DIODES MMBD4448HW Datasheet

Features

Fast Switching Speed

·

Surface Mount Package Ideally Suited for

·

Automatic Insertion
For General Purpose Switching Applications

·

High Conductance

·

Mechanical Data

Case: SOT-323, Molded Plastic

·

NEW PRODUCT

Terminals: Solderable per MIL-STD-202,

·

Method 208
Polarity: See Diagram

·

Marking: KA1

·

Weight: 0.006 grams (approx.)

·

E

MMBD4448HW

SURFACE MOUNT SWITCHING DIODE

SOT-323

Dim Min Max

TOP VIEW

G

H

A

B

C

D

K

J

L

A 0.30 0.40

B 1.15 1.35

C 2.00 2.20

D 0.65 Nominal

E 0.30 0.40

G 1.20 1.40

H 1.80 2.20

J 0.0 0.10

K 0.90 1.00

M

L 0.25 0.40

M 0.10 0.25

All Dimensions in mm

Maximum Ratings

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage

Forward Continuous Current (Note 1)

Average Rectified Output Current (Note 1)

Non-Repetitive Peak Forward Surge Current @ t = 1.0ms

Power Dissipation (Note 1)

Thermal Resistance Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

Electrical Characteristics

Reverse Breakdown Voltage (Note 2)

Forward Voltage (Note 2)

Peak Reverse Current (Note 2)

Junction Capacitance

Reverse Recovery Time

@ TA= 25°C unless otherwise specified

Characteristic Symbol MMBD4448H Unit

@ t = 1.0s

@ TA= 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

V

(BR)R

V

FM

I

RM

C

t

rr

j

V

RM

V

RRM

V

RWM

V

R

V

R(RMS)

I

FM

I

O

I

FSM

P

d

R

qJA

T

j,TSTG

80 ¾ VI

0.62

¾
¾
¾

¾

¾ 3.5 pF

¾ 4.0 ns

0.72

0.855

1.0

1.25

100

100 V

80

57 V

500 mA

250

4.0

2.0

200 mW

625 °C/W

-65 to +150 °C

50
30
25

nA

mA
mA

nA

V

mA

A

= 2.5mA

R

= 5.0mA

I

F

I

= 10mA

V

F

I

= 100mA

F

I

= 150mA

F

= 70V

V

R

= 75V, Tj= 150°C

V

R

= 25V, Tj= 150°C

V

R

V

= 20V

R

= 6V, f = 1.0MHz

V

R

= 6V, IF= 5mA

V

R

Notes: 1. Valid provided that terminals are kept at ambient temperature.

2. Short duration test pulse used to minimize self-heating effect.

DS30228 Rev. A-2 1 of 2 MMBD4448HW

1000

O

O

10,000

100

10

WARD CURRENT (mA)
R

1.0

NEW PRODUCT

US F

0.1

F

0.01

I , INSTANTANE

1000

100

10

R

I , LEAKAGE CURRENT (nA)

1

012

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

Fig. 1 Forward Characteristics

0 100 200

T , JUNCTION TEMPERATURE (°C)

Fig. 2 Leakage Current vs Junction Temperature

V = 20V

R

j

DS30228 Rev. A-2 2 of 2 MMBD4448HW