Diodes MMBF170 User Manual

p

Features

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

SOT23

Top View



G

Equivalent Circuit

MMBF170

N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.008 grams (approximate)

D

D

S

G

To

S

View

Ordering Information

Part Number Case Packaging

MMBF170-7-F SOT23 3000/Tape & Reel

MMBF170-13-F SOT23 10000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

(Note 4)

Marking Information

Date Code Key

Year 1998 1999 2000 2001 2002 2003 2004 … 2011 2012 2013 2014 2015 2016 2017

Code J K L M N P R … Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

MMBF170

Document number: DS30104 Rev. 14 - 2

Shanghai A/T SiteChengdu A/T Site

1 of 5

www.diodes.com

K6Z = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2014)
M = Month (ex: 9 = September)

May 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Drain-Gate Voltage RGS  1.0MΩ V

Gate-Source Voltage Continuous
Pulsed

Drain Current (Note 5) Continuous
Pulsed

V

DSS

DGR

V

GSS

I

D

60 V

60 V

20
40

500
800

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

P

D

R

θJA

T

, T

J

STG

300

1.80

417 K/W

-55 to +150 °C

MMBF170

V

mA

mW

mW/°C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

60 70

 

 

V



1.0 µA

nA

10

VGS = 0V, ID = 100μA

V

= 60V, VGS = 0V

DS

VGS = 15V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

V

GS(th)

R

DS (ON)

g

0.8 2.1 3.0 V

 

FS

80



 

5.0

5.3

VDS = VGS, ID = 250μA

= 10V, ID = 200mA

V

GS

Ω

V

= 4.5V, ID = 50mA

GS

mS

V

=10V, ID = 0.2A

DS

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

iss

C

oss

C

rss



22 40 pF



11 30 pF



2.0 5.0 pF

V

DS

= 10V, V

= 0V, f = 1.0MHz

GS

SWITCHING CHARACTERISTICS

Turn-On Time

Turn-Off Time

Notes: 5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our

website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

t

on

t

off

 

 

10 ns

10 ns

= 25V, ID = 0.5A,

V

DD

= 10V, R

V

GS

GEN

= 50Ω

MMBF170

Document number: DS30104 Rev. 14 - 2

2 of 5

www.diodes.com

May 2014

© Diodes Incorporated