb

DS30292 Rev. 7 - 2 1 of 3

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

hFE

V

CE(SAT)

C

fT

obo

45
18

5

⎯
⎯

150 800

⎯

⎯

100

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⎯
⎯
⎯

1
1

0.5 V

8 pF

⎯

Fire Retardants.

2O3

V

IC = 100μA, IE = 0

V

IC = 1mA, IB = 0

V

IE = 100μA, IC = 0

μA

VCB = 40V, IE = 0

μA

V

= 4V, IC = 0

EB

⎯

IC = 100mA, V
IC = 300mA, IB = 30mA

VCB = 10V, f = 1.0MHz, IE = 0
VCB = 10V, IE = 50mA,

MHz

f = 100MHz

CE

= 1V

MMBT123S

© Diodes Incorporated

P, P

OWER

P

T

O

C C

URREN

T

G

N

C, OUTPU

T CAPACITAN

C

F

C

O

CTO

R

T

TER

400

Note 1

350

300
N (mW)
I

250
A

1000

AI

DISSI

D

)
E (p

100

200

150

100

50

10

100

FE

h, D

V = 1.0V

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75 100 125

150

175

200

Fig. 1, Max Power Dissipation vs

Ambie nt Temperature

1

0.0001

0.001
I , COLLECTOR CURRENT (A)

C

0.01

0.1

Fig. 2, Typical DC Current Gain vs

Collector Current

CE

1

10

1000

f = 1MHz

-EMI

100

LLE

10

CE (SAT)

OBO

1

CB

1

10

100

0.1
V , COLLECTOR-BASE VOLTAGE (V)

Fig. 3, Output Capacitance vs.

Collector-Base Voltage

SATURATION VOLTAG E (mV )

V,

1

0.0001 0.001 0.01 0.1 1
I , COLLECTOR CURRENT (A)

C

Fig. 4, Collector Saturation V oltage vs

Collector Current

10

DS30292 Rev. 7 - 2 2 of 3

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MMBT123S

© Diodes Incorporated